Patents by Inventor Shingo Muramoto

Shingo Muramoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same
    Patent number: 8872291
    Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.
    Type: Grant
    Filed: September 26, 2012
    Date of Patent: October 28, 2014
    Assignee: National Institute For Materials Science
    Inventors: Hiroaki Sukegawa, Seiji Mitani, Tomohiko Niizeki, Tadakatsu Ohkubo, Kouichiro Inomata, Kazuhiro Hono, Masafumi Shirai, Yoshio Miura, Kazutaka Abe, Shingo Muramoto