Abstract: Manufacturing equipment for a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed is provided. With the manufacturing equipment for a light-emitting device, a deposition step, a lithography step, and an etching step for forming an organic EL element and a sealing step by formation of a protective layer can be successively performed. Accordingly, a downscaled organic EL element with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.

Abstract: A high-resolution display device is provided.

Abstract: A high-resolution display apparatus having a function of sensing light is provided. A high-definition display apparatus having a function of sensing light is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a third light-emitting device, a first light-receiving device, and a second light-receiving device in a first pixel. The first light-emitting device has a function of emitting red light. The second light-emitting device has a function of emitting green light. The third light-emitting device has a function of emitting blue light. The first light-receiving device has a function of sensing light emitted from at least one of the three light-emitting devices. The second light-receiving device has a function of sensing infrared light.

Abstract: A display device with high display quality is provided. A highly reliable display device is provided. A display device with low power consumption is provided. A display device that can easily achieve higher resolution is provided. A display device with both high display quality and high resolution is provided. A display device with high contrast is provided. The display device includes a first conductive layer, a first insulating layer over the first conductive layer, a second conductive layer including a first region over the first insulating layer and a second region in an opening provided in the first insulating layer, a second insulating layer over the first insulating layer, a third insulating layer over the second region, an EL layer including a third region over the first region, a fourth region over the second insulating layer, and a fifth region over the third insulating layer, and a third conductive layer over the EL layer.

Abstract: A manufacturing process for a semiconductor device comprising the following steps: to spin-coat by Spin-on method a solution for forming a SOG film on a wafer having a device formed on the surface to form a coating of the SOG film forming solute thereon; to treat by a liquid which is able to dissolve the solute for forming SOG film at least a part of the wafer which is held by claws of a dry etching system at a later stage in the series of processes, thereby removing a coating of the SOG film forming solute at that part; and to then bake the wafer to complete a SOG film.