Abstract: An inorganic compound for a Li-ion conductor includes an oxyhalide compound with a chemical composition of MOX where M is at least one of Al, Sc, La, and Y, and X is at least one of F, Cl, Br, and I. Also, the oxyhalide compound has a thermal decomposition start temperature of the oxyhalide compound is greater than a thermal decomposition start temperature of FeOCl and a conductivity that is general equal to or greater than a conductivity of the FeOCl.

Abstract: An inorganic compound for a Li-ion conductor includes an oxyhalide compound with a chemical composition of MOX where M is at least one of Al, Sc, La, and Y, and X is at least one of F, Cl, Br, and I. Also, the oxyhalide compound has a thermal decomposition start temperature of the oxyhalide compound is greater than a thermal decomposition start temperature of FeOCl and a conductivity that is general equal to or greater than a conductivity of the FeOCl.

Abstract: A method of synthesizing an inorganic precursor for an ionic conductor includes mixing at least one oxide of M with at least one halide of M, heating the mixture of the at least one oxide of M and the at least one halide of M and forming an MOX inorganic oxyhalide compound, and injecting defects in the MOX inorganic oxyhalide compound and forming a defect doped (MOX)? precursor for an ionic conductor. The element or component M is selected from at least one of Fe, Al, La, and Y, the at least one halide of M is selected from at least one of a fluoride of M, a chloride of M, a bromide of M, and an iodide of M, and the element or component X is at least one of F, Cl, Br, and I.

Abstract: A method for manufacturing a semiconductor device includes a step of preparing a semiconductor substrate that has a first main surface on one side and a second main surface on the other side, the semiconductor substrate on which a plurality of device forming regions and an intended cutting line that demarcates the plurality of device forming regions are set, a step of forming a first electrode that covers the first main surface in each of the device forming regions, a step of forming a second electrode that covers the second main surface, a step of partially removing the second electrode along the intended cutting line such that the semiconductor substrate is exposed, and forming a removed portion that extends along the intended cutting line, and a step of cutting the semiconductor substrate along the removed portion.

Abstract: A lithium-ion conducting composite material includes a Li binary salt, a Li-ion conductor with a chemical composition of Li2?3x+y?zFexOy(OH)1?yCl1?z, and at least two of: a first inorganic compound with a chemical composition of (Fe1?xM1x)O1?y(OH)yCl1?x; a second inorganic compound with a chemical composition of M2OX; and a defected doped inorganic compound with a chemical composition of (M3OX)?. The value of n is 1 or 2, x is greater than 0 and less than or equal to 0.25, and y is greater than or equal to 0 and less than or equal to 0.25. Also, M1 is at least one of Mg and Ca, M2 and M3 are each at least one of Fe, Al, Sc, La, and Y, and X is at least one of F, Cl, Br, and I.

Abstract: An ionic conductor includes an inorganic oxychloride compound with a chemical composition of (Fe1-xMx)O1-y(OH)yCl1-x where M is selected from at least one of Mg and Ca, and x is greater than 0 and less than or equal to 0.25, y is greater than or equal to 0 and less than or equal to 0.25. The inorganic oxychloride compound has a thermal decomposition start temperature of about 410° C. and x-ray diffraction peaks (2?) between about 20.79° and about 22.79°, between about 30.03° and about 32.03°, between about 39.47° and about 41.47°, and between about 76.44° and about 78.44°.

Abstract: A lithium-ion conductor includes an inorganic compound with a chemical composition of Li2?3x+y?zFexOy(OH)1?yCl1?z, where x is greater than or equal to 0 and less than 1, y is greater than or equal to 0 and less than or equal 1, and z is greater than or equal to 0 and less than or equal 0.25. Also, the inorganic compound has or exhibits a thermal decomposition temperature greater than 390° C., an ionic conductivity greater than about 1.0×10?4 S/cm at 25° C., and has a crystal structure that reflects or exhibits x-ray diffraction peaks with a 2? between about 22.12° and about 24.12°, between about 31.97° and about 33.97°, between about 39.55° and about 41.55°, between about 46.46° and about 48.46°, between about 57.77° and about 59.77°, and between about 68.04° and about 70.04°.

Abstract: A method for manufacturing an SiC semiconductor device includes a step of setting, on a main surface of an SiC wafer, a scheduled cutting line that demarcates a plurality of chip regions including a first chip region in which a functional device is formed and a second chip region in which a monitor pattern for performing process control of the first chip region is formed, a step of forming, on the main surface, a plurality of main surface electrodes respectively covering the chip regions such as to expose the scheduled cutting line and respectively forming a portion of the functional device and a portion of the monitor pattern, a step of irradiating laser light to the scheduled cutting line and forming a modified region, and a step of cleaving the SiC wafer with the modified region as a starting point.

Abstract: A response control system for a hydrostatic-mechanical transmission. In this system, it is determined in digging/moving operation whether an actual speed ratio which is the ratio of the revolution speed of the output shaft to the revolution speed of the power source is equal to a specified value or less, and if so, a target speed ratio which is a target value for the ratio of the revolution speed of the output shaft to the revolution speed of the power source is set, limiting the amount of change in the target speed ratio per unit time. Based on the target speed ratio thus set, the angle of at least either of discharge controlling swash plates is controlled, thereby reducing vehicle acceleration at the primary stage of digging. In order to slow down the response to a change in load during digging operation, a constant indicating the response to a change in engine revolution is set small in proximity to a target engine revolution speed.

Abstract: A vehicle inching mechanism is interlocked with a braking mechanism so as to overlap their operating ranges without hampering the low-speed start or stop of the vehicle by the inching mechanism. An inching pedal and a brake pedal are mounted side by side on a stationary shaft via sleeves rotatably fitted thereover and linked to an inching valve and a brake master cylinder, respectively. The sleeves have square jaws at their opposed ends for mating engagement, with clearances therebetween to allow rotation of either sleeve relative to the other within limits. A torsion spring is anchored at one end to the inching pedal sleeve and held at the other end against an abutment on the brake pedal sleeve. Upon depression of the inching pedal, therefore, not only the inching valve but also the brake master cylinder is activated, first through the torsion spring and then through the intermeshing jaws. The depression of the brake pedal results only in the actuation of the master cylinder.

Abstract: An operating force transmitting apparatus adapted to be used for brake or clutch operation of a vehicle which is capable of reducing required operating force. The apparatus comprises a pair of brackets fixedly secured to a vehicle frame, a first shaft mounted on said pair of brackets, a first cylinder rotatably mounted on the first shaft, the first cylinder having an operating member and a lever fixedly secured thereto, a cam follower mounted for rotation on the lever, a second shaft mounted on the pair of the brackets, a second cylinder rotatably mounted on the second shaft, a cam link fixedly secured to the second cylinder, and a spring for urging the cam link to always contact with the cam follower.