Abstract: A method of manufacturing a light emitting device comprising: providing an element-structure wafer having a first substrate and a laser element structure on the first substrate, the laser element structure having ridges on a side opposite to the first substrate and raising layers respectively formed above the ridges; bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer; removing at least a portion of the first substrate to obtain a thinned bonded wafer; singulating the thinned bonded wafer to obtain a laser element with the second substrate; mounting the laser element with the second substrate on a heat dissipating member such that a laser element side of the laser element with the second substrate faces the heat dissipating member; and removing the second substrate from the laser element.

Abstract: A semiconductor laser device includes a mounting board, a semiconductor laser element provided on the mounting board, and an optical member. The optical member is made of silicon having a first {110} plane, a first {100} plane that is adjacent to the first {110} plane, a second {110} plane, and a second {100} plane that is adjacent to the second {110} plane, with the second {100} plane being fixed on the mounting board, and the first {110} plane being covered by a reflective film to reflect laser light emitted from the semiconductor laser element.

Abstract: A semiconductor laser device includes a mounting board, a semiconductor laser element disposed on the mounting board, and an optical member made of silicon having a {110} plane and a {100} plane. One of the {110} plane and the {100} plane is fixed on the mounting board, and the other one of the {110} plane and the {100} plane is covered by a reflective film to reflect laser light emitted from the semiconductor laser element.

Abstract: A method of manufacturing a light emitting device comprising: providing an element-structure wafer having a first substrate and a laser element structure on the first substrate, the laser element structure having ridges on a side opposite to the first substrate and raising layers respectively formed above the ridges; bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer; removing at least a portion of the first substrate to obtain a thinned bonded wafer; singulating the thinned bonded wafer to obtain a laser element with the second substrate; mounting the laser element with the second substrate on a heat dissipating member such that a laser element side of the laser element with the second substrate faces the heat dissipating member; and removing the second substrate from the laser element.

Abstract: A method of manufacturing a light emitting device includes providing an element-structure wafer that includes a first substrate and a laser element structure on the first substrate, bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer, removing at least a portion of the first substrate to obtain a thinned bonded wafer, singulating the thinned bonded wafer to obtain a laser element with the second substrate, mounting the laser element with the second substrate on a heat dissipating member such that a laser element structure side of the laser element with the second substrate faces the heat dissipating member, and removing the second substrate from the laser element.

Abstract: A method of forming semiconductor nanorods includes: placing, in a chamber, a masking material and a base comprising a semiconductor, wherein an etching rate of the masking material in a chemical reaction with a reactant gas during dry etching is lower than an etching rate of a semiconductor in a chemical reaction with the reactant gas during dry etching; and performing dry-etching to form a plurality of dot-masks, each having a form of a dot containing the masking material, on a surface of the semiconductor and to remove a portion of the semiconductor exposed from the dot-masks, wherein the dry-etching is performed under a pressure in the chamber in a predetermined range that allows the masking material scattered by the etching to be adhered to a surface of the semiconductor with a predetermined size of the dots and a predetermined density of the dots.

Abstract: A semiconductor laser device includes a mounting board, a semiconductor laser element provided on the mounting board, and an optical member. The optical member is made of silicon having a first {110} plane, a first {100} plane that is adjacent to the first {110} plane, a second {110} plane, and a second {100} plane that is adjacent to the second {110} plane, with the second {100} plane being fixed on the mounting board, and the first {110} plane being covered by a reflective film to reflect laser light emitted from the semiconductor laser element.

Abstract: A method for manufacturing an optical member includes providing a silicon substrate having a first main surface of a {110} plane and a second main surface of a {110} plane that are parallel to each other, forming mask patterns on the first main surface and the second main surface, each of the mask patterns having an opening extending in one direction, so that the opening on a first main surface side and the opening on a second main surface side are disposed alternately, or so that the opening on the second main surface side are disposed directly under the opening on the first main surface side, forming recesses having sloped surfaces in the first main surface side and the second main surface side by wet etching the silicon substrate using the mask patterns as masks, and forming a reflective film on the first main surface or the second main surface.

Abstract: A method of manufacturing a light emitting device includes providing an element-structure wafer that includes a first substrate and a laser element structure on the first substrate, bonding a laser element structure side of the element-structure wafer to a second substrate to obtain a bonded wafer, removing at least a portion of the first substrate to obtain a thinned bonded wafer, singulating the thinned bonded wafer to obtain a laser element with the second substrate, mounting the laser element with the second substrate on a heat dissipating member such that a laser element structure side of the laser element with the second substrate faces the heat dissipating member, and removing the second substrate from the laser element.

Abstract: A method of manufacturing a light emitting device includes: providing a wafer including a conductive first substrate, a laser element structure on an upper side of the first substrate, and an upper surface electrode on an upper surface of the element structure; bonding the wafer to a second substrate at an upper surface electrode side of the wafer; removing a portion of the first substrate to reduce a thickness of the wafer; forming a lower surface electrode on a lower surface of the first substrate at which the removing of the portion of the first substrate has been performed; singulating the wafer to obtain a laser element; and mounting the laser element on a submount such that the lower surface electrode faces the submount.

Abstract: A semiconductor laser device includes a mounting board, a semiconductor laser element disposed on the mounting board, and an optical member made of silicon having a {110} plane and a {100} plane. One of the {110} plane and the {100} plane is fixed on the mounting board, and the other one of the {110} plane and the {100} plane is covered by a reflective film to reflect laser light emitted from the semiconductor laser element.

Abstract: A method for manufacturing an optical member includes providing a silicon substrate having a first main surface of a {110} plane, forming a mask pattern having an opening extending in a <100> direction on the first main surface of the silicon substrate, and forming a sloped surface of a {100} plane in the silicon substrate by wet etching the silicon substrate from a first main surface side using the mask pattern as a mask. A method for manufacturing a semiconductor laser device includes fixing the optical member formed by the method for manufacturing the optical member and a semiconductor laser element to a mounting board so that laser light emitted from the semiconductor laser element is irradiated to a reflective film of the optical member.

Abstract: A method of manufacturing a light emitting device includes: providing a wafer including a conductive first substrate, a laser element structure on an upper side of the first substrate, and an upper surface electrode on an upper surface of the element structure; bonding the wafer to a second substrate at an upper surface electrode side of the wafer; removing a portion of the first substrate to reduce a thickness of the wafer; forming a lower surface electrode on a lower surface of the first substrate at which the removing of the portion of the first substrate has been performed; singulating the wafer to obtain a laser element; and mounting the laser element on a submount such that the lower surface electrode faces the submount.

Abstract: A method of forming semiconductor nanorods includes: placing, in a chamber, a masking material and a base comprising a semiconductor, wherein an etching rate of the masking material in a chemical reaction with a reactant gas during dry etching is lower than an etching rate of a semiconductor in a chemical reaction with the reactant gas during dry etching; and performing dry-etching to form a plurality of dot-masks, each having a form of a dot containing the masking material, on a surface of the semiconductor and to remove a portion of the semiconductor exposed from the dot-masks, wherein the dry-etching is performed under a pressure in the chamber in a predetermined range that allows the masking material scattered by the etching to be adhered to a surface of the semiconductor with a predetermined size of the dots and a predetermined density of the dots.

Abstract: A method for manufacturing an optical member includes providing a silicon substrate having a first main surface of a {110} plane and a second main surface of a {110} plane that are parallel to each other, forming mask patterns on the first main surface and the second main surface, each of the mask patterns having an opening extending in one direction, so that the opening on a first main surface side and the opening on a second main surface side are disposed alternately, or so that the opening on the second main surface side are disposed directly under the opening on the first main surface side, forming recesses having sloped surfaces in the first main surface side and the second main surface side by wet etching the silicon substrate using the mask patterns as masks, and forming a reflective film on the first main surface or the second main surface.

Abstract: A method for manufacturing an optical member includes providing a silicon substrate having a first main surface of a {110} plane, forming a mask pattern having an opening extending in a <100> direction on the first main surface of the silicon substrate, and forming a sloped surface of a {100} plane in the silicon substrate by wet etching the silicon substrate from a first main surface side using the mask pattern as a mask. A method for manufacturing a semiconductor laser device includes fixing the optical member formed by the method for manufacturing the optical member and a semiconductor laser element to a mounting board so that laser light emitted from the semiconductor laser element is irradiated to a reflective film of the optical member.

Abstract: A method of manufacturing a semiconductor laser element including: preparing a wafer; forming first grooves on at least one of an upper surface and a lower surface of the wafer, each of the first grooves being spaced apart from the optical waveguide formed in the wafer and extending in a direction intersecting the optical waveguide in a plan view; forming second grooves on the one of the upper surface and the lower surface of the wafer, each of the second grooves extending in a direction intersecting a straight line extended from each of the first grooves, and each of the second grooves having a smooth surface compared with the first grooves; dividing the wafer along the first grooves to obtain a plurality of laser bars; and dividing the laser bars in a direction intersecting an extending direction of the first grooves to obtain the semiconductor laser elements.

Abstract: A method for manufacturing a nitride semiconductor laser element having a nitride semiconductor layer including at least an active layer provided on a substrate, a pair of cavity planes formed on the nitride semiconductor layer, and a protruding part where part of the substrate protrudes from said cavity plane, said method comprises: a step of forming the nitride semiconductor layer on the substrate; a first etching step of forming a first groove by etching at least the nitride semiconductor layer; and a second etching step of forming the cavity plane, in the second etching step, the inner wall of the first groove and part of the nitride semiconductor layer surface adjacent to the first groove are etched to form a second groove, and form the upper face of the protruding part.

Abstract: A method for manufacturing a nitride semiconductor laser element having a nitride semiconductor layer including at least an active layer provided on a substrate, a pair of cavity planes formed on the nitride semiconductor layer, and a protruding part where part of the substrate protrudes from said cavity plane, said method comprises: a step of forming the nitride semiconductor layer on the substrate; a first etching step of forming a first groove by etching at least the nitride semiconductor layer; and a second etching step of forming the cavity plane, in the second etching step, the inner wall of the first groove and part of the nitride semiconductor layer surface adjacent to the first groove are etched to form a second groove, and form the upper face of the protruding part.

Abstract: A nitride semiconductor laser element, has: a nitride semiconductor layer including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer laminated in that order; and resonator end faces formed mutually opposing at the end of said nitride semiconductor layers, wherein an impurity is contained in at least an optical output region of the resonator end faces, with the concentration of said impurity having a concentration distribution that is asymmetric in reference to a peak position, in the lamination direction of the nitride semiconductor layers, and said optical output region has a wider bandgap than other regions in the active layer or said optical output region has a higher impurity concentration than other regions in the active layer.