Abstract: There is provided a surface emitting laser capable of making a confinement effect of light and current different between at least two mesa structures, and capable of improving productivity.

Abstract: The present technology provides a surface emitting laser capable of suppressing a decrease in luminous efficiency. The present technology provides a surface emitting laser including: first and second multilayer film reflectors; a plurality of active layers laminated together between the first and second multilayer film reflectors; a tunnel junction disposed between two active layers adjacent to each other in a lamination direction among the plurality of active layers; and an oxide confinement layer disposed between one active layer of the two adjacent active layers and the tunnel junction. According to the present technology, it is possible to provide a surface emitting laser capable of suppressing a decrease in luminous efficiency.

Abstract: A semiconductor laser according to one embodiment of the present disclosure includes: a first semiconductor layer of a first conductivity type; an active layer; and a second semiconductor layer of a second conductivity type stacked on the first semiconductor layer with the active layer interposed therebetween, and provided with a strip-shaped ridge. The semiconductor laser further includes: a pair of resonator end faces facing each other across the ridge; and an electrode layer electrically coupled to an upper surface of the ridge.

Abstract: Provided is a surface emitting laser capable of reducing resistance while suppressing a decrease in manufacturing efficiency. The present technology provides a surface emitting laser including: a first multilayer film reflector; a second multilayer film reflector; and an active layer disposed between the first multilayer film reflector and the second multilayer film reflector, in which in the first multilayer film reflector and/or the second multilayer film reflector, a high-concentration impurity region having a higher impurity concentration than other regions is partially provided in a thickness direction. According to the present technology, there is provided a surface emitting laser capable of reducing resistance while suppressing a decrease in manufacturing efficiency.

Abstract: A surface emitting laser according to one embodiment of the disclosure includes a stacked structure including, in order, a first DBR layer, an active layer, a second DBR layer, and a first electrically conductive contact layer. The stacked structure further includes a second electrically conductive contact layer and a two-dimensional electron gas generation layer between the first DBR layer and the active layer or in the first DBR layer. The surface emitting laser further includes a first electrode layer in contact with the first electrically conductive contact layer and a second electrode layer in contact with the second electrically conductive contact layer.

Abstract: Provided is an element structure includes a heat dissipation member and a support member provided on the heat dissipation member. The support member includes a first mount material, a stress relaxation layer, and a second mount material in a stacking direction. The element structure further includes a functional element provided on the support member.

Abstract: This element structure includes a heat dissipation member, a support member provided on the heat dissipation member and including therein a stress relaxation layer in a stacking direction, and a functional element provided on the support member.