Abstract: A copper alloy plate containing in a center part of a plate thickness direction more than 2.0% (% by mass) and 32.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.1% of Fe, and 0.005% or more and 0.1% or less of P; and the balance Cu, including a surface layer part in which a surface Zn concentration in a surface is 60% or less of a center Zn concentration in the center part, having a depth from the surface to where Zn concentration is 90% of the center Zn concentration; and in the surface layer, the Zn concentration increases from the surface toward the center part in the plate thickness direction at a concentration gradient of 10% by mass/?m or more and 1000% by mass/?m or less.

Abstract: Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/?m or more and 5 mass %/?m or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

Abstract: A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 ?m to 1.0 ?m inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 ?m to 2.5 ?m inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 ?m to 3.0 ?m inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 ?m and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 ?m or more, and a grain size ratio Ds/Dc is five or less.

Abstract: To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/?m or more and 50% by mass/?m or less.

Abstract: A copper alloy plate including 0.3 mass % or more and 1.2 mass % or less of Mg, 0.001 mass % or more and 0.2 mass % or less of P, and the balance Cu with inevitable impurities in a thickness center portion in a plate thickness direction; Mg concentration on a plate surface is 30% or less of bulk Mg concentration at the thickness center portion; a surface layer part having a depth from the plate surface to where it is 90% of the bulk Mg concentration is provided; and in the surface layer part, the Mg concentration increases from the plate surface toward the thickness center portion with a concentration gradient 1.8 mass %/?m or more and 50 mass %/?m or less.

Abstract: A copper alloy plastically-worked material comprises Mg in the amount of 10-100 mass ppm and a balance of Cu and inevitable impurities, which comprise 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio of [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 or greater and 50 or less. The electrical conductivity is 97% IACS or greater. The tensile strength is 275 MPa or less. The heat-resistant temperature after draw working is 150° C. or higher.

Abstract: This copper alloy contains greater than 10 mass ppm and less than 100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise: 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50, an electrical conductivity is 97% IACS or greater. The half-softening temperature ratio TLD/TTD is greater than 0.95 and less than 1.08. The half-softening temperature TLD is 210° C. or higher.

Abstract: A copper alloy plastically-worked material comprises Mg in the amount of greater than 10 mass ppm and 100 mass ppm or less and a balance of Cu and inevitable impurities, that comprise 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio of [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 or greater and 50 or less, the electrical conductivity is 97% IACS or greater. The tensile strength is 200 MPa or greater. The heat-resistant temperature is 150° C. or higher.

Abstract: This copper alloy of one aspect contains greater than 10 mass ppm and less than 100 mass ppm of Mg, with a balance being Cu and inevitable impurities, in which among the inevitable impurities, a S amount is 10 mass ppm or less, a P amount is 10 mass ppm or less, a Se amount is 5 mass ppm or less, a Te amount is 5 mass ppm or less, an Sb amount is 5 mass ppm or less, a Bi amount is 5 mass ppm or less, an As amount is 5 mass ppm or less, a total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less, a mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50, an electrical conductivity is 97% IACS or greater, and a residual stress ratio at 150° C. for 1000 hours is 20% or greater.

Abstract: This copper alloy contains 10-100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise; 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50. The electrical conductivity is 97% IACS or greater. The half-softening temperature is 200° C. or higher. The residual stress ratio RSG at 180° C. for 30 hours is 20% or greater. The ratio RSG/RSB at 180° C. for 30 hours is greater than 1.0.

Abstract: A Cu—Ni—Si based copper alloy containing Ni and Si: in a center portion in a plate thickness direction, containing 0.4% by mass or more and 5.0% by mass or less of Ni, 0.05% by mass or more and 1.5% by mass or less of Si, and the balance Cu and inevitable impurities; where an Ni concentration on a plate surface is 70% or less of a center Ni concentration in the thickness center portion; a surface layer portion having a depth from the plate surface to be 90% of the center Ni concentration; in the surface layer portion, the Ni concentration increases from the plate surface toward the thickness center portion at 5.0% by mass/µm or more and 100% by mass/µm or less of a concentration gradient; to improve the electric connection reliability under high-temperature environment.

Abstract: Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/m or more and 5 mass %/m or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

Abstract: A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 ?m to 1.2 ?m inclusive; the copper-tin alloy layer is a compound alloy layer in which Cu6Sn5 is a main ingredient and part of copper in the Cu6Sn5 is substituted with nickel, and an average crystal grain size is 0.2 ?m to 1.5 ?m inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 ?m to 1000 ?m inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.

Abstract: A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 ?m to 1.0 ?m inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 ?m to 2.5 ?m inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 ?m to 3.0 ?m inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 ?m and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 ?m or more, and a grain size ratio Ds/Dc is five or less.

Abstract: A copper alloy plate containing in a center part of a plate thickness direction more than 2.0% (% by mass) and 32.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.1% of Fe, and 0.005% or more and 0.1% or less of P; and the balance Cu, including a surface layer part in which a surface Zn concentration in a surface is 60% or less of a center Zn concentration in the center part, having a depth from the surface to where Zn concentration is 90% of the center Zn concentration; and in the surface layer, the Zn concentration increases from the surface toward the center part in the plate thickness direction at a concentration gradient of 10% by mass/?m or more and 1000% by mass/?m or less.

Abstract: To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/?m or more and 50% by mass/?m or less.

Abstract: A copper alloy plate including 0.3 mass % or more and 1.2 mass % or less of Mg, 0.001 mass % or more and 0.2 mass % or less of P, and the balance Cu with inevitable impurities in a thickness center portion in a plate thickness direction; Mg concentration on a plate surface is 30% or less of bulk Mg concentration at the thickness center portion; a surface layer part having a depth from the plate surface to where it is 90% of the bulk Mg concentration is provided; and in the surface layer part, the Mg concentration increases from the plate surface toward the thickness center portion with a concentration gradient 1.8 mass %/?m or more and 50 mass %/?m or less.

Abstract: A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 ?m to 1.2 ?m inclusive; the copper-tin alloy layer is a compound alloy layer in which Cu6Sn5 is a main ingredient and part of copper in the Cu6Sn5 is substituted with nickel, and an average crystal grain size is 0.2 ?m to 1.5 ?m inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 ?m to 1000 ?m inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.

Abstract: A terminal material for connectors, which is obtained by sequentially laminating on a substrate that is formed of copper or a copper alloy, a nickel or nickel alloy layer, a copper-tin alloy layer and a tin layer in this order, and: the tin layer has an average thickness of from 0.2 ?m to 1.2 ?m (inclusive); the copper-tin alloy layer is a compound alloy layer that is mainly composed of Cu6Sn5, with some of the copper in the Cu6Sn5 being substituted by nickel, and has an average crystal grain diameter of from 0.2 ?m to 1.5 ?m (inclusive); a part of the copper-tin alloy layer is exposed from the surface of the tin layer, with the exposure area ratio being from 1% to 60% (inclusive); the nickel or nickel alloy layer has an average thickness of from 0.05 ?m to 1.0 ?m (inclusive) and an average crystal grain diameter of from 0.01 ?m to 0.5 ?m (inclusive).

Abstract: A terminal material for connectors, which is obtained by sequentially laminating on a substrate that is formed of copper or a copper alloy, a nickel or nickel alloy layer, a copper-tin alloy layer and a tin layer in this order, and: the tin layer has an average thickness of from 0.2 ?m to 1.2 ?m (inclusive); the copper-tin alloy layer is a compound alloy layer that is mainly composed of Cu6Sn5, with some of the copper in the Cu6Sn5 being substituted by nickel, and has an average crystal grain diameter of from 0.2 ?m to 1.5 ?m (inclusive); a part of the copper-tin alloy layer is exposed from the surface of the tin layer, with the exposure area ratio being from 1% to 60% (inclusive); the nickel or nickel alloy layer has an average thickness of from 0.05 ?m to 1.0 ?m (inclusive) and an average crystal grain diameter of from 0.01 ?m to 0.5 ?m (inclusive).