Abstract: A light-emitting device includes: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole transport layer between the anode and the light-emitting layer, the hole transport layer containing carbon and a metal oxide in a prescribed, adjusted ratio.

Abstract: An electron transport layer of a display device includes a mixture in which a first material and a second material are mixed, an electron affinity of a first light-emitting layer is equal to or smaller than an electron affinity of the first material, an electron affinity of the second material is smaller than the electron affinity of the first material, and an electron affinity of a second light-emitting layer is equal to or smaller than the electron affinity of the second material.

Abstract: A light-emitting element has the following: a cathode; an anode; a light-emitting layer disposed between the cathode and the anode, and containing quantum dots; and a hole transport layer disposed between the anode and light-emitting layer. The hole transport layer has a first region adjacent to the anode. The hole transport layer also has a second region closer to the light-emitting layer than the first region is. The second region adjoins to the light-emitting layer. The first region has an ionization potential larger than an ionization potential of the second region and larger than an ionization potential of the light-emitting layer.

Abstract: A light-emitting element includes: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole transport layer between the anode and the light-emitting layer, the hole transport layer including: a p-type semiconductor layer of a p-type semiconductor material provided in a form of a layer; and a n-type semiconductor material dispersed in the p-type semiconductor layer.

Abstract: A light-emitting element includes: a first electrode; a second electrode; a quantum dot layer including layered quantum dots between the first electrode and the second electrode; and a hole transport layer formed of LaNiO3 between the quantum dot layer and the first electrode.

Abstract: A light-emitting element includes a hole transport layer between a light-emitting layer and an anode, the hole transport layer containing either a metal oxide of (NiO)1-x(LaNiO3)x (composition formula 1) or (CuyO)1-x(LaNiO3)x (composition formula 2), where 0<x?1 and 1?y?2.

Abstract: A light-emitting element is provided to improve light emission efficiency of a light-emitting element. The light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, in which quantum dots are layered; and a hole-transport layer provided between the quantum dot layer and the first electrode, wherein the hole-transport layer includes a plurality of layers each containing a different material, the plurality of layers of the hole-transport layer each have an ionization potential increasing from the first electrode toward the quantum dot layer, and, among the plurality of layers of the hole-transport layer, a layer in contact with the quantum dot layer is higher in ionization potential than the quantum dot layer.

Abstract: A light-emitting device includes: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole transport layer between the anode and the light-emitting layer, the hole transport layer containing carbon and a metal oxide in a prescribed, adjusted ratio.

Abstract: A nanofiber sensor includes a plurality of pairs of electrodes and nanofibers respectively bridging the gaps between the electrodes in the pair, between the electrodes in the pair, and between the electrodes in the pair. At least two pairs of electrodes of the plurality of pairs of electrodes are different from each other in structures.

Abstract: A light-emitting element is provided to improve light emission efficiency of a light-emitting element. The light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, in which quantum dots are layered; and a hole-transport layer provided between the quantum dot layer and the first electrode, wherein the hole-transport layer includes a plurality of layers each containing a different material, the plurality of layers of the hole-transport layer each have an ionization potential increasing from the first electrode toward the quantum dot layer, and, among the plurality of layers of the hole-transport layer, a layer in contact with the quantum dot layer is higher in ionization potential than the quantum dot layer.

Abstract: A light-emitting element includes: a first electrode; a second electrode; a quantum dot layer including layered quantum dots between the first electrode and the second electrode; and a hole transport layer formed of LaNiO3 between the quantum dot layer and the first electrode.

Abstract: A nanofiber sensor includes a plurality of pairs of electrodes and nanofibers respectively bridging the gaps between the electrodes in the pair, between the electrodes in the pair, and between the electrodes in the pair. At least two pairs of electrodes of the plurality of pairs of electrodes are different from each other in structures.

Abstract: A field-effect transistor includes: a nitride semiconductor layer that includes a heterojunction; a source electrode and a drain electrode that are disposed on the nitride semiconductor layer at an interval; a first gate electrode that is located between the source electrode and the drain electrode and performs a normally-on operation; and a second gate electrode that is located between the first gate electrode and the source electrode and performs a normally-off operation. The first gate electrode is disposed to surround the drain electrode in plan view. The second gate electrode is disposed to surround the source electrode in plan view.

Abstract: A field-effect transistor includes: a nitride semiconductor layer that includes a heterojunction; a source electrode and a drain electrode; a first gate electrode that is disposed to surround the drain electrode in a plan view and performs a normally-on operation; and a second gate electrode is disposed to surround the first gate electrode in a plan view and performs a normally-off operation. The first gate electrode and the second gate electrode include straight portions in which both an edge of the first gate electrode and an edge of the second gate electrode are substantially straight in the plan view and end portions formed by corner portions which are curved or bent in the plan view. An interval, a length, or a radius of curvature of one of the first gate electrode, the second gate electrode, and the source electrode is set such that concentration of an electric field at the end portion is alleviated.

Abstract: A semiconductor device includes a wall-like first guard ring structure that is formed to surround a periphery of an element formation region on a semiconductor substrate and that extends in a thickness direction of the substrate through an insulating film; and a wall-like second guard ring structure that is formed to surround the periphery of the element formation region between the element formation region on the semiconductor substrate and the first guard ring structure and that extends in the thickness direction of the substrate through the insulating films. The first and second guard ring structures are formed of a conductive material, and the first guard ring structure is provided in a state of being insulated from the semiconductor substrate, the element formation region and the second guard ring structure.

Abstract: In a field effect transistor, a carbon concentration in a buffer layer at the side closer to a high resistance layer is not less than 0.8×1019/cm3 and not more than 1.0×1021/cm3, a carbon concentration in the high resistance layer at the side closer to the buffer layer is not less than 3.7×1018/cm3 and not more than 1.0×1021/cm3, and a carbon concentration in the high resistance layer at the side closer to the channel layer is not less than 1.4×1019/cm3 and not more than 1.0×1021/cm3.

Abstract: In a field effect transistor, a carbon concentration in a buffer layer at the side closer to a high resistance layer is not less than 0.8×1019/cm3 and not more than 1.0×1021/cm3, a carbon concentration in the high resistance layer at the side closer to the buffer layer is not less than 3.7×1018/cm3 and not more than 1.0×1021/cm3, and a carbon concentration in the high resistance layer at the side closer to the channel layer is not less than 1.4×1019/cm3 and not more than 1.0×1021/cm3.

Abstract: In this GaN-based HFET, 2DEG (2-Dimensional Electron Gas) exclusion regions (31) in which no 2DEG is present are formed in the GaN-based multilayered body (5) under regions which are positioned lengthwise outer than imaginary lines (M1, M2) extended from lengthwise ends (11A, 11B) of drain electrodes (11) in a widthwise direction orthogonal to the lengthwise direction and which are adjacent to source electrodes (12), as well as in the GaN-based multilayered body (5) under regions which are lengthwise outwardly adjacent to the lengthwise ends (11A, 11B) of the drain electrodes (11). By the presence of the 2DEG exclusion region (31), concentration of electron flows from end portions of the source electrodes (12) toward end portions of the drain electrodes (11) due to dynamic electric field variations on switching operations can be avoided.

Abstract: According to this GaN-based HFET, resistivity ? of a semi-insulating film forming a gate insulating film is 3.9×109 ?cm. The value of this resistivity ? is a value derived when the current density is 6.25×10?4 (A/cm2). By inclusion of the gate insulating film by a semi-insulating film having a resistivity ?=3.9×109 ?cm, a withstand voltage of 1000 V can be obtained. Meanwhile, the withstand voltage abruptly drops as the resistivity of the gate insulating film exceeds 1×1011 ?cm, and the gate leak current increases when the resistivity of the gate insulating film drops below 1×107 ?cm.

Abstract: The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer pr