Patents by Inventor Shinichi Higai

Shinichi Higai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Perovskite material with anion-controlled dielectric properties, thin film capacitor device, and method for manufacturing the same
    Patent number: 9218907
    Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3? anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3??)?-(ABO3????N?)1??. A represents a divalent element, B represents a tetravalent element, ? satisfies 0.005???1.0, 1?? satisfies 0.05?1???0.9, and 1?? is an area ratio between the regions containing rich N3? anions and the matrix of remaining oxide perovskite material.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: December 22, 2015
    Assignee: Murata Manufacturing Co., Ltd
    Inventors: Ivoyl Koutsaroff, Shinichi Higai, Akira Ando
  • PEROVSKITE MATERIAL WITH ANION-CONTROLLED DIELECTRIC PROPERTIES, THIN FILM CAPACITOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20150228408
    Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3? anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3??)?-(ABO3????N?)1??. A represents a divalent element, B represents a tetravalent element, ? satisfies 0.005???1.0, 1?? satisfies 0.05?1???0.9, and 1?? is an area ratio between the regions containing rich N3? anions and the matrix of remaining oxide perovskite material.
    Type: Application
    Filed: August 26, 2014
    Publication date: August 13, 2015
    Inventors: Ivoyl KOUTSAROFF, Shinichi HIGAI, Akira ANDO
  • Perovskite material with anion-controlled dielectric properties, thin film capacitor device, and method for manufacturing the same
    Patent number: 8848336
    Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3? anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3-?)?-(ABO3-?-?N?)1-?. A represents a divalent element, B represents a tetravalent element, ? satisfies 0.005???1.0, 1-? satisfies 0.05?1-??0.9, and 1-? is an area ratio between the regions containing rich N3? anions and the matrix of remaining oxide perovskite material.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: September 30, 2014
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Ivoyl Koutsaroff, Shinichi Higai, Akira Ando
  • PEROVSKITE MATERIAL WITH ANION-CONTROLLED DIELECTRIC PROPERTIES, THIN FILM CAPACITOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20130003254
    Abstract: A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3? anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3-?)?-(ABO3-?-?N?)1-?. A represents a divalent element, B represents a tetravalent element, ? satisfies 0.005???1.0, 1-? satisfies 0.05?1-??0.9, and 1-? is an area ratio between the regions containing rich N3? anions and the matrix of remaining oxide perovskite material.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 3, 2013
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Ivoyl KOUTSAROFF, Shinichi HIGAI, Akira ANDO
  • Method of highly purifying Si surface and a atomically flattening method for an Si surface
    Publication number: 20010018890
    Abstract: Metal impurities, particularly, Ni as a transition metal under the Si surface which are mainly attributable to surface defects are removed to highly purify the Si surface, and the Si surface is atomically flattened correspondingly by hydrogenating the Si surface containing metal impurities under the surface by means of a gas phase process or a liquid phase process, thereby extracting the metal impurities onto the Si surface.
    Type: Application
    Filed: February 26, 2001
    Publication date: September 6, 2001
    Inventors: Shinichi Higai, Takahisa Oono