Abstract: A semiconductor device of the present invention comprises: an outer package; a first lead frame including a first relay lead, a first die pad with a power element mounted thereon, and a first external connection lead which has an end protruding from the outer package; and a second lead frame including a second relay lead, a second die pad with a control element mounted thereon, and a second external connection lead which has an end protruding from the outer package, wherein the first die pad and the second die pad or the first external connection lead and the second relay lead are joined to each other at a joint portion, and an end of the second relay lead extending from a joint portion with the first relay lead is located inside the outer package.

Abstract: A semiconductor device of the present invention comprises: an outer package; a first lead frame including a first relay lead, a first die pad with a power element mounted thereon, and a first external connection lead which has an end protruding from the outer package; and a second lead frame including a second relay lead, a second die pad with a control element mounted thereon, and a second external connection lead which has an end protruding from the outer package, wherein the first die pad and the second die pad or the first external connection lead and the second relay lead are joined to each other at a joint portion, and an end of the second relay lead extending from a joint portion with the first relay lead is located inside the outer package.

Abstract: A semiconductor device of the present invention comprises: an outer package; a first lead frame including a first relay lead, a first die pad with a power element mounted thereon, and a first external connection lead which has an end protruding from the outer package; and a second lead frame including a second relay lead, a second die pad with a control element mounted thereon, and a second external connection lead which has an end protruding from the outer package, wherein the first die pad and the second die pad or the first external connection lead and the second relay lead are joined to each other at a joint portion, and an end of the second relay lead extending from a joint portion with the first relay lead is located inside the outer package.

Abstract: In a semiconductor device where a semiconductor element having an asymmetric temperature distribution during an operation is mounted, inner leads on the right and left ends have asymmetric lengths, so that the right and left regions of a semiconductor element mounting part have different sizes. The semiconductor element is mounted so as to have a high-temperature region side in a wide region of the mounting part, and the inner leads are wire bonded at the center to the wide region of the mounting part. It is thus possible to provide a small semiconductor device in which a long semiconductor element is mounted with heat dissipation.

Abstract: In a semiconductor device where a semiconductor element having an asymmetric temperature distribution during an operation is mounted, inner leads on the right and left ends have asymmetric lengths, so that the right and left regions of a semiconductor element mounting part have different sizes. The semiconductor element is mounted so as to have a high-temperature region side in a wide region of the mounting part, and the inner leads are wire bonded at the center to the wide region of the mounting part. It is thus possible to provide a small semiconductor device in which a long semiconductor element is mounted with heat dissipation.

Abstract: An optoelectronic device that provides an excellent reproduction signal and a stable servo control while preventing deterioration of S/N ratio caused by stray light. The optoelectronic device has a semiconductor laser (101) that emits light beams on an information-recording medium (105), a hologram optical element (102) having a diffraction grating region (108) and located between the semiconductor laser (101) and the information-recording medium (105), and a photodetector (106) for receiving light that is diffracted at the diffraction grating region (108) of the hologram optical element (102), among returning light beams from the information-recording medium (105), and the optoelectronic device has also a diffraction grating region (107) in the vicinity of the diffraction grating region (108) of the hologram optical element (102) so as to prevent stray light other than diffracted light from the diffraction grating region (108) from entering the photodetector (106).

Abstract: A lead frame includes a die pad including a die pad main portion having a large thickness and a die pad peripheral portion having an intermediate thickness smaller than that of the die pad main portion, provided on at least one side of the die pad main portion, at least one support lead connected to the die pad, and at least two first inner leads having a small thickness smaller than that of the die pad peripheral portion, arranged such that end portions thereof are opposed to the die pad peripheral portion. The thick die pad provides good heat release properties, and reducing the thickness of the leads allows fine pitched leads to be produced. Such a lead frame can be manufactured easily by press stamping after belt-shaped regions having different thickness are formed by rolling.

Abstract: A semiconductor laser device includes a semiconductor laser element for emitting laser light onto a recording medium; beam dividing element provided in an optical path between the semiconductor laser element and the recording medium; a hologram optical element including a diffraction grating formed in a light-transmitting substrate, the hologram optical element located in an optical path between the beam dividing element and the semiconductor laser element; a servo-signal light-receiving element provided in an optical path of diffracted light transmitted through the diffraction grating for receiving the diffracted light; an information-signal light-receiving element for receiving light divided by the beam-dividing element, which is different from light divided by the beam-dividing element which is received by the diffraction grating; and a polarizing element provided in an optical path between the beam dividing element and the information-signal light-receiving element, wherein the semiconductor laser element