Abstract: A bag body of an airbag includes a recessed area that is sunken forward and extends vertically generally at the center in a left and right direction of the passenger side wall. The airbag internally includes a vertical tether that pulls the front end of the recessed area forward at airbag deployment. The airbag further includes two horizontal tethers; an upper horizontal tether and a lower horizontal tether, which connect the left side wall and right side wall of the bag body, respectively, and are deployable generally in a left and right direction in order to limit the clearance between the left side wall and right side wall. The upper horizontal tether is located in an area above the vertical tether and the lower horizontal tether is located in an area below the vertical tether.

Abstract: A device supporting the structural analysis of a module comprises: a storage means storing at least one module; and a conversion means that converts a prescribed target module among the modules stored by the storage means to a secondary module and stores same in the storage means. The conversion means reads the target module from the storage means and sequentially outputs to the secondary module each sentence written from a prescribed processing start location in the target module to a prescribed processing end location. The conversion means also recursively develops a sentence written in processing units etc., for execution, and outputs same to the secondary module, when the sentence is a module internal processing unit or a sentence that executes another module.

Abstract: A bag body of an airbag includes a recessed area that is sunken forward and extends vertically generally at the center in a left and right direction of the passenger side wall. The airbag internally includes a vertical tether that pulls the front end of the recessed area forward at airbag deployment. The airbag further includes two horizontal tethers; an upper horizontal tether and a lower horizontal tether, which connect the left side wall and right side wall of the bag body, respectively, and are deployable generally in a left and right direction in order to limit the clearance between the left side wall and right side wall. The upper horizontal tether is located in an area above the vertical tether and the lower horizontal tether is located in an area below the vertical tether.

Abstract: The present invention provides a technology capable of providing a semiconductor device having an MIM structure capacitor with improved reliability. The capacitor has a lower electrode, a capacitor insulating film, and an upper electrode. The lower electrode is comprised of a metal film embedded in an electrode groove formed in an insulating film over the main surface of a semiconductor substrate; and the upper electrode is comprised of a film stack of a TiN film (lower metal film) and a Ti film (cap metal film) formed over the TiN film (lower metal film).

Abstract: The present invention provides a technology capable of providing a semiconductor device having an MIM structure capacitor with improved reliability. The capacitor has a lower electrode, a capacitor insulating film, and an upper electrode. The lower electrode is comprised of a metal film embedded in an electrode groove formed in an insulating film over the main surface of a semiconductor substrate; and the upper electrode is comprised of a film stack of a TiN film (lower metal film) and a Ti film (cap metal film) formed over the TiN film (lower metal film).

Abstract: In one aspect, an impedance component which exhibits a high impedance in a high frequency region is arranged on a high pressure line formed on a secondary side of a transformer. The potential difference generated at both ends of the impedance component is used to detect an abnormal electrical discharge generated in the high pressure line. When the abnormal electrical discharge is detected, a switching operation is stopped by a controlling circuit whereby a protection operation is performed.

Abstract: An airbag for a front passenger's seat includes a left outer panel, right outer panel, left inner panel and right inner panel. The left and right outer panels are prepared as laterally symmetrical separate entities. Each of the left and right inner panels includes at the upper front end at full inflation a crossing edge that extends in a transverse direction on the airbag at full inflation. Each of the left and right outer panels includes at the upper periphery a central extended region that includes a joint edge for joint with the crossing edge of each of the inner panels. The central extended regions of the left and right outer panels are coupled together at their circumferences except the joint edges.

Abstract: An airbag for a front passenger's seat includes a left outer panel, right outer panel, left inner panel and right inner panel. The left and right outer panels are prepared as laterally symmetrical separate entities. Each of the left and right inner panels includes at the upper front end at full inflation a crossing edge that extends in a transverse direction on the airbag at full inflation. Each of the left and right outer panels includes at the upper periphery a central extended region that includes a joint edge for joint with the crossing edge of each of the inner panels. The central extended regions of the left and right outer panels are coupled together at their circumferences except the joint edges.

Abstract: In one aspect, an impedance component which exhibits a high impedance in a high frequency region is arranged on a high pressure line formed on a secondary side of a transformer. The potential difference generated at both ends of the impedance component is used to detect an abnormal electrical discharge generated in the high pressure line. When the abnormal electrical discharge is detected, a switching operation is stopped by a controlling circuit whereby a protection operation is performed.

Abstract: In one aspect, an impedance component which exhibits a high impedance in a high frequency region is arranged on a high pressure line formed on a secondary side of a transformer. The potential difference generated at both ends of the impedance component is used to detect an abnormal electrical discharge generated in the high pressure line. When the abnormal electrical discharge is detected, a switching operation is stopped by a controlling circuit, whereby a protection operation is performed.

Abstract: In one aspect, an impedance component which exhibits a high impedance in a high frequency region is arranged on a high pressure line formed on a secondary side of a transformer. The potential difference generated at both ends of the impedance component is used to detect an abnormal electrical discharge generated in the high pressure line. When the abnormal electrical discharge is detected, a switching operation is stopped by a controlling circuit, whereby a protection operation is performed.

Abstract: Multiple output power source apparatus enables to optimize efficiency for each output and to perform simultaneous shutdown and synchronous oscillations between the outputs. Power source circuits of various types connected to a power source are provided, and those power source circuits have a function of outputting an abnormality signal to other power source circuits when an abnormality occurs in the own circuit and shutting down the operation of the own circuit by an abnormality signal from other power source circuits and a function of outputting a synchronous oscillation signal synchronized with a switching oscillation frequency used for controlling the own circuit to other power source circuits and conducting synchronous control of the switching frequency used for controlling other power source circuits.

Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Abstract: Disclosed is a method of fabricating a semiconductor device including forming an insulating film on a silicon substrate; forming a contact hole in the insulating film; depositing a titanium film to be in contact with the silicon substrate in the contact hole; and causing a heat reaction between the titanium film and the silicon substrate such that the titanium film is subjected to silicide reaction with the thickness 4 nm to 48 nm or, more preferably, with the thickness of 8 nm to 34 nm. In the instance where the contact hole is filled with doped polycrystal silicon material, the titanium film is deposited to be in contact with the polycrystal silicon in the contact hole. The silicon substrate/silicon body may have at least a MISFET formed thereon in which case the contact hole is formed to expose an active region of the MISFET, as one example.

Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.