Abstract: This semiconductor device is provided with a device substrate in which a semiconductor circuit including two high frequency amplifiers; a cap substrate and a sealing frame of a conductor which forms and air-tightly seals space surrounding an area, in which the semiconductor circuit is formed, between the device substrate and the cap substrate, wherein the sealing frame is configured as a line of a 90-degree hybrid circuit or a line of a rat-race circuit.

Abstract: An acoustic wave generation unit oscillates working fluid of 35 atm or less so as to generate acoustic waves with a frequency in a range from 50 Hz or more and 500 Hz or less. A heat/acoustic wave conversion component has a partition wall of 5.0 W/mK or less between two end faces which defines a plurality of cells of 620 cells/cm2 or more and 3100 cells/cm2 or less. A heat exchanger disposed close to one end face receives heat from a first external air flowing into the heat exchanger and gives the heat to the one end face so as to flow out a cold air. Another heat exchanger disposed close to the other end face receives heat from the other end face and gives the heat to a second external air flowing into the another heat exchanger so as to flow out a warm air.

Abstract: A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N2 atmosphere at not less than 650° C. or in a N2+O2 atmosphere at not less than 500° C.

Abstract: An amplifier includes a transistor chip including a plurality of transistor cells, a gate pad, and a drain pad, a matching substrate having a surface on which a metal pattern is formed, a terminal with a width larger than a width of the transistor chip and than a width of the matching substrate, a plurality of terminal wires connecting the terminal to the metal pattern, and a plurality of chip wires connecting the metal pattern to the transistor chip. Inter-wire distances of portions of the plurality of terminal wires connected to the metal pattern are larger than inter-wire distances between portions of the plurality of terminal wires connected to the terminal.

Abstract: A heat generation system including: a liquid storage tank; a heating element including: a reaction container having a storage space, and a porous body stored in the storage space, and loaded with an exothermic reaction solid that causes an exothermic reaction when being in contact with the liquid; a liquid injection mechanism member including: a liquid flow pipe that communicates between the liquid storage tank and the storage space of the reaction container, through which the liquid flows, and an injection unit that injects the liquid into the storage space; and discharge mechanism member including: a discharge pipe that communicates with the storage space of the reaction container, and a discharge unit that discharges a liquid product generated by the exothermic reaction caused by contact between the liquid and the exothermic reaction solid, and a vaporized material of the liquid, from the storage space through the discharge pipe.

Abstract: A porous honeycomb heat storage structure including: a honeycomb structure which has a porous partition wall which defines a plurality of cells extending one end face to the other end face and allows a reaction medium to flow into the cells; and a heat storage portion which is configured by filling a heat storage material performing heat storage and heat dissipation by a reversible chemical reaction with the reaction medium or physical adsorption/desorption in at least a portion of each cells, wherein the heat storage portion has an area ratio in a range from 60% to 90% with respect to a cross sectional area of a honeycomb cross section orthogonal to an axial direction of the honeycomb structure.

Abstract: This semiconductor device is provided with a device substrate in which a semiconductor circuit including two high frequency amplifiers; a cap substrate and a sealing frame of a conductor which forms and air-tightly seals space surrounding an area, in which the semiconductor circuit is formed, between the device substrate and the cap substrate, wherein the sealing frame is configured as a line of a 90-degree hybrid circuit or a line of a rat-race circuit.

Abstract: An amplifier includes a transistor chip including a plurality of transistor cells, a gate pad, and a drain pad, a matching substrate having a surface on which a metal pattern is formed, a terminal with a width larger than a width of the transistor chip and than a width of the matching substrate, a plurality of terminal wires connecting the terminal to the metal pattern, and a plurality of chip wires connecting the metal pattern to the transistor chip. Inter-wire distances of portions of the plurality of terminal wires connected to the metal pattern are larger than inter-wire distances between portions of the plurality of terminal wires connected to the terminal.

Abstract: The thermoacoustic energy converting element part includes a plurality of through holes extending along a uniform direction to penetrate a body of the thermoacoustic energy converting element part to form traveling paths of acoustic waves. The element part includes a wall surrounding each of the through holes to extend in an extending direction of the through hole and configured to exchange heat between the fluid. The through hole includes a through hole that has a hydraulic diameter of 0.4 mm or smaller, and an open area ratio of the through holes is 60% or higher. A first layer and a second layer are alternately provided on the wall of the thermoacoustic energy converting element part along the extending direction. A porosity of the first layer is 0% or smaller than a porosity of the second layer. The thermal conductivity of the structure of the thermoacoustic energy converting element part along the extending direction is 2 W/m/K or lower.

Abstract: The thermoacoustic energy converting element part is provided with a plurality of through holes extending along a direction to penetrate the thermoacoustic energy converting element part to form travelling routes of acoustic waves. The thermoacoustic energy converting element part includes a wall surrounding each of the through holes to extend in an extending direction of the through hole and configured to exchange heat with the fluid. The through hole includes a hole that has a hydraulic diameter of 0.4 mm or smaller, and an open area ratio of the through holes in the thermoacoustic energy converting element part is 60% or higher. Thermal conductivity of the thermoacoustic energy converting element part in fluid atmosphere is 0.4 W/m/K or lower, and heat capacity of the thermoacoustic energy converting element part at 400° C. in the fluid atmosphere is higher than 0.5 J/cc/K.

Abstract: A porous honeycomb heat storage structure including: a honeycomb structure which has a porous partition wall which defines a plurality of cells extending one end face to the other end face and allows a reaction medium to flow into the cells; and a heat storage portion which is configured by filling a heat storage material performing heat storage and heat dissipation by a reversible chemical reaction with the reaction medium or physical adsorption/desorption in at least a portion of each cells, wherein the heat storage portion has an area ratio in a range from 60% to 90% with respect to a cross sectional area of a honeycomb cross section orthogonal to an axial direction of the honeycomb structure.

Abstract: An acoustic wave generation unit oscillates working fluid of 35 atm or less so as to generate acoustic waves with a frequency in a range from 50 Hz or more and 500 Hz or less. A heat/acoustic wave conversion component has a partition wall of 5.0 W/mK or less between two end faces which defines a plurality of cells of 620 cells/cm2 or more and 3100 cells/cm2 or less. A heat exchanger disposed close to one end face receives heat from a first external air flowing into the heat exchanger and gives the heat to the one end face so as to flow out a cold air. Another heat exchanger disposed close to the other end face receives heat from the other end face and gives the heat to a second external air flowing into the another heat exchanger so as to flow out a warm air.

Abstract: A heat generation system including: a liquid storage tank; a heating element including: a reaction container having a storage space, and a porous body stored in the storage space, and loaded with an exothermic reaction solid that causes an exothermic reaction when being in contact with the liquid; a liquid injection mechanism member including: a liquid flow pipe that communicates between the liquid storage tank and the storage space of the reaction container, through which the liquid flows, and an injection unit that injects the liquid into the storage space; and discharge mechanism member including: a discharge pipe that communicates with the storage space of the reaction container, and a discharge unit that discharges a liquid product generated by the exothermic reaction caused by contact between the liquid and the exothermic reaction solid, and a vaporized material of the liquid, from the storage space through the discharge pipe.

Abstract: A heat storage member including a substrate containing a SiC sintered body as a principal ingredient and a heat storage material configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and physical desorption from a reaction medium. The substrate has a three-dimensional network structure including a skeleton having porosity of 1% or less. A void ratio of a void formed in the three-dimensional network structure of the substrate is ranging from 30 to 95%. The heat storage material is disposed at least in a part of a surface of the void in the three-dimensional network structure of the substrate.

Abstract: A heat storage member including: a substrate containing a SiC sintered body as a principal ingredient; a coating layer disposed at least to a part of surface of the substrate; and a heat storage material disposed at least to a part of a surface of the coating layer and configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and by physical desorption from a reaction medium. A softening point of the coating layer is a temperature at 1000° C. or less.

Abstract: The method includes: a formed body forming step of forming each of a plurality of honeycomb-segment formed bodies by extrusion; an aggregate formation step of forming a honeycomb-segment aggregate by applying a fluid bonding material to side faces of the honeycomb-segment formed bodies, and arranging the honeycomb-segment formed bodies so that the side faces are brought into contact with each other; an aggregate shaping step of shaping the honeycomb-segment aggregate by performing a press treatment to the side faces of the honeycomb-segment aggregate; and a drying/firing step of drying and firing the honeycomb-segment aggregate, wherein the aggregate shaping step are performed while keeping the water amount of each of the honeycomb-segment formed bodies to be 30 mass % or more, each of the honeycomb segments has cell density that is 620 cells/cm2 or more, and the press treatment is performed with a contact pressure of 0.005 kg/cm2 or more.

Abstract: An exhaust system includes: an exhaust pipe defining an exhaust path of exhaust gas to atmosphere; a recirculation pipe defining a recirculation path separating a part of exhaust gas passing through the exhaust pipe and allowing the part to flow back to a power unit; a purification unit purifying exhaust gas by catalyst; and a heating device heating exhaust gas before purification to activate the purification ability of the catalyst. The heating device includes: an acoustic-wave generator generating acoustic waves by absorbing heat from exhaust gas passing through the recirculation pipe and by giving the heat to working fluid to cause the working fluid to oscillate, and a heat transfer part transferring heat of exhaust gas in the exhaust pipe passing through a downstream position from the purification unit to exhaust gas in the exhaust pipe passing through an upstream position from the purification unit by using acoustic waves.

Abstract: A semiconductor device includes: a depletion-type field-effect transistor including a gate terminal, a drain terminal and a source terminal; a group III-V heterojunction bipolar transistor including a base terminal, an emitter terminal electrically connected to the gate terminal and a collector terminal connected to same potential as that of the source terminal; a first resistor connected between the base terminal and the emitter terminal; and a second resistor connected between the base terminal and the collector terminal.

Abstract: A heat/acoustic wave conversion component having a first end face and a second end face, includes a partition wall that defines a plurality of cells extending from the first end face to the second end face, inside of the cells being filled with working fluid that oscillates to transmit acoustic waves, the heat/acoustic wave conversion component mutually converting heat exchanged between the partition wall and the working fluid and energy of acoustic waves resulting from oscillations of the working fluid. Hydraulic diameter HD of the heat/acoustic wave conversion component is 0.4 mm or less, where the hydraulic diameter HD is defined as HD=4×S/C, where S denotes a cross-sectional area of each cell perpendicular to the cell extending direction and C denotes a perimeter of the cross section, and the heat/acoustic wave conversion component has three-point bending strength of 5 MPa or more.

Abstract: A heat storage member including a substrate containing a SiC sintered body as a principal ingredient and a heat storage material configured to store and radiate heat by a reversible chemical reaction with a reaction medium or a heat storage material configured to store and radiate heat by physical adsorption to a reaction medium and physical desorption from a reaction medium. The substrate has a three-dimensional network structure including a skeleton having porosity of 1% or less. A void ratio of a void formed in the three-dimensional network structure of the substrate is ranging from 30 to 95%. The heat storage material is disposed at least in a part of a surface of the void in the three-dimensional network structure of the substrate.