Abstract: An information processing apparatus acquires pieces of normal data belonging to a plurality of intervals of measurement data measured by a device, combines the acquired pieces of normal data to generate combined data, and performs machine learning using the combined data to train a machine learning model that outputs a score indicating a normal condition of a system in which the device is installed, in response to an input of measurement data.

Abstract: A data acquisition system according to an embodiment includes an input device, a data acquisition apparatus, and a data combining apparatus. The input device includes a data measurer configured to acquire measurement data by performing measurement, generate sequence information representing a sequence of the acquired measurement data, and transmit the measurement data and the sequence information to the data acquisition apparatus. The data acquisition apparatus includes a data collector configured to, when receiving the measurement data and the sequence information, generate time information, and when failing to receive the measurement data and the sequence information, generate data loss information.

Abstract: A data acquisition system according to an embodiment includes an input device, a data acquisition apparatus, and a data combining apparatus. The input device includes a data measurer configured to acquire measurement data by performing measurement, generate sequence information representing a sequence of the acquired measurement data, and transmit the measurement data and the sequence information to the data acquisition apparatus. The data acquisition apparatus includes a data collector configured to, when receiving the measurement data and the sequence information, generate time information, and when failing to receive the measurement data and the sequence information, generate data loss information.

Abstract: A semiconductor device includes: a first semiconductor region of a first conductive type; a second semiconductor region of the first conductive type formed on an upper surface of the first semiconductor region and having a lower impurity concentration than that of the first semiconductor region; a third semiconductor region of the first conductive type formed on the upper surface of the first semiconductor region and having a higher impurity concentration than that of the second semiconductor region; and a fourth semiconductor region of a second conductive type different from the first conductive type formed on upper surfaces of the second semiconductor region and the third semiconductor region. A PN junction is formed between the second semiconductor region and third semiconductor region and the fourth semiconductor region. The second semiconductor region is formed to surround the third semiconductor region.