Abstract: A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other. A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged. The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them.

Abstract: A sputtering method uses a sputtering apparatus for forming a thin film, the sputtering apparatus comprising a pair of facing polygonal prism target holders in which a target is placed on each surface parallel to a rotation axis of a rotatable polygonal prism body. A magnetic pole group including a plurality of magnets is disposed on a back surface of each of the targets, and each of the magnetic pole groups includes magnets or yokes of different magnetic pole directions. The magnets or yokes on the back surface of each of the targets are disposed so that adjacent magnets or yokes become alternately different magnetic pole direction, and the magnets or yokes disposed on the back surfaces of the targets have polarities opposite to each other.

Abstract: A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other. A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged. The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them.

Abstract: A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other. A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged. The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them.

Abstract: A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode. Thus, the device and the method of facing target sputtering effective for each material is provided. The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other. A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged. The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them.

Abstract: A sputtering apparatus for forming a thin film includes a pair of facing polygonal prism target holders in which a target is placed on each surface which is parallel to a rotation axis of a rotatable polygonal prism body. A magnetic pole group which includes either a plurality of magnets or a magnet and a yoke is disposed on a back surface of the target, and the magnetic pole group includes magnets or yokes of different magnetic pole directions.

Abstract: A Josephson device comprises a first electrode layer of a superconducting material and containing Nb therein as a constituent element, an overlayer of a nitride of a refractory metal element provided on the first electrode layer, a barrier layer of an insulating compound that contains the metal element as a constituent element and acting as a barrier of a Josephson junction, the barrier layer being provided on the overlayer, and a second electrode layer of a superconducting material and containing Nb therein as a constituent element, the second electrode layer being provided on the barrier layer.

Abstract: A radiation detecting device comprises a substrate, a first superconductor layer formed on the substrate, a barrier layer formed on the first superconductor layer, and a second superconductor layer formed on the barrier layer, a junction formed of the first superconductor layer, the barrier layer and the second superconductor layer receiving radiation for detection thereof, the first superconductor layer being a Ta layer, the barrier layer including a TaOx layer, an AlOx layer, a HfOx layer or a ZrOx layer, and the second superconductor layer being a Ta layer. A underlayer of Nb, V, W, Hf, Zr or Ti having a lattice constant approximate to that of Ta is formed directly below the first superconductor layer. A underlayer of V, W or Ti having a lattice constant approximate to that of Ta is formed directly below the second superconductor layer. An opening is formed in the substrate and the radiation stopping layer directly below the junction, radiation being incident to the junction through the opening.