Abstract: A method for manufacturing a carbon nano tube by a CVD method includes: supplying a carbon atom to a catalyzer for forming the carbon nano tube; and controlling an amount of carbon supply with time. In this method, super saturation of the carbon atom in the catalyzer is controlled appropriately. Thus, a caulking layer is prevented from being formed on the catalyzer, and therefore, the carbon nano tube having a sufficient length is obtained.

Abstract: A carbon nanotube manufacturing method wherein a catalyst is heated in a reaction chamber while the reaction chamber is filled with argon gas containing hydrogen. When a predetermined temperature is reached in the reaction chamber, the reaction chamber is evacuated. Then a raw material gas as a carbon source is charged and sealed in the reaction chamber whereupon the synthesis of carbon nanotube begins. Subsequently, when a condition in which the synthesis of carbon nanotubes has proceeded to a predetermined level is detected, gases in the reaction chamber are exhausted. Then, the raw material gas is changed and sealed in the reaction tube again. Thereafter, the charging (synthesizing) operation and the exhausting operation are repeated until the carbon nanotube with a desired film thickness are synthesized. A carbon nanotube manufacturing apparatus is also disclosed.

Abstract: A carbon nanotube manufacturing method wherein a catalyst is heated in a reaction chamber while the reaction chamber is filled with argon gas containing hydrogen. When a predetermined temperature is reached in the reaction chamber, the reaction chamber is evacuated. Then a raw material gas as a carbon source is charged and sealed in the reaction chamber whereupon the synthesis of carbon nanotube begins. Subsequently, when a condition in which the synthesis of carbon nanotubes has proceeded to a predetermined level is detected, gases in the reaction chamber are exhausted. Then, the raw material gas is changed and sealed in the reaction tube again. Thereafter, the charging (synthesizing) operation and the exhausting operation are repeated until the carbon nanotube with a desired film thickness are synthesized.

Abstract: A method for manufacturing a carbon nano tube by a CVD method includes: supplying a carbon atom to a catalyzer for forming the carbon nano tube; and controlling an amount of carbon supply with time. In this method, super saturation of the carbon atom in the catalyzer is controlled appropriately. Thus, a caulking layer is prevented from being formed on the catalyzer, and therefore, the carbon nano tube having a sufficient length is obtained.

Abstract: The principal surface of a p-type SiC substrate (1) is formed of a face intersecting (0001) Si-face at 10 to 16°. An n+ source region (2) and an n+ drain region (3) are formed in a surface layer portion at the principal surface of the p-type SiC substrate (1) so as to be separated from each other. A gate electrode (5) is formed on a gate oxide film (4) on the principal surface of the p-type SiC substrate (1).

Abstract: The principal surface of a p-type SiC substrate (1) is formed of a face intersecting (0001) Si-face at 10 to 16°. An n+ source region (2) and an n+ drain region (3) are formed in a surface layer portion at the principal surface of the p-type SiC substrate (1) so as to be separated from each other. A gate electrode (5) is formed on a gate oxide film (4) on the principal surface of the p-type SiC substrate (1).

Abstract: In a process of producing a SiC device, a Si layer is formed on the surface of a SiC substrate, and the Si layer is removed from the surface of the SiC substrate by supplying oxygen gas to the Si layer in a high ambient temperature and a low ambient pressure. The pressure is set at 1×10−2 to 1×10−6 Pa. Thus a cleaned surface of the SiC substrate, not contaminated by carbon and the like in atmospheric air, can be provided. Preferably, the oxygen pressure and temperature are set at about 10−6 Pa and 1000° C. for removing the Si layer. Thereafter, the oxygen is further supplied to raise the pressure to about 104 Pa to form an oxide film on the cleaned SiC substrate. Thus, the SiC substrate is cleaned and then formed with the oxide layer in the same chamber by changing the ambient pressure but without changing the ambient temperature.

Abstract: In a process of producing a SiC device, a Si layer is formed on the surface of a SiC substrate, and the Si layer is removed from the surface of the SiC substrate by supplying oxygen gas to the Si layer in a high ambient temperature and a low ambient pressure. The pressure is set at 1×10−2 to 1×10−6 Pa. Thus a cleaned surface of the SiC substrate, not contaminated by carbon and the like in atmospheric air, can be provided. Preferably, the oxygen pressure and temperature are set at about 10−6 Pa and 1000° C. for removing the Si layer. Thereafter, the oxygen is further supplied to raise the pressure to about 104 Pa to form an oxide film on the cleaned SiC substrate. Thus, the SiC substrate is cleaned and then formed with the oxide layer in the same chamber by changing the ambient pressure but without changing the ambient temperature.

Abstract: An electrode for semiconductor devices, which can restrain the occurrence of Al voids and has a high barrier effect, is obtained by inserting a material which has a close resemblance in crystal structure to the barrier layer of a contact part and the aluminum alloy with the crystal surface thereof being oriented mainly at the (111) plane into the interface between the above barrier layer and the aluminum alloy. A semiconductor device according to the present invention comprises a silicon substrate, an interlayer insulating film partially formed on the silicon substrate, a titanium silicide layer formed on the silicon substrate at the part where the interlayer insulating film is not formed, a titanium layer formed on the interlayer insulating film and connected to the titanium silicide layer, a titanium nitride layer formed on the titanium layer and the titanium silicide layer, a Ti--Al--N layer such as Ti.sub.3 AlN and formed on the titanium nitride layer, and an aluminum alloy (Al-1%Si-0.

Abstract: A method for forming an ultrafine particle film of compound includes the steps of evacuating a vessel provided with an evaporation source in its bottom portion, by which a material to be evaporated is retained, and a base plate in its upper portion, on which ultrafine particles of compound are to be deposited, supplying a reactive gas into the evacuated vessel, evaporating the retained material by heating the evaporation source and making the material interact with the reactive gas to form ultrafine particles of compound and depositing the formed ultrafine particles of compound on the base plate. The reactive gas is directly supplied to an interaction area adjacent to the evaporation source, in which the evaporated material concentrically exists.

Abstract: An ignition device for use with internal combustion engines is adapted for conducting a light beam into the combustion chamber of the engine to ignite a fuel-air mixture. The ignition device includes a light emission apparatus opened to the combustion chamber to emit a light beam into the chamber, and a particle supply apparatus disposed in opposed relation with the light emission apparatus for supplying into the combustion chamber particles of a high light absorption index separately from the fuel-air mixture. The particles from the particle supply apparatus are emitted along the optical axis of the light beam into the combustion chamber and are heated at a position suitable for ignition of the fuel-air mixture within the combustion chamber to serve as an ignition source.

Abstract: An ignition apparatus for an internal combustion engine comprises an intake path supplying a mixture of air and fuel into the combustion chamber of the engine, a particle supplying unit having an ejection port opening into the combustion chamber for supplying minute particles of a material which is not the fuel and has a high light absorption factor, and a light source radiating a laser beam through a light focusing unit toward a suitably selected position in the internal space of the combustion chamber, so that the laser beam can strike the minute particles of high light absorption factor supplied from the particle supplying unit thereby producing a torch for igniting the air-fuel mixture.

Abstract: A laser ignition apparatus includes a laser oscillator which generates at least two successive pulse-shaped laser beams during each compression stroke of the engine. A first pulse-shaped laser beam is generated by a Q switching action of the laser oscillator and thus has a high peak output and a second pulse-shaped laser beam is generated without the Q switching action and has a low peak output but a larger pulse duration than the first laser beam. The first and second pulse-shaped laser beams are guided and directed into the combustion chamber of the engine and the first laser beam of a high energy density causes the breakdown of the air-fuel mixture in the combustion chamber to develop a plasma and the second laser beam further increases the energy of the plasma thereby to ensure the setting fire of the air-fuel mixture.