Abstract: A non oriented electrical steel sheet consists of a silicon steel sheet and an insulation coating. The silicon steel sheet includes an internally oxidized layer containing SiO2 in a surface thereof, an average thickness of the internally oxidized layer is 0.10 to 5.0 ?m, and a Vickers hardness in the internally oxidized layer is 1.15 to 1.5 times as compared with a Vickers hardness in a thickness central area.

Abstract: A drive circuit includes: first and second P-channel MOS transistors connected with a first voltage; a first N-channel MOS transistor connected between the first P-channel MOS transistor and a ground voltage, and having a gate connected with a first node and configured to receive a first input signal; and a second N-channel MOS transistor connected between the second P-channel MOS transistor and the ground voltage and having a gate connected with a second node and configured to receive a second input signal. An output P-channel MOS transistor is connected between the first voltage and an output node and has a gate connected with the second node, and an output N-channel MOS transistor is connected between the output node and the second voltage and has a gate supplied with an input signal having a same polarity as that of the first input signal. A P-channel MOS transistor has a source connected with the first node, a drain connected with the output node, and a gate connected with the second node.

Abstract: A drive circuit includes: first and second P-channel MOS transistors connected with a first voltage; a first N-channel MOS transistor connected between the first P-channel MOS transistor and a ground voltage, and having a gate connected with a first node and configured to receive a first input signal; and a second N-channel MOS transistor connected between the second P-channel MOS transistor and the ground voltage and having a gate connected with a second node and configured to receive a second input signal. An output P-channel MOS transistor is connected between the first voltage and an output node and has a gate connected with the second node, and an output N-channel MOS transistor is connected between the output node and the second voltage and has a gate supplied with an input signal having a same polarity as that of the first input signal. A P-channel MOS transistor has a source connected with the first node, a drain connected with the output node, and a gate connected with the second node.

Abstract: In a method of testing an electrode structure in which a plurality of electrodes are arranged in a matrix, a test unit is positioned at a position of a target one of the plurality of electrodes apart from the target electrode by a preset distance. The test unit has a MISFET having a source, a gate and a drain. Then, a first voltage is applied to the target electrode such that a gate voltage is induced at the gate by electrostatic induction. Also, a second voltage is applied to at least one of the source and the drain such that current flows between the source and the drain based on the gate voltage. Then, a value of the current is examined to determine an electrical connection state of the target electrode.

Abstract: In a method of testing an electrode structure in which a plurality of electrodes are arranged in a matrix, a test unit is positioned at a position of a target one of the plurality of electrodes apart from the target electrode by a preset distance. The test unit has a MISFET having a source, a gate and a drain. Then, a first voltage is applied to the target electrode such that a gate voltage is induced at the gate by electrostatic induction. Also, a second voltage is applied to at least one of the source and the drain such that current flows between the source and the drain based on the gate voltage. Then, a value of the current is examined to determine an electrical connection state of the target electrode.

Abstract: A potential sensor, includes a field effect transistor, a power supply and a switching device. The power supply supplies a direct current voltage to a gate electrode of the field effect transistor. The switching device switches between connecting the gate electrode to the power supply and disconnecting the gate electrode from the power supply. When the gate electrode is connected to the power supply, the field effect transistor is in action. When the gate electrode is disconnected from the power supply, the field effect transistor is in action.

Abstract: A potential sensor, includes a field effect transistor, a power supply and a switching device. The power supply supplies a direct current voltage to a gate electrode of the field effect transistor. The switching device switches between connecting the gate electrode to the power supply and disconnecting the gate electrode from the power supply. When the gate electrode is connected to the power supply, the field effect transistor is in action. When the gate electrode is disconnected from the power supply, the field effect transistor is in action.

Abstract: In a method of testing an electrode structure in which a plurality of electrodes are arranged in a matrix, a test unit is positioned at a position of a target one of the plurality of electrodes apart from the target electrode by a preset distance. The test unit has a MISFET having a source, a gate and a drain. Then, a first voltage is applied to the target electrode such that a gate voltage is induced at the gate by electrostatic induction. Also, a second voltage is applied to at least one of the source and the drain such that current flows between the source and the drain based on the gate voltage. Then, a value of the current is examined to determine an electrical connection state of the target electrode.

Abstract: A system for monitoring an operating condition of a control rod drive mechanism (CRDM) having a pressure housing erectly mounted on a reactor vessel head closure, a vertically movable control rod drive shaft accommodated in the housing and an electromagnetically motive latch mechanism includes an accelerometer fitted to a housing upper end and signal recording means for receiving output signals from the accelerometer through signal processing means and recording the processed output signals.

Abstract: An improved position detecting apparatus for detecting the position of an underwater moving body loaded with an inspecting device is provided. The apparatus is such that it makes it possible to perform inspection of a structure in water quickly, reliably and with high precision. The improvements reside in that the apparatus comprises a light source and a corner cube mounted on the underwater moving body in combination to serve as a target, a follower device, which includes a visual sensor for catching light emitted from the light source, for automatically following the target, an underwater argon laser length measuring instrument for measuring a distance between a length measuring head integrated with the visual sensor and the corner cube, and a detector device for detecting the position of the underwater moving body on the basis of an azimuth angle of the target obtained by the follower device, a reference of one side of a triangle and the measured distance.