Patents by Inventor Shinichi Nagahama

Shinichi Nagahama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200169057
    Abstract: A light emitting device includes a base; a plurality of semiconductor laser elements disposed on the base and configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member disposed on the base and configured to reflect light from the semiconductor laser elements; a surrounding part disposed on the base and surrounding the semiconductor laser elements and the reflecting member; a wiring part disposed on the base so as to extend to a location outside of the surrounding part; a radiating body disposed on the surrounding part and having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member.
    Type: Application
    Filed: January 29, 2020
    Publication date: May 28, 2020
    Applicant: NICHIA CORPORATION
    Inventors: Kazuma KOZURU, Shinichi NAGAHAMA
  • Patent number: 10661538
    Abstract: An object of the present invention is to provide a decorative sheet excellent in post-processability and usable for flame-retardant application. A decorative sheet (1) according to one aspect of the present invention includes a plurality of resin layers. At least one layer of the resin layers is formed of a uniaxially stretched resin sheet (3) or a biaxially stretched resin sheet (3) constituted of a thermoplastic resin composition. The thermoplastic resin composition is produced by adding an inorganic pigment vesicle to a polyolefin-based resin. The inorganic pigment vesicle is produced by including an inorganic pigment in a vesicle having a monolayer outer membrane. The uniaxially stretched resin sheet (3) and the biaxially stretched resin sheet (3) have a value of a dichroic ratio R of R?0.3.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: May 26, 2020
    Assignee: TOPPAN PRINTING CO., LTD.
    Inventors: Shinichi Miyamoto, Masamitsu Nagahama, Akira Sato, Masatoshi Takahashi
  • Patent number: 10587091
    Abstract: A light emitting device includes a base; a plurality of semiconductor laser elements that are disposed on the base and that are configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member that is disposed on the base and configured to reflect light from the plurality of semiconductor laser elements; a surrounding part that is disposed on the base and that surrounds the plurality of semiconductor laser elements and the reflecting member; a wiring part that is disposed on the base so as to extend to a location outside of the surrounding part, the wiring part being electrically connected to the plurality of semiconductor laser elements; a radiating body disposed on the surrounding part, the radiating body comprising at least one of a metal and a ceramic, and the radiating body having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light t
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: March 10, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Kazuma Kozuru, Shinichi Nagahama
  • Publication number: 20180358776
    Abstract: A light emitting device includes a base; a plurality of semiconductor laser elements that are disposed on the base and that are configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member that is disposed on the base and configured to reflect light from the plurality of semiconductor laser elements; a surrounding part that is disposed on the base and that surrounds the plurality of semiconductor laser elements and the reflecting member; a wiring part that is disposed on the base so as to extend to a location outside of the surrounding part, the wiring part being electrically connected to the plurality of semiconductor laser elements; a radiating body disposed on the surrounding part, the radiating body comprising at least one of a metal and a ceramic, and the radiating body having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light t
    Type: Application
    Filed: August 14, 2018
    Publication date: December 13, 2018
    Applicant: NICHIA CORPORATION
    Inventors: Kazuma Kozuru, Shinichi Nagahama
  • Patent number: 10079470
    Abstract: A light emitting device includes: a base; at least one semiconductor laser element disposed on the base and configured to emit light laterally; a reflecting member that is disposed on the base; a surrounding part that is disposed on the base and that surrounds the at least one semiconductor laser element and the reflecting member; a wiring part that is electrically connected to the at least one semiconductor laser element and that is disposed on an upper surface of the base so as to extend laterally to a location on the upper surface of the base that is laterally outside of the surrounding part; a radiating body disposed on the surrounding part, the radiating body comprising at least one of a metal and a ceramic, and the radiating body having an opening; and a wavelength converting member that is located in the opening of the radiating body.
    Type: Grant
    Filed: April 17, 2015
    Date of Patent: September 18, 2018
    Assignee: NICHIA CORPORATION
    Inventors: Kazuma Kozuru, Shinichi Nagahama
  • Patent number: 9720310
    Abstract: Provided is a high-emission light source device which is capable of obtaining a desired color tone of red light and can be mounted on a small projector. A light source device includes a first light source for emitting a red light, a second light source for emitting a light different from the red light, a fluorescent member for emitting a light containing a red light component and a light component other than the red light component upon receiving the light emitted from the second light source, and a filter for transmitting or reflecting the red light component of the light emitted from the fluorescent member.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: August 1, 2017
    Assignee: NICHIA CORPORATION
    Inventors: Takafumi Sugiyama, Shinichi Nagahama
  • Publication number: 20150338727
    Abstract: Provided is a high-emission light source device which is capable of obtaining a desired color tone of red light and can be mounted on a small projector. A light source device includes a first light source for emitting a red light, a second light source for emitting a light different from the red light, a fluorescent member for emitting a light containing a red light component and a light component other than the red light component upon receiving the light emitted from the second light source, and a filter for transmitting or reflecting the red light component of the light emitted from the fluorescent member.
    Type: Application
    Filed: May 22, 2015
    Publication date: November 26, 2015
    Applicant: Nichia Corporation
    Inventors: Takafumi SUGIYAMA, Shinichi NAGAHAMA
  • Publication number: 20150303648
    Abstract: A light emitting device includes a base; a plurality of semiconductor laser elements that are disposed on the base and that are configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member that is disposed on the base and configured to reflect light from the plurality of semiconductor laser elements; a surrounding part that is disposed on the base and that surrounds the plurality of semiconductor laser elements and the reflecting member; a wiring part that is disposed on the base so as to extend to a location outside of the surrounding part, the wiring part being electrically connected to the plurality of semiconductor laser elements; a radiating body disposed on the surrounding part, the radiating body comprising at least one of a metal and a ceramic, and the radiating body having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light t
    Type: Application
    Filed: April 17, 2015
    Publication date: October 22, 2015
    Applicant: NICHIA CORPORATION
    Inventors: Kazuma KOZURU, Shinichi Nagahama
  • Patent number: 8908740
    Abstract: A light emitting device, comprises: a light source that emits excitation light; a light guide that propagates the excitation light, and in which the refractive index of the center part (core) of a cross section is higher than the refractive index of the peripheral part (cladding); a wavelength conversion member that absorbs the excitation light propagated by the light guide and converts the wavelength thereof, and releases light of a predetermined wavelength band; and a shielding member that blocks the wavelength of at least part of the excitation light and the light emitted from the wavelength conversion member.
    Type: Grant
    Filed: February 6, 2007
    Date of Patent: December 9, 2014
    Assignee: Nichia Corporation
    Inventors: Shinichi Nagahama, Atsutomo Hama, Takafumi Sugiyama, Tomohisa Kishimoto
  • Patent number: 8872203
    Abstract: In a semiconductor light-emitting device, light from a laser diode is output to the outside after the luminance of the light being enhanced. It includes a support body provided with lead terminals, one or more laser diodes mounted on the support body, a cylindrical reflector fixed to the support body to surround the laser diode(s) and provided with a light reflection surface formed on an inner surface thereof, and a cap placed to cover an opening distal end face of the reflector and held at an opening distal end part of the reflector, the cap being provided at a central part thereof with a solid fluorescent member including a fluorescent substance that is excited by the light from the laser diode and emits light different in colors from light emitted by the laser diode.
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: October 28, 2014
    Assignee: Nichia Corporation
    Inventors: Shinichi Nagahama, Atsutomo Hama, Takafumi Sugiyama, Yukihiro Hayashi, Naoto Morizumi, Yoshinori Murazaki
  • Patent number: 8541794
    Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: September 24, 2013
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
  • Patent number: 8304790
    Abstract: A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: November 6, 2012
    Assignee: Nichia Corporation
    Inventors: Shuji Nakamura, Shinichi Nagahama, Naruhito Iwasa
  • Patent number: 8197111
    Abstract: A light emitting device includes an excitation light source that emits excitation light, a wavelength conversion member, a light guide, and a light guide distal end member. The wavelength conversion member absorbs the excitation light emitted from the excitation light source, converts its wavelength, and releases light of a predetermined wavelength band. The light guide in which the center part (core) of its cross section has a refractive index that is higher than the refractive index of the peripheral portion (cladding) guides the excitation light emitted from the excitation light source to the wavelength conversion member. The light guide distal end member supports a distal end of the light guide on the wavelength conversion member side. The light guide distal end member is formed from a material that reflects the excitation light and/or the light that has undergone wavelength conversion.
    Type: Grant
    Filed: June 11, 2010
    Date of Patent: June 12, 2012
    Assignee: Nichia Corporation
    Inventors: Atsutomo Hama, Tomotaka Honda, Shinichi Nagahama, Junji Takeichi, Yoshinori Murazaki, Hiroto Tamaki, Yukihiro Hayashi
  • Patent number: 8030665
    Abstract: A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: October 4, 2011
    Assignee: Nichia Corporation
    Inventors: Shinichi Nagahama, Masahiko Sano, Tomoya Yanamoto, Keiji Sakamoto, Masashi Yamamoto, Daisuke Morita
  • Publication number: 20100254153
    Abstract: A light emitting device includes an excitation light source that emits excitation light, a wavelength conversion member, a light guide, and a light guide distal end member. The wavelength conversion member absorbs the excitation light emitted from the excitation light source, converts its wavelength, and releases light of a predetermined wavelength band. The light guide in which the center part (core) of its cross section has a refractive index that is higher than the refractive index of the peripheral portion (cladding) guides the excitation light emitted from the excitation light source to the wavelength conversion member. The light guide distal end member supports a distal end of the light guide on the wavelength conversion member side. The light guide distal end member is formed from a material that reflects the excitation light and/or the light that has undergone wavelength conversion.
    Type: Application
    Filed: June 11, 2010
    Publication date: October 7, 2010
    Applicant: NICHIA CORPORATION
    Inventors: Atsutomo HAMA, Tomotaka HONDA, Shinichi NAGAHAMA, Junji TAKEICHI, Yoshinori MURAZAKI, Hiroto TAMAKI, Yukihiro HAYASHI
  • Patent number: 7758224
    Abstract: A light emitting device, comprises: an excitation light source that emits excitation light; a wavelength conversion member that absorbs the excitation light emitted from the excitation light source, converts its wavelength, and releases light of a predetermined wavelength band; a light guide in which the center part (core) of its cross section has a refractive index that is higher than the refractive index of the peripheral portion (cladding), and which guides the light emitted from the wavelength conversion member to the outside; and wherein the wavelength conversion member is produced by laminating a plurality of layers that wavelength-convert different wavelengths of light.
    Type: Grant
    Filed: September 28, 2005
    Date of Patent: July 20, 2010
    Assignee: Nichia Corporation
    Inventors: Atsutomo Hama, Tomotaka Honda, Shinichi Nagahama, Junji Takeichi, Yoshinori Murazaki, Hiroto Tamaki, Yukihiro Hayashi
  • Publication number: 20100025657
    Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
    Type: Application
    Filed: September 30, 2009
    Publication date: February 4, 2010
    Inventors: Shinichi NAGAHAMA, Masayuki Senoh, Shuji Nakamura
  • Patent number: 7615804
    Abstract: A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
    Type: Grant
    Filed: January 3, 2005
    Date of Patent: November 10, 2009
    Assignee: Nichia Chemical Industries, Ltd.
    Inventors: Shinichi Nagahama, Masayuki Senoh, Shuji Nakamura
  • Patent number: 7557985
    Abstract: A light emitting device includes a first unit having a first excitation light source including a laser element emitting blue wavelength band excitation light, and a first wavelength converting member including at least one type of fluorescent material and which absorbs at least a portion of a first excitation light, converts the wavelength, and releases light with a wavelength longer than the first excitation light, and a second unit having a second excitation light source including a laser element which emits excitation light with a wavelength band shorter than the blue wavelength band excitation light, and a second wavelength converting member which includes at least one type of fluorescent material and which absorbs at least a portion of a second excitation light, converts the wavelength, and releases light with a wavelength longer than the second excitation light. The first unit and the second unit are combined using a bundle fiber.
    Type: Grant
    Filed: April 21, 2008
    Date of Patent: July 7, 2009
    Assignee: Nichia Corporation
    Inventors: Atsutomo Hama, Shinichi Nagahama, Yukihiro Hayashi
  • Patent number: 7496124
    Abstract: A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 ?m and the etching depth is below the thickness of the p-side cladding layer of 0.1 ?m and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 ?m, an aspect ratio is improved in far field image.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: February 24, 2009
    Assignee: Nichia Corporation
    Inventors: Tokuya Kozaki, Masahiko Sano, Shuji Nakamura, Shinichi Nagahama