Abstract: A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

Abstract: A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

Abstract: A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

Abstract: A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

Abstract: A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

Abstract: A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the water, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edges of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

Abstract: A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

Abstract: Disclosed is a method to achieve the planarization of a BPSG film and reduction of micro-scratches on a BPSG film by the CMP method. A BPSG film is deposited over a main surface of a substrate on which MISFETs have been formed, and then, a surface of the BPSG film is planarized by the CMP method. Thereafter, a thermal treatment is performed to the substrate to reflow the BPSG film, thereby removing the micro-scratches on the surface of the BPSG film caused by the polishing. At this time, the amount of polishing of the surface of the BPSG film is controlled within a range of 90 to 300 nm, preferably 100 to 250 nm, and more preferably 120 to 200 nm.

Abstract: For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface of individual wafers running through a mass-production process so as to suppress the occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a container for at least 30 days or more, preferably 40 days or more, and more preferably 50 days or more, so that the concentration of coagulated particles having a size of 1 &mgr;m or more is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.

Abstract: For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface to be processed of individual wafers running through a mass-production process so as to suppress occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a condition filled in a container for at least 30 days or over, preferably 40 days or over, and more preferably 50 days or over so that the concentration of coagulated particles having a size of 1 &mgr;m or over is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.

Abstract: A fabrication method of a semiconductor integrated circuit device including polishing the entire area of an edge of a wafer, for example, by using three polishing drums in which a polishing drum polishes the upper surface of the edge of the water relatively, the polishing drum polishes the central portion of the edge of the wafer relatively and a polishing drum polishes the lower surface of the edge of the wafer relatively, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

Abstract: In the manufacturing method, micro scratches are detected without performing a breakdown inspection on wafers flowing through a mass production process. The method comprises: forming an insulating film on main surfaces of a plurality of first wafers which flow through a mass-production process; preparing a dummy wafer for monitoring, on which a silicon-oxide-based insulating film is formed; performing chemical mechanical polishing on the insulating films respectively formed on main surfaces of the plurality of first wafers and the dummy wafer; performing etching on the insulating film of the dummy wafer with use of a solution containing hydrofluoric acid, after the step of performing the chemical mechanical polishing; and measuring a number of scratches on the insulating film of the dummy wafer subjected to the etching.

Abstract: In the manufacturing method, micro scratches are detected without performing a breakdown inspection on wafers flowing through a mass production process.

Abstract: For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface to be processed of individual wafers running through a mass-production process so as to suppress occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a condition filled in a container for at least 30 days or over, preferably 40 days or over, and more preferably 50 days or over so that the concentration of coagulated particles having a size of 1 &mgr;m or over is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.