Abstract: There are provided a therapeutic preparation for anxiety neurosis or depression which comprises a MC4 receptor antagonist as an effective ingredient; and a piperazine derivative represented by Formula [1]: [wherein Ar1 is a phenyl group, a substituted phenyl group, a naphthyl group or a substituted naphthyl group; Ar2 is a naphthyl group, a substituted naphthyl group, a quinolyl group, a group represented by the formula: (wherein R4 is a hydrogen atom or a halogen atom; and X—Y is CH—NH, CH—O, CH—S or N—O) or a group represented by the formula: (wherein R5 is a hydrogen atom, a hydroxyl group or a C1-10 alkoxy group); R1 is a hydrogen atom, a C1-10 alkyl group, a C3-8 cycloalkyl group, a C3-10 alkenyl group, a phenyl group, a 1-cyanoethyl group, a pyrimidin-2-yl group or an amidyl group; R2 and R3 are the same or different, and are each a hydrogen atom or a C1-10 alkyl group; A-B is N—CH2, CH—CH2, C(OH)—CH2 or C?CH; T1 is a single bond, —N(R6)— (wherein R6 is a hydrogen atom or a C1-10 alkyl group

Abstract: There are provided a therapeutic preparation for anxiety neurosis or depression which comprises a MC4 receptor antagonist as an effective ingredient; and a piperazine derivative represented by Formula [1]: 1

Abstract: A photocatalyst is carried on a surface of a light guiding body for guiding light needed to activate the photocatalyst in such a manner the light guided by the light guiding body irradiates directly from the surface of the light guiding body the photocatalyst.

Abstract: A magnetic recording medium comprised of (i) a non-magnetic substrate such as glass or carbon, (ii) a silicon layer preferably having a thickness of about 20-3,000 angstroms, formed on the substrate, (iii) a layer composed of at least one element of the platinum group of the periodic table or its alloy or carbon, formed on the silicon layer, wherein the platinum group element or alloy is at least partially silicified with silicon diffusing from the adjacent silicon layer, and the carbon is rendered at least partially amorphous with silicon diffusing from the adjacent silicon layer, (iv) an undercoat composed of chromium or its alloy, formed on the layer of a platinum group element or alloy or carbon, (v) a magnetic layer composed of a cobalt alloy, formed on the undercoat, (vi) a protective carbon overcoat formed on the magnetic layer, and (vii) an optional lubricating layer formed on the protective overcoat.

Abstract: A magnetic recording medium comprised of (i) a non-magnetic substrate such as glass or carbon, (ii) a silicon layer preferably having a thickness of about 20-3,000 angstroms, formed on the substrate, (iii) a layer composed of at least one element of the platinum group of the periodic table or its alloy or carbon, formed on the silicon layer, wherein the platinum group element or alloy is at least partially silicified with silicon diffusing from the adjacent silicon layer, and the carbon is rendered at least partially amorphous with silicon diffusing from the adjacent silicon layer, (iv) an undercoat composed of chromium or its alloy, formed on the layer of a platinum group element or alloy or carbon, (v) a magnetic layer composed of a cobalt alloy, formed on the undercoat, (vi) a protective carbon overcoat formed on the magnetic layer, and (vii) an optional lubricating layer formed on the protective overcoat.

Abstract: A magnetic recording medium having an improved CSS characteristics is made by a process including a surface texture treatment step of either (1) focusing an ultraviolet laser beam in a ring-shaped band, or (2) focusing a pulsed ultraviolet laser beam at an energy density of at least 0.01 J/cm.sup.2 but lower than the threshold level successively at least two times but up to 1,000 times, on a substrate composed of glass or silicon, followed by the formation of an undercoat, a magnetic layer, and a protective coating in this order on the surface-textured substrate.

Abstract: A method of obtaining a multilayer semiconductor device by forming a semiconductor crystallized layer through an insulative material over a semiconductor substrate in which a semiconductor device is formed. The insulative material is formed on the semiconductor substrate in which the semiconductor device is fabricated and a first semiconductor layer is formed on the insulative material. Thereafter, the surface of the first semiconductor layer is planarized and an insulative material is formed on this planarized surface, then a second semiconductor layer is formed on this insulative material. Next, the second semiconductor layer is crystallized by the irradiation of an energy beam, thereby fabricating a device in the second crystallized semiconductor layer.

Abstract: Formation of well-regions of a conductivity type opposite to that of a substrate is achieved in such a manner to determine a first threshold voltage level. Ion implantation is effected on desirably selected gates in the respective channels formed on the substrate and the well-regions. Two channels on the ion implanted substrate and on the well-region in which the ion implantation is not effected, are coupled to form a complementary-MOS transistor pair having a first threshold voltage level. The channels on the substrate in which the ion implantation is not effected and on the ion implanted well-region are coupled to form another complementary-MOS transistor pair having a second threshold voltage level.