Abstract: An example acoustic wave device includes a wiring substrate, a device chip flip-chip bonded on the wiring substrate via a plurality of bumps, a metal pattern formed on an outer edge portion of the wiring substrate, the metal pattern includes an uneven portion or a jagged portion, a plurality of bump pads formed on the wiring substrate comprises an antenna pad, a transmitting pad, a receiving pad and a ground pad, a sealing resin member bonded to both the metal pattern and the wiring substrate, the sealing resin member hermetically seals the device chip, a region which is a tip direction of the uneven portion or the jagged portion formed to orient toward the outer edge of the wiring substrate, a region which is the tip direction of the uneven portion or the jagged portion formed to orient toward a center of the wiring substrate, and a surface acoustic wave resonator formed on the device chip and disposed in the vicinity of the first region or the second region.

Abstract: A ladder-type filter includes a plurality of series arms and a plurality of parallel arms, in which one of the parallel arms does not have resonance characteristic is arranged in parallel between two series arm resonators of the plurality of series arms. The ladder-type filter may be included in a duplexer and/or a module.

Abstract: An acoustic wave device includes a wiring substrate, a wiring substrate-side wiring formed on the wiring board, a chip substrate opposed to the wiring substrate, a chip substrate-side wiring formed on the chip substrate, a plurality of resonators formed on the chip substrate and electrically connected to the chip substrate-side wiring, a plurality of bumps electrically connected to the wiring substrate-side wiring and the chip substrate-side wiring, and a heat dissipation bump bonded to a region of the chip board-side wiring electrically connected to a plurality of resonators and insulated from the wiring substrate-side wiring.

Abstract: An acoustic wave device includes series resonators and parallel resonators formed on a main surface of a piezoelectric layer. The series resonators includes a first series resonator including first, second and third series-divided resonators and a second series resonator including fourth, fifth and sixth series-divided resonators. One of the first, second and third series-divided resonators which is disposed at a position where an electric signal is input first, has a first anti-resonance frequency. The others of the first, second and third series-divided resonators have a second anti-resonance frequency. One of the fourth, fifth and sixth series-divided resonators which is centrally disposed has the second anti-resonance frequency, the others of the fourth, fifth, and sixth series-divided resonators have the first anti-resonance frequency.

Abstract: A semiconductor substrate includes a silicon carbide substrate, a first nitride film in contact with the upper surface of the silicon carbide substrate, a second nitride film in contact with an upper surface of the first nitride film, and a silicon oxide film in contact with the upper surface of the second nitride film. The first nitride layer is more nitrogen-rich than the second nitride layer.

Abstract: An acoustic wave device includes: a wiring substrate; a device chip mounted on the wiring substrate; a photocurable resin film disposed so as to surround an air gap between the wiring substrate and the device chip; a ceramics layer formed so as to cover the photocurable resin film; and a sealing portion covering the ceramics layer.