Abstract: Provided is a semiconductor laser device enabling efficient emission of a laser beam without damaging a light emitting surface of a light emitting element. Semiconductor laser device includes light emitting element, optical element, first heat radiation part, and second heat radiation part. Laser beam emitted from light emitting element enters optical element. First heat radiation part is connected to light emitting element. Second heat radiation part is connected to light emitting element. First heat radiation part includes first recess. Second heat radiation part includes second recess. One end of optical element is fitted into first recess, and the other end of optical element is fitted into second recess.

Abstract: A semiconductor light emitting device includes a substrate, and an array including three or more light emitting elements which are aligned above and along a main surface of a substrate and each emit light. The light emitting elements each include a clad layer of a first conductivity type, an active layer containing In, and a clad layer of a second conductivity type disposed above the substrate sequentially from the substrate. Among the light emitting elements, the compositional ratio of In in the active layer is smaller in the light emitting element located in a central area in an alignment direction than that in the light emitting elements located in both end areas in the alignment direction.

Abstract: A semiconductor laser device includes: a first semiconductor layer of a first conductivity type; a light emitting layer formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the light emitting layer; and an electrode formed above a ridge portion formed in the second semiconductor layer. The electrode is divided at positions at which an integrated value of light intensities of higher-order mode oscillation has a local maximum.

Abstract: A semiconductor laser device includes: a first semiconductor layer of a first conductivity type; a light emitting layer formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the light emitting layer; and an electrode formed above a ridge portion formed in the second semiconductor layer. The electrode is divided at positions at which an integrated value of light intensities of higher-order mode oscillation has a local maximum.

Abstract: A semiconductor light emitting device includes a substrate, and an array including three or more light emitting elements which are aligned above and along a main surface of a substrate and each emit light. The light emitting elements each include a clad layer of a first conductivity type, an active layer containing In, and a clad layer of a second conductivity type disposed above the substrate sequentially from the substrate. Among the light emitting elements, the compositional ratio of In in the active layer is smaller in the light emitting element located in a central area in an alignment direction than that in the light emitting elements located in both end areas in the alignment direction.

Abstract: Provided is a semiconductor laser element including: a substrate; and a laser array section located above the substrate and having a plurality of light emitting parts which are arranged next to each other and which emit laser beams, wherein when the wavelengths of the laser beams respectively emitted from the plurality of light emitting parts are plotted in correspondence with the positions of the plurality of light emitting parts, among a plurality of points respectively corresponding to the wavelengths plotted, the point with an extreme value is not located at a position corresponding to the center of the laser array section and is located at a position corresponding to a place separated from the center of the laser array section.

Abstract: An optical irradiation apparatus includes: a light-emitting device configured to emit a plurality of light beams whose optical axes extend in a substantially identical direction; a collimator part configured to convert the light beams into parallel light beams; and a light condensing part configured to collect the parallel light beams. The light-emitting device includes a super luminescent diode array in which a plurality of waveguides are provided on a substrate. Each of the waveguides has a light-emitting facet including a light emission point from which an associated one of the light beams is emitted. The light emission points are located in a plane. The plane including the light emission points is orthogonal to a direction of an optical axis of the collimator part.

Abstract: An optical element includes a phosphor layer containing a phosphor which is excited by light of a first wavelength and radiates light of a second wavelength different from the first wavelength, a first optical member provided on a first surface of the phosphor layer and configured to concentrate light in the phosphor layer, and a second optical member provided on the first surface of the phosphor layer or the same side to which the first surface faces, or on a second surface opposite to the first surface, and configured to convert light radiated from the phosphor layer into parallel light.

Abstract: A light-emitting device includes: a package; a semiconductor light-emitting element mounted above the package; a cap component provided above the package; a sealing component which seals a space between the package and the cap component; and a phosphor containing resin including phosphor disposed in the sealed space.

Abstract: A light-emitting device includes a semiconductor light-emitting element and a fluorescent member which emits fluorescent light when irradiated with light from the semiconductor light-emitting element. The fluorescent member includes (i) oxygen-proof resin having no permeability to oxygen and (ii) resin which includes semiconductor particles having different excitation fluorescence spectra according to particle diameter and is encased in the oxygen-proof resin.

Abstract: A light-emitting device includes: a package; a semiconductor light-emitting element mounted above the package; a cap component provided above the package; a sealing component which seals a space between the package and the cap component; and a phosphor containing resin including phosphor disposed in the sealed space.

Abstract: An optical element includes a phosphor layer containing a phosphor which is excited by light of a first wavelength and radiates light of a second wavelength different from the first wavelength, a first optical member provided on a first surface of the phosphor layer and configured to concentrate light in the phosphor layer, and a second optical member provided on the first surface of the phosphor layer or the same side to which the first surface faces, or on a second surface opposite to the first surface, and configured to convert light radiated from the phosphor layer into parallel light.

Abstract: An optical irradiation apparatus includes: a light-emitting device configured to emit a plurality of light beams whose optical axes extend in a substantially identical direction; a collimator part configured to convert the light beams into parallel light beams; and a light condensing part configured to collect the parallel light beams. The light-emitting device includes a super luminescent diode array in which a plurality of waveguides are provided on a substrate. Each of the waveguides has a light-emitting facet including a light emission point from which an associated one of the light beams is emitted. The light emission points are located in a plane. The plane including the light emission points is orthogonal to a direction of an optical axis of the collimator part.

Abstract: A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

Abstract: A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

Abstract: The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.

Abstract: A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.

Abstract: In a short-wavelength laser module, long-term reliability is lost because of unnecessary gas deposited on the end face of its optical waveguide. A short-wavelength laser module has a package structure wherein a package lid used when the short-wavelength laser module is hermetically sealed does not make contact with internal gas, and a process of accelerating the polymerization of a securing agent used inside the package is incorporated, whereby unnecessary gas from the securing agent is eliminated and the long-term reliability of the output is attained.

Abstract: A solid state-imaging element including photoelectric conversion element and an optical element such as a photonic crystal is disclosed. The optical element is formed on the photoelectric conversion element, and has a refractive index periodic structure made up of stacked layers of materials with different refractive indices. The refractive index periodic structure is defined by multiple layers along a stacking direction and by a group of concentric similar shapes along an in-plane direction. The optical element may be fabricated via lithography and etching, or an autocloning technique. A solid state-imaging device including an arrangement of several solid-state imaging elements is also disclosed.

Abstract: An electron emitter according to the present invention includes: an area in which a surface of the substrate is exposed or an area in which the inner surface of the substrate is exposed; the SiC substrate with the (0001) surface as a principal surface; the electron emission layer has carbon formed on the substrate surface C; and the electron formed on the area. In addition, the electrode may be formed on the substrate Si surface. Furthermore, the electron emission layer may be formed on a part of the substrate surface C. The electrode may be formed on the area, of the substrate C surface, on which the electron emission layer is not formed.