Patents by Inventor Shinichi Tamari
Shinichi Tamari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8896028Abstract: A semiconductor device includes: an epitaxial substrate formed by stacking a plurality of kinds of semiconductors over one semiconductor substrate by epitaxial growth; a field effect transistor of a first conductivity type formed in a first region; a field effect transistor of a second conductivity type formed in a second region; and a protective element formed in a third region. The protective element includes: a first stacking structure formed by etching the epitaxial substrate by vertical etching that proceeds in a stacking thickness direction; and a second stacking structure formed by etching the epitaxial substrate by vertical etching that proceeds in a stacking thickness direction. The protective element has two PN junctions on a current path formed between an upper end of the first stacking structure and an upper end of the second stacking structure via a base part of the first stacking structure and the second stacking structure.Type: GrantFiled: January 31, 2013Date of Patent: November 25, 2014Assignee: Sony CorporationInventors: Masahiro Mitsunaga, Shinichi Tamari, Yuji Ibusuki
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Patent number: 8698202Abstract: A semiconductor device including at least a p-channel field-effect transistor region formed above a compound semiconductor substrate. The p-channel field-effect transistor region includes an undoped buffer layer; a p-type channel layer formed in contact with the buffer layer; a p-type source region and a p-type drain region formed in the channel layer, being separated with each other; and an n-type gate region formed above the channel layer and between the source region and the drain region. The buffer layer is formed having either a multilayer structure including a hole diffusion control layer with a band gap larger than the channel layer, or a single layer structure including only the hole diffusion control layer.Type: GrantFiled: October 21, 2011Date of Patent: April 15, 2014Assignee: Sony CorporationInventors: Masahiro Mitsunaga, Shinichi Tamari, Yuji Ibusuki
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Patent number: 8575658Abstract: A semiconductor device includes a compound semiconductor substrate; a first conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; a first conductivity type first barrier layer that forms a heterojunction with the first channel layer, and supplies a first conductivity type charge to the first channel layer; and a second conductivity type gate region that has a pn junction-type potential barrier against the first conductivity type first barrier layer; and a second conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a second conductivity type second channel layer, and a first conductivity type gate region that has a pn junction-type potential barrier against the second conductivity type second channel layer.Type: GrantFiled: June 29, 2012Date of Patent: November 5, 2013Assignee: Sony CorporationInventors: Shinichi Tamari, Mitsuhiro Nakamura, Koji Wakizono, Tomoya Nishida, Yuji Ibusuki
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Patent number: 8466494Abstract: A field effect transistor includes a source wiring that is formed on a compound semiconductor substrate, and has a plurality of source electrodes arranged in parallel to each other at predetermined intervals, a drain wiring that is formed on the compound semiconductor substrate, and has a plurality of drain electrodes arranged in parallel to each other at predetermined intervals and alternatively disposed in a parallel direction of the plurality of source electrodes, a gate wiring that is formed on the compound semiconductor substrate, and has a portion located between the source electrode and the drain electrode which are adjacent to each other at least in the parallel direction, and a plurality of buried gate layers that is formed under the gate wiring in a region in which the gate wiring is formed, and is independently provided between each electrode of the source electrodes and the drain electrodes.Type: GrantFiled: February 14, 2012Date of Patent: June 18, 2013Assignee: Sony CorporationInventor: Shinichi Tamari
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Patent number: 8378389Abstract: A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.Type: GrantFiled: July 15, 2010Date of Patent: February 19, 2013Assignee: Sony CorporationInventors: Shinichi Tamari, Mitsuhiro Nakamura, Koji Wakizono, Tomoya Nishida, Yuji Ibusuki
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Publication number: 20120267684Abstract: A semiconductor device includes a compound semiconductor substrate; a first conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; a first conductivity type first barrier layer that forms a heterojunction with the first channel layer, and supplies a first conductivity type charge to the first channel layer; and a second conductivity type gate region that has a pn junction-type potential barrier against the first conductivity type first barrier layer; and a second conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a second conductivity type second channel layer, and a first conductivity type gate region that has a pn junction-type potential barrier against the second conductivity type second channel layer.Type: ApplicationFiled: June 29, 2012Publication date: October 25, 2012Applicant: Sony CorporationInventors: SHINICHI TAMARI, MITSUHIRO NAKAMURA, KOJI WAKIZONO, TOMOYA NISHIDA, YUJI IBUSUKI
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Publication number: 20120211802Abstract: A field effect transistor includes a source wiring that is formed on a compound semiconductor substrate, and has a plurality of source electrodes arranged in parallel to each other at predetermined intervals, a drain wiring that is formed on the compound semiconductor substrate, and has a plurality of drain electrodes arranged in parallel to each other at predetermined intervals and alternatively disposed in a parallel direction of the plurality of source electrodes, a gate wiring that is formed on the compound semiconductor substrate, and has a portion located between the source electrode and the drain electrode which are adjacent to each other at least in the parallel direction, and a plurality of buried gate layers that is formed under the gate wiring in a region in which the gate wiring is formed, and is independently provided between each electrode of the source electrodes and the drain electrodes.Type: ApplicationFiled: February 14, 2012Publication date: August 23, 2012Applicant: SONY CORPORATIONInventor: Shinichi Tamari
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Publication number: 20120126291Abstract: A semiconductor device including at least a p-channel field-effect transistor region formed above a compound semiconductor substrate. The p-channel field-effect transistor region includes an undoped buffer layer; a p-type channel layer formed in contact with the buffer layer; a p-type source region and a p-type drain region formed in the channel layer, being separated with each other; and an n-type gate region formed above the channel layer and between the source region and the drain region. The buffer layer is formed having either a multilayer structure including a hole diffusion control layer with a band gap larger than the channel layer, or a single layer structure including only the hole diffusion control layer.Type: ApplicationFiled: October 21, 2011Publication date: May 24, 2012Applicant: SONY CORPORATIONInventors: Masahiro Mitsunaga, Shinichi Tamari, Yuji Ibusuki
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Publication number: 20110024798Abstract: A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.Type: ApplicationFiled: July 15, 2010Publication date: February 3, 2011Applicant: Sony CorporationInventors: Shinichi Tamari, Mitsuhiro Nakamura, Koji Wakizono, Tomoya Nishida, Yuji Ibusuki