Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.

Abstract: The radiation detector includes a sensor board including a flexible substrate and a layer which is provided on a first surface of the substrate and in which a plurality of pixels, which accumulate electrical charges generated in accordance with light converted from radiation, are formed; a conversion layer that is provided on a side, opposite to the substrate, of the layer in which the pixels are formed, and converts radiation into the light; a first protective film that is provided on the first surface side of the substrate with an end part also provided on the first surface side of the substrate and covers at least the entire conversion layer; and a second protective film that covers at least a second surface opposite to the first surface.

Abstract: The radiation detector includes: a sensor board including a flexible substrate and a layer which is provided on a first surface of the substrate and in which a plurality of pixels, which accumulate electrical charges generated in accordance with light converted from radiation, are formed; a conversion layer that is provided on a side, opposite to the substrate, of the layer in which the pixels are formed, and converts radiation into light; protective film that covers at least the conversion layer; a reinforcing member provided on a second surface opposite to the first surface of the substrate; and a supporting member that supports the reinforcing member with the reinforcing member sandwiched between the supporting member and the second surface of the substrate.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area.

Abstract: A radiation detector includes a flexible substrate, and a sensor board including a layer which is provided on a first surface of the substrate and in which a plurality of pixels, which accumulate electrical charges generated in accordance with light converted from radiation, are formed, a conversion layer that is provided on the first surface side of the sensor board to convert radiation into light, a protective film that covers at least a region ranging from a region that covers the conversion layer to a region at an outer peripheral part of a second surface opposite to the first surface of the substrate, and a supporting member that supports the region of the substrate via the protective film from the second surface side of the substrate.

Abstract: A radiographic imaging apparatus includes a sensor board including a flexible substrate, and a plurality of pixels that are provided on a first surface of the substrate to accumulate electrical charges generated in accordance with light converted from radiation. Additionally, the radiographic imaging apparatus includes flexible cables having one ends electrically connected to the sensor board and the other ends provided with connectors, and flexible cables on which signal processing circuit parts are mounted and which are connected electrically to the cables by the one ends thereof being electrically connected to the connectors. Additionally, the radiographic imaging apparatus includes flexible cables having one ends electrically connected to the sensor board and the other ends provided with connectors, and flexible cables on which drive circuit parts are mounted and which are connected electrically to the cables by the one ends thereof being electrically connected to the connectors.

Abstract: A radiation detector includes a flexible substrate; a plurality of pixels provided on a first surface of the substrate to accumulate electrical charges generated in accordance with light converted from radiation; and a terminal region part formed with a plurality of terminal regions each including terminals connected to a predetermined pixel group including some of the plurality of pixels and formed on the first surface of the substrate.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel area, a first insulating layer which is provided on the insulating substrate and includes at least nitrogen, a second insulating layer at least provided on the first insulating layer of the peripheral circuit area, a first thin-film transistor which is provided above the first insulating layer of the pixel area and includes a first oxide semiconductor layer, and a second thin-film transistor which is provided on the second insulating layer of the peripheral circuit area and includes a second oxide semiconductor layer. The second insulating layer in the pixel area is thinner than that in the peripheral circuit area.

Abstract: A thin film transistor includes an oxide semiconductor layer including a channel region, and a source region and a drain region having a resistivity lower than that of the channel region; a gate insulating layer disposed on the channel region of the oxide semiconductor layer; a gate electrode disposed on the gate insulating layer; and an aluminum oxide layer covering the lateral surface of the gate insulating layer, and the source region and the drain region, wherein the gate insulating layer has a multi-layer structure including a first insulating layer and a second insulating layer, and the first insulating layer contains silicon oxide as a main component, and is disposed on and in contact with the channel region.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, an oxide semiconductor layer, a gate insulating film, a gate electrode, a first insulating film and a second insulating film. The oxide semiconductor layer is provided on the insulating substrate and includes first and second low-resistance regions and a high-resistance region between the first and second low-resistance regions. The gate insulating film is provided on the high-resistance region of the oxide semiconductor layer. The gate electrode is provided on the gate insulating film. The first insulating film is provided above the gate electrode, gate insulating film and first and second low-resistance regions of the oxide semiconductor layer, and contains at least fluorine. The second insulating film is provided on the first insulating film, and contains aluminum.

Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.

Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.

Abstract: A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.

Abstract: An electronic device includes a control electrode 11 formed on a substrate 10, an insulating layer 12 covering the control electrode 11, an active layer 13 including an organic semiconductor material, which is formed on the insulating layer 12, and a first electrode 14A and a second electrode 14B formed on the active layer 13, and portions 15 of the first electrode and second electrode in contact with the active layer 13 are modified with an electrode modification material.

Abstract: A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.

Abstract: A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode.

Abstract: A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode, with an insulating layer interposed in between; an etching stopper layer on the semiconductor layer; a pair of contact layers provided on the semiconductor layer, at least on both sides of the etching stopper layer; and source-drain electrodes electrically connected to the semiconductor layer through the pair of contact layers, and being in contact with the insulating layer.

Abstract: A thin film transistor including a contact layer that contains an organic semiconductor layer over a substrate, a contact layer containing an organic semiconductor material, an acceptor or donor material provided between an organic semiconductor layer, and a source electrode and a drain electrode at opposite end portions of the contact layer; and a method of fabricating same.

Abstract: An organic thin-film transistor includes: a semiconductor layer made of an organic material; a gate electrode; a source electrode and a drain electrode each at least partially provided above the semiconductor layer; and a conductive layer containing an oxide having conductivity that changes due to reduction, the conductive layer being provided in each of a first region and a second region facing the source electrode and the drain electrode provided above the semiconductor layer, respectively.

Abstract: An organic thin-film transistor includes: a semiconductor layer made of an organic material; a gate electrode; a source electrode and a drain electrode each at least partially provided above the semiconductor layer; and a conductive layer containing an oxide having conductivity that changes due to reduction, the conductive layer being provided in each of a first region and a second region facing the source electrode and the drain electrode provided above the semiconductor layer, respectively.