Abstract: A thermal sensation estimation device includes an acquirer, a clothing amount estimator, a heat loss amount estimator and a thermal sensation estimator. The acquirer acquires information about a surface temperature of a surface region in a part of clothing of a user. The clothing amount estimator estimates a clothing amount at a clothed portion, the clothed portion being a part of a body of the user, covered with the surface region. The heat loss amount estimator estimates, based on at least the information about the surface temperature and the clothing amount, a heat loss amount lost from the user's body. The thermal sensation estimator estimates thermal sensation of the user based on the heat loss amount.

Abstract: A gas sensor includes: a gas-sensitive body layer disposed above a substrate and including a metal oxide layer; a first electrode on the gas-sensitive body layer; and a second electrode on the gas-sensitive body layer, being apart from the first electrode by a gap. The gas-sensitive body layer has a resistance change characteristic that reversibly transitions to a high-resistance state and a low-resistance state on basis of a voltage applied across the first electrode and the second electrode. At least a part of the gas-sensitive body layer is exposed to the gap. The gas-sensitive body layer has a resistance that decreases when gas containing a hydrogen atom is in contact with the second electrode.

Abstract: A gas monitoring system includes at least one sensor device that detects gas and outputs a detection result; and a gateway that receives the detection result. The at least one sensor device includes a sensor module having a gas sensor that detects gas; an analog-to-digital (A/D) converter that processes the detection result outputted from the gas sensor; a communication module that communicates with the sensor module and transmits information processed by the A/D converter exteriorly of the at least one sensor device; a power source that is an electric power source of the sensor module; and a power source that is an electric power source of the communication module.

Abstract: A gas detection device includes a gas sensor and a drive circuit. The drive circuit includes a measurement circuit, a power supply circuit, and a control circuit. The gas sensor includes a first electrode, a second electrode, a metal-oxide layer disposed between the first electrode and the second electrode, and an insulating film that covers the first electrode, the second electrode, and the metal-oxide layer, and has an opening that exposes part of a main surface of the second electrode. A resistance value of the metal-oxide layer decreases when gas containing hydrogen atoms contact the second electrode. When the resistance value of the metal-oxide layer falls outside a predetermined range, the drive circuit applies a predetermined voltage between the first electrode and the second electrode to restore the resistance value of the metal-oxide layer back into the predetermined range.

Abstract: A gas sensor includes a gas detecting element that includes a first electrode, a metal oxide layer, and a second electrode; and a first insulating film that has an opening allowing the second electrode to be partially exposed therethrough and covers the first electrode, the metal oxide layer, and another part of the second electrode. The metal oxide layer has a characteristic where its resistance value changes as the second electrode makes contact with gas molecules including hydrogen atoms. A first step is provided at a portion lying on an interface between the metal oxide layer and the second electrode and located within the opening as viewed in plan view. A local region is provided in the metal oxide layer and near the first step. A degree of oxygen deficiency of the local region is greater than a degree of oxygen deficiency of other regions in the metal oxide layer.

Abstract: A hydrogen detection apparatus includes a hydrogen sensor, a sensor control circuit configured to sense a resistance value of the hydrogen sensor, and a microcomputer configured to set an off time that differs depending on an operating environment and intermittently drive the sensor control circuit. The hydrogen sensor includes a first electrode; a metal-oxide layer on the first electrode, and in which a resistance value is configured to change in response to contacting hydrogen atoms; a second electrode on the metal-oxide layer; and an insulating film that covers at least a portion of lateral surfaces of the first electrode, the metal-oxide layer, and the second electrode. A portion of at least one of: (i) a first interface between the first electrode and the metal-oxide layer; and (ii) a second interface between the second electrode and the metal-oxide layer is uncovered by the insulating film and exposed to a detection space.

Abstract: A gas monitoring system includes at least one sensor device that detects gas and outputs a detection result; and a gateway that receives the detection result. The at least one sensor device includes a sensor module having a gas sensor that detects gas; an analog-to-digital (A/D) converter that processes the detection result outputted from the gas sensor; a communication module that communicates with the sensor module and transmits information processed by the A/D converter exteriorly of the at least one sensor device; a power source that is an electric power source of the sensor module; and a power source that is an electric power source of the communication module.

Abstract: A gas detection device includes a gas sensor and a drive circuit. The drive circuit includes a measurement circuit, a power supply circuit, and a control circuit. The gas sensor includes a first electrode, a second electrode, a metal-oxide layer disposed between the first electrode and the second electrode, and an insulating film that covers the first electrode, the second electrode, and the metal-oxide layer, and has an opening that exposes part of a main surface of the second electrode. A resistance value of the metal-oxide layer decreases when gas containing hydrogen atoms contact the second electrode. When the resistance value of the metal-oxide layer falls outside a predetermined range, the drive circuit applies a predetermined voltage between the first electrode and the second electrode to restore the resistance value of the metal-oxide layer back into the predetermined range.

Abstract: A hydrogen detection apparatus includes a hydrogen sensor, a sensor control circuit that senses the resistance value of the hydrogen sensor, and a microcomputer that sets an off time that differs depending on an operating environment and intermittently drives the sensor control circuit. The hydrogen sensor includes a first electrode; a metal-oxide layer disposed on the first electrode, and in which a resistance value changes in response to contacting hydrogen atoms; a second electrode disposed on the metal-oxide layer; and an insulating film that covers at least a portion of lateral surfaces of the first electrode, the metal-oxide layer, and the second electrode. A portion of at least one of (i) a first interface between the first electrode and the metal-oxide layer and (ii) a second interface between the second electrode and the metal-oxide layer is uncovered by the insulating film and exposed to a detection space.

Abstract: A gas sensor includes: a gas-sensitive body layer disposed above a substrate and including a metal oxide layer; a first electrode on the gas-sensitive body layer; and a second electrode on the gas-sensitive body layer, being apart from the first electrode by a gap. The gas-sensitive body layer has a resistance change characteristic that reversibly transitions to a high-resistance state and a low-resistance state on basis of a voltage applied across the first electrode and the second electrode. At least a part of the gas-sensitive body layer is exposed to the gap. The gas-sensitive body layer has a resistance that decreases when gas containing a hydrogen atom is in contact with the second electrode.

Abstract: A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.

Abstract: A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MOx (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MOy (where x>y), and the third transition metal oxide layer having a composition expressed as MOz (where y>z).

Abstract: A nonvolatile memory element includes: a first electrode; a second electrode; and a variable resistance layer between the first and second electrodes. The variable resistance layer having a resistance value that reversibly changes according to an electrical signal provided between the electrodes. The variable resistance layer includes a first variable resistance layer and a second variable resistance layer. The first variable resistance layer comprises a first metal oxide. The second variable resistance layer is planar and includes a first part and a second part. The first part comprises a second metal oxide and is planar. The second part comprises an insulator and is planar. The second metal oxide has a lower oxygen deficient degree than that of the first metal oxide. The first and second parts are in contact with different parts of a main surface of the first variable resistance layer which faces the second variable resistance layer.

Abstract: A method of manufacturing a non-volatile memory element includes forming a first electrode; forming a variable resistance layer; and forming a second electrode. Forming the variable resistance layer includes forming a third metal oxide layer having a third metal oxide, forming a second metal oxide layer having a second metal oxide, and forming a first metal oxide layer e having a first metal oxide; wherein the variable resistance layer reversibly changes its resistance value in response to an electric signal applied between the first electrode and the second electrode; the first metal oxide is lower in degree of oxygen deficiency than the third metal oxide; the second metal oxide is lower in degree of oxygen deficiency than the third metal oxide; the third metal oxide is an oxygen-deficient metal oxide; and the first metal oxide layer is different in density from the second metal oxide layer.

Abstract: In a method of manufacturing a variable resistance non-volatile memory device including non-volatile memory element layers stacked together by repeating the step (S100, S200 . . .

Abstract: A method of designing a cross-point non-volatile memory device including memory elements arranged in (N×M) matrix, each of the memory elements including a variable resistance element and a bidirectional current steering element connected in series with the variable resistance element, the method comprises the step of: when an absolute value of a low-resistance state writing voltage is VR and an absolute value of a current flowing through the variable resistance element having changed to a low-resistance state by application of the low-resistance state writing voltage to both ends of the variable resistance element in a high-resistance state is Ion, and a relationship between a voltage V0 applied to both ends of the bidirectional current steering element and a current I flowing through the bidirectional current steering element is approximated as |V0|=a×Log(I)+b, deciding N, M, VR, Ion, a, and b such that b?VR/2>a×[Log {(N?1)×(M?1)}?Log(Ion)] is satisfied (S101).

Abstract: In a method of manufacturing a variable resistance non-volatile memory device including non-volatile memory element layers stacked together by repeating the step (S100, S200 . . .

Abstract: A method of manufacturing a non-volatile memory element includes forming a first electrode; forming a variable resistance layer; and forming a second electrode. Forming the variable resistance layer includes forming a third metal oxide layer having a third metal oxide, forming a second metal oxide layer having a second metal oxide, and forming a first metal oxide layer e having a first metal oxide; wherein the variable resistance layer reversibly changes its resistance value in response to an electric signal applied between the first electrode and the second electrode; the first metal oxide is lower in degree of oxygen deficiency than the third metal oxide; the second metal oxide is lower in degree of oxygen deficiency than the third metal oxide; the third metal oxide is an oxygen-deficient metal oxide; and the first metal oxide layer is different in density from the second metal oxide layer.

Abstract: A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.

Abstract: A nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer positioned between the first electrode and the second electrode. The variable resistance layer has a resistance state which reversibly changes based on an electrical signal applied between the first electrode and the second electrode. The variable resistance layer includes a first variable resistance layer having a first metal oxide and a second variable resistance layer having a second metal oxide. The second variable resistance layer includes a metal-metal bonding region including a metal bond of metal atoms included in the second metal oxide, and the second metal oxide has a low degree of oxygen deficiency and a high resistance value compared to the first metal oxide.