Patents by Inventor Shinichi Yoshiwatari

Shinichi Yoshiwatari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulated gate semiconductor device and method for manufacturing insulated gate semiconductor device
    Patent number: 10530354
    Abstract: An insulating gate semiconductor device includes an insulating gate semiconductor element, an insulating circuit board, and a main-current path member. A main-current of the insulating gate semiconductor element flows toward a first external terminal in the main-current path member; and a gate-current path member, being patterned so as to have a linearly extending portion arranged in parallel to a linearly extending portion of the main-current path member in a planar pattern on the insulating circuit board, being provided to connect between a second external terminal and a gate electrode of the insulating gate semiconductor element. A current which is induced in the gate-current path member by mutual induction caused by a change in magnetic field implemented by the main-current is used for increasing the gate-current in a turn-on period of the insulating gate semiconductor element.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: January 7, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Shinichi Masuda, Shinichi Yoshiwatari, Kenichi Yoshida, Hiroshi Ishida
  • INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING INSULATED GATE SEMICONDUCTOR DEVICE
    Publication number: 20180191337
    Abstract: An insulating gate semiconductor device includes an insulating gate semiconductor element, an insulating circuit board, and a main-current path member. A main-current of the insulating gate semiconductor element flows toward a first external terminal in the main-current path member; and a gate-current path member, being patterned so as to have a linearly extending portion arranged in parallel to a linearly extending portion of the main-current path member in a planar pattern on the insulating circuit board, being provided to connect between a second external terminal and a gate electrode of the insulating gate semiconductor element. A current which is induced in the gate-current path member by mutual induction caused by a change in magnetic field implemented by the main-current is used for increasing the gate-current in a turn-on period of the insulating gate semiconductor element.
    Type: Application
    Filed: February 26, 2018
    Publication date: July 5, 2018
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Shinichi Masuda, Shinichi Yoshiwatari, Kenichi Yoshida, Hiroshi Ishida