Patents by Inventor Shinichiro Hayasaka
Shinichiro Hayasaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240093059Abstract: Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.Type: ApplicationFiled: October 18, 2023Publication date: March 21, 2024Applicant: RESONAC CORPORATIONInventors: Emi MIYAZAWA, Tsuyoshi HAYASAKA, Takashi KAWAMORI, Shinichiro SUKATA, Yoshihito INABA, Keisuke NISHIDO
-
Patent number: 11899476Abstract: A gas flow measuring method is provided. A first pressure of a gas in a first and a second flow path is measured. A gas is supplied to the first and the second flow paths by repeating gas supply and stop of the gas supply, and a gas supply time is measured. A second pressure and a temperature of the gas in the first and the second flow path is measured, a third pressure of the gas in the second flow path is measured after the gas is exhausted from the second flow path, and a fourth pressure of the gas in the first and the second flow path is measured. The gas flow supplied to the first and the second flow path is calculated based on the first to fourth pressures and the temperature, and corrected based on a theoretical gas supply time and a calculated average time.Type: GrantFiled: February 16, 2021Date of Patent: February 13, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Risako Matsuda, Shinichiro Hayasaka, Manabu Oie, Keita Shouji
-
Publication number: 20210263540Abstract: A gas flow measuring method is provided. A first pressure of a gas in a first and a second flow path is measured. A gas is supplied to the first and the second flow paths by repeating gas supply and stop of the gas supply, and a gas supply time is measured. A second pressure and a temperature of the gas in the first and the second flow path is measured, a third pressure of the gas in the second flow path is measured after the gas is exhausted from the second flow path, and a fourth pressure of the gas in the first and the second flow path is measured. The gas flow supplied to the first and the second flow path is calculated based on the first to fourth pressures and the temperature, and corrected based on a theoretical gas supply time and a calculated average time.Type: ApplicationFiled: February 16, 2021Publication date: August 26, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Risako Matsuda, Shinichiro Hayasaka, Manabu Oie, Keita Shouji
-
Publication number: 20190304824Abstract: A plasma processing apparatus includes a placing table having a placing surface on which a workpiece is placed to be subjected to a plasma processing; an elevator configured to raise and lower the workpiece with respect to the placing surface of the placing table; and an elevator controller configured to control the elevator, during a period until a transfer of the workpiece begins after a completion of the plasma processing on the workpiece, to hold the workpiece at a position where the placing surface of the placing table and the workpiece are spaced apart from each other by a distance that prevents an intrusion of a reaction product, and control the elevator, when the transfer of the workpiece begins, to raise the workpiece from the position where the workpiece is held.Type: ApplicationFiled: March 29, 2019Publication date: October 3, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Takayuki SUZUKI, Wataru TAKAYAMA, Takahiro MURAKAMI, Kimihiro FUKASAWA, Shinichiro HAYASAKA
-
Patent number: 10316835Abstract: In a method of an embodiment, a pressure sensor is selected from first and second pressure sensors according to a set flow rate. A measurable maximum pressure of the second pressure sensor is higher than a measurable maximum pressure of first pressure sensor. The target pressure of a chamber is determined according to the set flow rate. Until the pressure of the chamber reaches the target pressure after gas is started to be output from the flow rate controller to the chamber at an output flow rate according to the set flow rate and a pressure controller provided between the chamber and an exhaust apparatus is closed, the pressure of the chamber is measured by the selected pressure sensor. The output flow rate of the flow rate controller is determined from a rate of rise of the pressure of the chamber.Type: GrantFiled: October 12, 2017Date of Patent: June 11, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Jun Yamashima, Shinichiro Hayasaka, Toshihiro Tsuruta, Hiroshi Fujii, Junichi Akiba, Naoya Jami, Naotsugu Hoshi
-
Publication number: 20180106247Abstract: In a method of an embodiment, a pressure sensor is selected from first and second pressure sensors according to a set flow rate. A measurable maximum pressure of the second pressure sensor is higher than a measurable maximum pressure of first pressure sensor. The target pressure of a chamber is determined according to the set flow rate. Until the pressure of the chamber reaches the target pressure after gas is started to be output from the flow rate controller to the chamber at an output flow rate according to the set flow rate and a pressure controller provided between the chamber and an exhaust apparatus is closed, the pressure of the chamber is measured by the selected pressure sensor. The output flow rate of the flow rate controller is determined from a rate of rise of the pressure of the chamber.Type: ApplicationFiled: October 12, 2017Publication date: April 19, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Jun YAMASHIMA, Shinichiro HAYASAKA, Toshihiro TSURUTA, Hiroshi FUJII, Junichi AKIBA, Naoya JAMI, Naotsugu HOSHI
-
Patent number: 9732909Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.Type: GrantFiled: July 24, 2014Date of Patent: August 15, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Shinichiro Hayasaka, Ken Horiuchi, Fumiko Yokouchi, Takeshi Yokouchi
-
Publication number: 20140332100Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.Type: ApplicationFiled: July 24, 2014Publication date: November 13, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Shinichiro HAYASAKA, Ken HORIUCHI, Fumiko YOKOUCHI, Takeshi YOKOUCHI
-
Substrate processing apparatus, control method adopted in substrate processing apparatus and program
Patent number: 8859046Abstract: A substrate processing apparatus according to the present invention comprises a plurality of processing chambers, discharge systems each provided in conjunction with one of the processing chambers and a common discharge system connected with the discharge systems of at least two processing chambers among the discharge systems provided in conjunction with the individual processing chambers. The common discharge allows a switch-over between a scrubbing common discharge system that discharges discharge gas from each processing chamber after scrubbing the discharge gas at a scrubbing means and a non-scrubbing common discharge system that directly discharges the discharge gas from the discharge system of the processing chamber without scrubbing at the scrubbing means.Type: GrantFiled: October 11, 2011Date of Patent: October 14, 2014Assignee: Tokyo Electron LimitedInventors: Hiroshi Nakamura, Toshiyuki Kobayashi, Shinichiro Hayasaka, Seiichi Kaise -
Patent number: 8790529Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.Type: GrantFiled: January 24, 2011Date of Patent: July 29, 2014Assignee: Tokyo Electron LimitedInventors: Shinichiro Hayasaka, Ken Horiuchi, Fumiko Yagi, Takeshi Yokouchi
-
SUBSTRATE PROCESSING APPARATUS, CONTROL METHOD ADOPTED IN SUBSTRATE PROCESSING APPARATUS AND PROGRAM
Publication number: 20120046774Abstract: A substrate processing apparatus according to the present invention comprises a plurality of processing chambers, discharge systems each provided in conjunction with one of the processing chambers and a common discharge system connected with the discharge systems of at least two processing chambers among the discharge systems provided in conjunction with the individual processing chambers. The common discharge allows a switch-over between a scrubbing common discharge system that discharges discharge gas from each processing chamber after scrubbing the discharge gas at a scrubbing means and a non-scrubbing common discharge system that directly discharges the discharge gas from the discharge system of the processing chamber without scrubbing at the scrubbing means.Type: ApplicationFiled: October 11, 2011Publication date: February 23, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroshi NAKAMURA, Toshiyuki Kobayashi, Shinichiro Hayasaka, Seiichi Kaise -
Publication number: 20110120563Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.Type: ApplicationFiled: January 24, 2011Publication date: May 26, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Shinichiro HAYASAKA, Ken Horiuchi, Fumiko Yagi, Takeshi Yokouchi
-
Patent number: 7896967Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.Type: GrantFiled: February 5, 2007Date of Patent: March 1, 2011Assignee: Tokyo Electron LimitedInventors: Shinichiro Hayasaka, Ken Horiuchi, Fumiko Yagi, Takeshi Yokouchi
-
Publication number: 20070181255Abstract: A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time.Type: ApplicationFiled: February 5, 2007Publication date: August 9, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Shinichiro HAYASAKA, Ken Horiuchi, Fumiko Yagi, Takeshi Yokouchi
-
Substrate processing apparatus, control method adopted in substrate processing apparatus and program
Publication number: 20060176928Abstract: A substrate processing apparatus according to the present invention comprises a plurality of processing chambers, discharge systems each provided in conjunction with one of the processing chambers and a common discharge system connected with the discharge systems of at least two processing chambers among the discharge systems provided in conjunction with the individual processing chambers. The common discharge allows a switch-over between a scrubbing common discharge system that discharges discharge gas from each processing chamber after scrubbing the discharge gas at a scrubbing means and a non-scrubbing common discharge system that directly discharges the discharge gas from the discharge system of the processing chamber without scrubbing at the scrubbing means.Type: ApplicationFiled: February 7, 2006Publication date: August 10, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroshi Nakamura, Toshiyuki Kobayashi, Shinichiro Hayasaka, Seiichi Kaise