Abstract: A thin film semiconductor device comprising a semiconductor layer and an electrically conductive thin film which are formed by an alternate current plating method, and a process for producing thereof.

Abstract: In a liquid crystal projection color display apparatus having three liquid crystal display devices used for red, green and blue light, each liquid crystal display device has a liquid crystal display panel and a microlens array disposed on the light-source side or the light-source and screen sides of the liquid crystal display panel. The microlens array has a controllable refractive power which is controlled by applying an electrtical power thereto. An electrical voltage is applied between transparent electrodes formed on both surfaces of a microlens array so that the refractive power of the microlens array can be made a value adapted to suit the corresponding one of red, green and blue light.

Abstract: In a liquid crystal projection display apparatus, light is emitted from a light source and is separated and directed to pixels of a liquid crystal display element and condensed at the center of each pixel with a first microlens array. The light which has passed through the liquid crystal display element is converted into approximately parallel rays with a second microlens array. The light which has passed through the second microlens array is projected onto a screen via a projection lens.

Abstract: Nitrogen gas plasma emission intensities are theoretically calculated at various gas temperatures, while they are actually measured by a spectroscope. By comparing the waveforms of the calculated and measured emission intensities with each other, the nitrogen gas temperature of at an arbitrary point in a plasma treating room can be determined.

Abstract: A method for making photovoltaic device comprising the steps of moving at least one substrate into a reaction chamber, causing a plasma reaction of raw material gases in said reaction chamber, thereby forming an amorphous silicon layer of a first conductivity type on said substrate, moving said at least one substrate into a next reaction chamber for a next plasma reaction, causing said next plasma reaction of next raw material gases in said reaction chamber, thereby forming a second amorphous silicon layer of a second conductivity type on said layer of the first conductivity type, the improvement being in after finishing said forming of said an amorphous silicon layer of a first conductivity type, changing the gas atmosphere of said reaction chamber into a different atmosphere which is substantially identical and of equal pressure to the next gas atmosphere of said next reaction chamber, and thereafter moving said substrate to said next reaction chamber.

Abstract: A semiconductor device utilizing amorphous Si.sub.1-x C.sub.x (0.ltoreq..times..ltoreq.1) containing hydrogen. Through a high frequency glow discharge process or a high frequency sputtering process, the composition x is varied to form a heterojunction between amorphous Si.sub.1-x C.sub.x layers, and electrodes are mounted to the layers to complete the device. The amorphous material is desirably selected to have a forbidden band width of 1.7 to 3.2 eV so that the sensitivity of the device can cover the visible range. Because of the amorphous layers, freedom of type and shape of the substrate of the device is large. The dark resistance of the layers is large to improve the photoconductive characteristics of the semiconductor device.