Abstract: A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.

Abstract: In a dielectric element, the side faces are roughened so that the surface roughness Ra is 15 nm or greater. By this means, the area of contact between a glass epoxy resin substrate and insulating material is increased, adhesion with resin substrates is improved, and strength and reliability can be enhanced when buried between two resin substrates. In the dielectric element, the surface roughness Ra of side surfaces is 5000 nm or less, so that when burying the dielectric element between a glass epoxy resin substrate and insulating material, the occurrence of air bubbles between the surface of the dielectric element and the resin can be prevented.

Abstract: In a dielectric element, the angle ? made by either the top face or the bottom face and the side faces is either 0°<?<89°, or is 91°<?<180°, and is an angle other than 89°???91°. By this means, the area of contact of the side faces of the dielectric element with a glass epoxy resin substrate and with insulating material is increased, adhesion with the resin substrates is improved, and strength and reliability can be enhanced when buried between the two resin substrates.

Abstract: A dielectric device having a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer. At least one of the first to nth metal layers contains a base metal. Interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra1 to Ran (nm), while an average value Ram (nm) of the arithmetic mean roughnesses of Ra1 to Ran (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram ?1.3.

Abstract: A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.

Abstract: In a dielectric element, the angle ? made by either the top face or the bottom face and the side faces is either 0°<?<89°, or is 91°<?<180°, and is an angle other than 89°???91°. By this means, the area of contact of the side faces of the dielectric element with a glass epoxy resin substrate and with insulating material is increased, adhesion with the resin substrates is improved, and strength and reliability can be enhanced when buried between the two resin substrates.

Abstract: In a dielectric element, the side faces are roughened so that the surface roughness Ra is 15 nm or greater. By this means, the area of contact between a glass epoxy resin substrate and insulating material is increased, adhesion with resin substrates is improved, and strength and reliability can be enhanced when buried between two resin substrates. In the dielectric element, the surface roughness Ra of side surfaces is 5000 nm or less, so that when burying the dielectric element between a glass epoxy resin substrate and insulating material, the occurrence of air bubbles between the surface of the dielectric element and the resin can be prevented.

Abstract: Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of a material containing Au. The amount of Au to be taken in single crystal formed in an Au crucible is smaller than that of Pt to be taken therein formed in a Pt crucible. As compared with Pt, the influence of Au on magnetic garnet film that increases the insertion loss in the film is small.

Abstract: Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of a material containing Au. The amount of Au to be taken in single crystal formed in an Au crucible is smaller than that of Pt to be taken therein formed in a Pt crucible. As compared with Pt, the influence of Au on magnetic garnet film that increases the insertion loss in the film is small.

Abstract: A of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of a material containing Au. The amount of Au to be taken in single crystal formed in an Au crucible is smaller than that of Pt to be taken therein formed in a Pt crucible. As compared with Pt, the influence of Au on magnetic garnet film that increases the insertion loss in the film is small.

Abstract: A dielectric device comprises a dielectric layer and first to nth metal layers (where n is an integer of 2 or greater) in contact with the dielectric layer. At least one of the first to nth metal layers contains a base metal. Interfaces between the first to nth metal layers and the dielectric layer have respective arithmetic mean roughnesses of Ra1 to Ran (nm), while an average value Ram (nm) of the arithmetic mean roughnesses of Ra1 to Ran (nm) and a thickness T (nm) of the dielectric layer satisfy T/Ram?1.3.

Abstract: Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of a material containing Au. The amount of Au to be taken in single crystal formed in an Au crucible is smaller than that of Pt to be taken therein formed in a Pt crucible. As compared with Pt, the influence of Au on magnetic garnet film that increases the insertion loss in the film is small.

Abstract: Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of a material containing Au. The amount of Au to be taken in single crystal formed in an Au crucible is smaller than that of Pt to be taken therein formed in a Pt crucible. As compared with Pt, the influence of Au on magnetic garnet film that increases the insertion loss in the film is small.

Abstract: The invention relates to an optical device for polarizing light by changing its Faraday rotation angle, such as optical attenuators, optical switches or polarization controllers; and its object is to provide such an optical device which can be driven even by small-sized and power-saving magnetic circuits and in which the insertion loss in the Faraday rotator may be reduced. The optical device comprises a Faraday rotator formed of a garnet single crystal, and a magnetic circuit applying an external magnetic field H that is smaller than the saturation magnetic field Hs of the Faraday rotator to the Faraday rotator.

Abstract: Proposed is a technique of producing a magnetic garnet material of which the light absorption characteristics worsen little even though it is produced through LPE. The crucible for LPE is formed of a material containing Au. The amount of Au to be taken in single crystal formed in an Au crucible is smaller than that of Pt to be taken therein formed in a Pt crucible. As compared with Pt, the influence of Au on magnetic garnet film that increases the insertion loss in the film is small.

Abstract: The invention relates to an optical device for polarizing light by changing its Faraday rotation angle, such as optical attenuators, optical switches or polarization controllers; and its object is to provide such an optical device which can be driven even by small-sized and power-saving magnetic circuits and in which the insertion loss in the Faraday rotator may be reduced. The optical device comprises a Faraday rotator formed of a garnet single crystal, and a magnetic circuit applying an external magnetic field H that is smaller than the saturation magnetic field Hs of the Faraday rotator to the Faraday rotator.