Abstract: Apparatus and methods of chemical-mechanical polishing of a layer on a wafer. A plurality of polishers arranged on a rotating plate, and a carrier is configured to hold the wafer and to place the layer in contact with the polishers. Each polisher includes a platen and a force-applying device operatively connected to the platen, and the force-applying device is configured to apply a variable force to the platen in order to change a rate of material removal over an area of the layer on the wafer contacted by a polishing pad carried by the platen.

Abstract: A preceding wafer having an aluminum wiring and a silicon oxide film formed on an insulating film is chemico-mechanically polished. In the stage in which surface irregularities of the silicon oxide film are eliminated, polishing is discontinued. On the basis of the result, a polishing time is determined in accordance with the following formula: T=(D1?D2)/v+t1 where, D1 represents the thickness in the stage in which polishing is discontinued; D2, a target thickness; t1, a time required from the initial thickness to reach the thickness D1; and the polishing rate of the material of the silicon oxide film formed on a flat substrate is denoted as v.

Abstract: A preceding wafer having an aluminum wiring and a silicon oxide film formed on an insulating film is chemico-mechanically polished. In the stage in which surface irregularities of the silicon oxide film are eliminated, polishing is discontinued.