Patents by Inventor Shinichiro Kawakami
Shinichiro Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120217Abstract: A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.Type: ApplicationFiled: September 25, 2023Publication date: April 11, 2024Inventors: Shinichiro KAWAKAMI, Kosuke YOSHIHARA, Satoru SHIMURA, Yuhei KUWAHARA, Tomoya ONITSUKA, Soichiro OKADA, Tetsunari FURUSHO
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Publication number: 20240111181Abstract: An object of the present invention is to provide an optical switch element, an optical switch device, an optical communication system, and an optical computer capable of operating even in a temperature range higher than the NĂ©el temperature. An optical switch element (10) according to the present invention includes a substance including a plurality of transition metal elements having electrons in d-orbitals, and a plurality of anions arranged around each of the plurality of transition metal elements, in which the plurality of transition metal elements are arranged in a lattice form, t2g-orbitals into which the d-orbitals of each of the plurality of transition metal elements are split are connected annularly, and in a state in which the substance does not have a long-range magnetic order, the polarization of signal light (L1) is rotated when control light (C1) is applied.Type: ApplicationFiled: December 2, 2021Publication date: April 4, 2024Applicants: TOHOKU UNIVERSITY, CHUO UNIVERSITYInventors: Shinichiro IWAI, Yohei KAWAKAMI, Tatsuya AMANO, Kenya OHGUSHI, Kenji YONEMITSU
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Publication number: 20240027923Abstract: A substrate processing apparatus for processing a substrate including a metal-containing resist film, includes: a heat treatment part configured to perform a heat treatment on the substrate having the film subjected to an exposing process; a developing process part configured to perform a developing process on the film of the substrate subjected to the heat treatment; and a gas contact part configured to bring the film into contact with an inert gas during a period after the exposing process and before the developing process.Type: ApplicationFiled: July 17, 2023Publication date: January 25, 2024Inventors: Tomoya ONITSUKA, Shinichiro KAWAKAMI, Hisashi GENJIMA
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Publication number: 20230393483Abstract: A heat treatment apparatus configured to heat-treat a substrate having a metal-containing resist film formed thereon includes a heat plate configured to support and heat the substrate; a chamber in which the heat plate is accommodated and a processing space in which a heat treatment is performed is formed; an exhaust unit configured to evacuate an inside of the processing space; and a supply mechanism configured to supply a gas into the processing space. The supply mechanism supplies, into the processing space, a high concentration gas whose CO2 concentration is adjusted to be higher than that of an ambient atmosphere around the chamber.Type: ApplicationFiled: May 31, 2023Publication date: December 7, 2023Inventor: Shinichiro Kawakami
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Publication number: 20230176484Abstract: A heat treatment apparatus includes: a stage on which a substrate is placed and heated, the substrate including an exposed resist film formed on a surface of the substrate, and the exposed resist film exhibiting a change in solubility of an exposed portion or an unexposed portion in a liquid developer by reacting with water and being heated; a lifting mechanism configured to relatively raise and lower the substrate between a first position at which the substrate is placed on the stage and a second position which is spaced apart from the stage; and a gas supply configured to supply a first gas to the substrate located at the second position before moving to the first position, the first gas having a humidity higher than that of an atmosphere in which the stage is provided.Type: ApplicationFiled: March 15, 2021Publication date: June 8, 2023Inventors: Shinichiro KAWAKAMI, Yohei SANO, Tomoya ONITSUKA
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Patent number: 11604415Abstract: A substrate processing method includes: forming a coating film on a substrate by supplying a resist liquid which is photosensitive to extreme ultraviolet (EUV) light to a surface of the substrate; forming a semi-solidified film by volatilizing a solvent contained in the coating film without heating the solvent; irradiating the semi-solidified film with EUV light thereby exposing the semi-solidified film with EUV light; and supplying a developer to the substrate after the exposure of the semi-solidified film.Type: GrantFiled: May 17, 2019Date of Patent: March 14, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Yamauchi, Shinichiro Kawakami, Masashi Enomoto
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Publication number: 20230042982Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the antireflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.Type: ApplicationFiled: October 20, 2022Publication date: February 9, 2023Inventors: Takashi YAMAUCHI, Shinichiro KAWAKAMI, Masashi ENOMOTO
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Patent number: 11508580Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.Type: GrantFiled: October 22, 2018Date of Patent: November 22, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Yamauchi, Shinichiro Kawakami, Masashi Enomoto
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Publication number: 20210208504Abstract: A substrate processing method includes: forming a coating film on a substrate by supplying a resist liquid which is photosensitive to extreme ultraviolet (EUV) light to a surface of the substrate; forming a semi-solidified film by volatilizing a solvent contained in the coating film without heating the solvent; irradiating the semi-solidified film with EUV light thereby exposing the semi-solidified film with EUV light; and supplying a developer to the substrate after the exposure of the semi-solidified film.Type: ApplicationFiled: May 17, 2019Publication date: July 8, 2021Inventors: Takashi YAMAUCHI, Shinichiro KAWAKAMI, Masashi ENOMOTO
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Patent number: 11036140Abstract: A substrate processing apparatus includes a film forming processing unit configured to form a metal-containing resist film on a substrate; a heat treatment unit configured to perform a heating processing on the substrate on which the film is formed and in which an exposure processing is performed on the film; a developing processing unit configured to perform a developing processing on the film formed on the substrate on which the heating processing is performed; and an adjustment controller configured to reduce a difference between substrates in an amount of water that reacts in the film formed on the substrate during the heating processing.Type: GrantFiled: January 21, 2020Date of Patent: June 15, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Shinichiro Kawakami, Hiroshi Mizunoura, Yohei Sano, Takashi Yamauchi, Masashi Enomoto
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Patent number: 10955743Abstract: There is provided a substrate processing apparatus, including: a film forming part configured to form a metal-containing film on a front surface of a substrate; a film cleaning part configured to clean the metal-containing film formed on a peripheral edge portion of the substrate; and a controller. The controller is configured to control the film forming part so as to form the metal-containing film on the front surface of the substrate, and control the film cleaning part so as to supply a first chemical liquid and a second chemical liquid.Type: GrantFiled: April 5, 2019Date of Patent: March 23, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroshi Mizunoura, Yohei Sano, Shinichiro Kawakami
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Publication number: 20200279736Abstract: A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.Type: ApplicationFiled: October 22, 2018Publication date: September 3, 2020Inventors: Takashi YAMAUCHI, Shinichiro KAWAKAMI, Masashi ENOMOTO
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Patent number: 10732508Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.Type: GrantFiled: July 8, 2019Date of Patent: August 4, 2020Assignee: Tokyo Electron LimitedInventors: Shinichiro Kawakami, Hiroshi Mizunoura
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Publication number: 20200233308Abstract: A substrate processing apparatus includes a film forming processing unit configured to form a metal-containing resist film on a substrate; a heat treatment unit configured to perform a heating processing on the substrate on which the film is formed and in which an exposure processing is performed on the film; a developing processing unit configured to perform a developing processing on the film formed on the substrate on which the heating processing is performed; and an adjustment controller configured to reduce a difference between substrates in an amount of water that reacts in the film formed on the substrate during the heating processing.Type: ApplicationFiled: January 21, 2020Publication date: July 23, 2020Inventors: Shinichiro Kawakami, Hiroshi Mizunoura, Yohei Sano, Takashi Yamauchi, Masashi Enomoto
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Patent number: 10656526Abstract: A thermal treatment apparatus performs a thermal treatment on a metal-containing film formed on a substrate. The thermal treatment apparatus includes a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film. At the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.Type: GrantFiled: November 28, 2017Date of Patent: May 19, 2020Assignee: Tokyo Electron LimitedInventors: Yohei Sano, Shinichiro Kawakami, Masashi Enomoto, Takahiro Shiozawa, Keisuke Yoshida, Tomoya Onitsuka
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Patent number: 10603964Abstract: A back surface part (13) is arranged on an inner surface (35) facing an inner side of a rim flange part (32) in a tire width direction (H) or arranged closer to the inner side in the tire width direction (H) than the inner surface (35), in a no-load reference state where a pneumatic tire (10) is mounted on an applied rim (30) and the internal pressure of the pneumatic tire (10) is set to atmospheric pressure, and a flat surface part (20) extending linearly along a tire radial direction (R) in the reference state is formed in a connecting portion of the back surface part (13) connected with a heel part (14), thereby making it possible to prevent a large force from acting thereon from the applied rim (30) and to improve uniformity.Type: GrantFiled: February 12, 2014Date of Patent: March 31, 2020Assignee: BRIDGESTONE CORPORATIONInventors: Shinichiro Kawakami, Hiroshi Kawabe
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Publication number: 20190332013Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.Type: ApplicationFiled: July 8, 2019Publication date: October 31, 2019Applicant: Tokyo Electron LimitedInventors: Shinichiro KAWAKAMI, Hiroshi MIZUNOURA
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Publication number: 20190317407Abstract: There is provided a substrate processing apparatus, including: a film forming part configured to form a metal-containing film on a front surface of a substrate; a film cleaning part configured to clean the metal-containing film formed on a peripheral edge portion of the substrate; and a controller. The controller is configured to control the film forming part so as to form the metal-containing film on the front surface of the substrate, and control the film cleaning part so as to supply a first chemical liquid and a second chemical liquid.Type: ApplicationFiled: April 5, 2019Publication date: October 17, 2019Inventors: Hiroshi MIZUNOURA, Yohei SANO, Shinichiro KAWAKAMI
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Patent number: 10394125Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.Type: GrantFiled: September 22, 2017Date of Patent: August 27, 2019Assignee: Tokyo Electron LimitedInventors: Shinichiro Kawakami, Hiroshi Mizunoura
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Patent number: 10139732Abstract: A coating and developing apparatus 2 includes a first protection processing unit U01, a film forming unit U02, a first cleaning processing unit U03 and a control unit U08. The control unit U08 is configured to control the first protection processing unit U01 to form a first protective film on a peripheral portion Wc of a wafer W, control the film forming unit U02 to form a resist film on a front surface Wa of the wafer W, control the first cleaning processing unit U03 to supply a first cleaning liquid for removing the resist film to the peripheral portion Wc, control the first cleaning processing unit U03 to supply a second cleaning liquid for removing a metal component to the peripheral portion Wc, and control the first cleaning processing unit U03 to supply a third cleaning liquid for removing the first protective film PF1 to the peripheral portion Wc.Type: GrantFiled: March 30, 2018Date of Patent: November 27, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Shinichiro Kawakami, Hiroshi Mizunoura, Shinichi Hatakeyama