Abstract: A semiconductor integrated circuit for a regulator includes an opening error detecting circuit detecting an opened state of an output terminal; a short-circuiting error detecting circuit detecting a short-circuiting state thereof; a first output terminal outputting a result detected by the opening error detecting circuit to an external unit; a second output terminal outputting a result detected by the short-circuiting error detecting circuit thereto; and a thermal shutdown circuit detecting the temperature of a semiconductor substrate and turns off the voltage control transistor if the detected temperature of the semiconductor substrate exceeds a predetermined temperature. A signal indicating the logic sum of an output signal of the thermal shutdown circuit and that of the short-circuiting error detecting circuit is outputted from the second output terminal such that the output signal of the opening error detecting circuit is not blocked based on the output signal of the thermal shutdown circuit.

Abstract: A semiconductor integrated circuit for a regulator includes the following: a voltage controlling transistor; a controlling circuit; a first and second transistor; a first external terminal to connect a current voltage converting element; a first and second voltage comparing circuit which compares a converted voltage with a predetermined comparison voltage and determines which is large or small; and a first and second output terminal which externally outputs a result of comparison by the first and second voltage comparing circuit, respectively. When a current larger than a predetermined open-circuit abnormality detecting current value flows in the first transistor, output of the first voltage comparing circuit is inverted. When a current larger than a predetermined short-circuit abnormality detecting current value flows in the second transistor, output of the second voltage comparing circuit is inverted.

Abstract: A semiconductor integrated circuit for a regulator includes an opening error detecting circuit detecting an opened state of an output terminal; a short-circuiting error detecting circuit detecting a short-circuiting state thereof; a first output terminal outputting a result detected by the opening error detecting circuit to an external unit; a second output terminal outputting a result detected by the short-circuiting error detecting circuit thereto; and a thermal shutdown circuit detecting the temperature of a semiconductor substrate and turns off the voltage control transistor if the detected temperature of the semiconductor substrate exceeds a predetermined temperature. A signal indicating the logic sum of an output signal of the thermal shutdown circuit and that of the short-circuiting error detecting circuit is outputted from the second output terminal such that the output signal of the opening error detecting circuit is not blocked based on the output signal of the thermal shutdown circuit.

Abstract: A semiconductor integrated circuit for a regulator includes the following: a voltage controlling transistor; a controlling circuit; a first and second transistor; a first external terminal to connect a current voltage converting element; a first and second voltage comparing circuit which compares a converted voltage with a predetermined comparison voltage and determines which is large or small; and a first and second output terminal which externally outputs a result of comparison by the first and second voltage comparing circuit, respectively. When a current larger than a predetermined open-circuit abnormality detecting current value flows in the first transistor, output of the first voltage comparing circuit is inverted. When a current larger than a predetermined short-circuit abnormality detecting current value flows in the second transistor, output of the second voltage comparing circuit is inverted.

Abstract: An output device includes an output transistor that outputs an output current, a first driver that drives the output transistor so that a feedback voltage of an output voltage of the output transistor is in agreement with a reference voltage, an RC circuit that has a capacitor connected to the ground and a resistor connected in series to the capacitor, and a second driver that drives the output transistor to increase the output current when a potential difference between ends of the resistor, generated by the feedback voltage supplied between ends of the RC circuit, is increased by a decrease of the output voltage.

Abstract: Disclosed is a low voltage detection circuit. The low voltage detection circuit includes, a voltage comparison circuit, an output stage, an electric current circuit, and a judgment circuit. When the voltage comparison circuit detects that the voltage of the detection target is a predetermined voltage value or less, an output state of the output stage is promptly changed. When the voltage comparison circuit detects that the voltage of the detection target is a predetermined voltage value or more, the output state of the output stage is changed after a delay time obtained by the electric current circuit.

Abstract: A current limiting circuit for limiting an output current in response to a control current includes a detection circuit to detect a detection voltage responsive to an output voltage, and a control current generating circuit to generate a control current responsive to the detection voltage, wherein the control current generating circuit includes a first transistor through which the control current flows, a second transistor that becomes conductive upon a voltage responsive to an amount of the control current being greater than a predetermined voltage above the detection voltage, and a resistor connecting between a base and an emitter of the second transistor to raise a potential at the base of the second transistor above a predetermined level, wherein the amount of the control current flowing through the first transistor decreases as an amount of a current flowing through the second transistor increases.

Abstract: Disclosed is a low voltage detection circuit. The low voltage detection circuit includes, a voltage comparison circuit, an output stage, an electric current circuit, and a judgment circuit. When the voltage comparison circuit detects that the voltage of the detection target is a predetermined voltage value or less, an output state of the output stage is promptly changed. When the voltage comparison circuit detects that the voltage of the detection target is a predetermined voltage value or more, the output state of the output stage is changed after a delay time obtained by the electric current circuit.

Abstract: A current limiting circuit for limiting an output current in response to a control current includes a detection circuit to detect a detection voltage responsive to an output voltage, and a control current generating circuit to generate a control current responsive to the detection voltage, wherein the control current generating circuit includes a first transistor through which the control current flows, a second transistor that becomes conductive upon a voltage responsive to an amount of the control current being greater than a predetermined voltage above the detection voltage, and a resistor connecting between a base and an emitter of the second transistor to raise a potential at the base of the second transistor above a predetermined level, wherein the amount of the control current flowing through the first transistor decreases as an amount of a current flowing through the second transistor increases.

Abstract: The object is to stabilize the dispersion of a conductive additive in a composition for a battery without deteriorating the conducting property of the conductive additive, and to thereby improve the battery performance of a battery produced by using the composition. Disclosed is a composition for a battery, which comprises: at least one dispersing agent selected from an organic dye derivative having a basic functional group, an anthraquinone derivative having a basic functional group, an acridone derivative having a basic functional group and a triazine derivative having a basic functional group; a carbon material as a conductive additive; and optionally an acid, a solvent, a binder, and a positive electrode active material or a negative electrode active material.

Abstract: An output device includes an output transistor that outputs an output current, a first driver that drives the output transistor so that a feedback voltage of an output voltage of the output transistor is in agreement with a reference voltage, an RC circuit that has a capacitor connected to the ground and a resistor connected in series to the capacitor, and a second driver that drives the output transistor to increase the output current when a potential difference between ends of the resistor, generated by the feedback voltage supplied between ends of the RC circuit, is increased by a decrease of the output voltage.

Abstract: A composition for a battery containing an electroconductive assistant improves battery performance of a battery produced using this composition as a result of achieving dispersion stabilization without inhibiting electroconductivity of the electroconductive assistant.

Abstract: A composition for a battery containing an electroconductive assistant improves battery performance of a battery produced using this composition as a result of achieving dispersion stabilization without inhibiting electroconductivity of the electroconductive assistant.

Abstract: There are disclosed an organic electroluminescent (EL) device composition that includes a compound (A) having a perylene ring and a compound (B) having a diketopyrrolopyrrole skeleton, and an organic EL device that includes a pair of electrodes consisting of an anode and a cathode, and one or more organic layers including a light-emitting layer formed between the electrodes, at least one of the organic layers being a layer formed from the organic EL device composition. Furthermore, there are disclosed an organic EL device composition that includes a compound (C) having, as a solid film, a fluorescence spectrum peak wavelength of 550 nm or longer, and a compound (D) having, as a solid film in which Compound (D) is contained at 5 wt % in Compound (C), an area at a wavelength of 600 nm or shorter in a fluorescence spectrum region of 500 to 800 nm of 20% or less of the entire area, and an organic EL device including a light-emitting layer formed from this composition.

Abstract: The present invention relates to a leadless surface-mount resin-sealing semiconductor device and a manufacturing method thereof; in a semiconductor device comprising a semiconductor element, a resin package sealing this semiconductor element, a terminal formed on a mount side of this resin package so as to protrude thereon, and a wire electrically connecting this terminal and an electrode pad on the semiconductor element to each other, a heat sink dissipating heat generated in the semiconductor element is provided on an undersurface of the semiconductor element so as to improve a heat-dissipation property.

Abstract: The present invention relates to a leadless surface-mount resin-sealing semiconductor device and a manufacturing method thereof; in a semiconductor device comprising a semiconductor element, a resin package sealing this semiconductor element, a terminal formed on a mount side of this resin package so as to protrude thereon, and a wire electrically connecting this terminal and an electrode pad on the semiconductor element to each other, a heat sink dissipating heat generated in the semiconductor element is provided on an undersurface of the semiconductor element so as to improve a heat-dissipation property.

Abstract: Compounds for organic EL devices which emit light of red, have a high light emission brightness and have a long lifetime of light emission, and organic EL devices using the above compounds, the light-emitting materials being compounds of the formula [1], wherein each of Ar3 to Ar10 is independently a substituted or non-substituted aromatic monocyclic group, a substituted or non-substituted fused polycyclic group or a substituted or non-substituted aromatic heterocyclic group, provided that Ar3 and Ar4 may integrally bond to each other, that Ar5 and Ar6 may integrally bond to each other, that Ar7 and Ar8 may integrally bond to each other, and that Ar9 and Ar10 may integrally bond to each other.

Abstract: A semiconductor device and a method of producing the same are provided. The semiconductor device includes: a semiconductor chip; a resin package which seals the semiconductor chip; signal passages which guide the signal terminals of the semiconductor chip outward from the resin package; a grounding metal film in contact with the bottom surface of the semiconductor chip; and a grounding passage which is connected to the grounding metal film and guided outward from the resin package.

Abstract: There is provided a method for fabricating semiconductor devices including resin packages sealing semiconductor elements and external connection terminals respectively resin projections formed on the resin packages and metallic film parts provided to the resin projections. The semiconductor elements are mounted to a lead frame having recess portions located in positions corresponding to positions of the resin projections, metallic film parts being provided in the recess portions. The semiconductor elements are electrically connected to the metallic film parts. The resin packages that seal the semiconductor elements and gate portions are integrally formed with the resin packages. The lead frame is etched so that the resin packages are separated from the lead frame together with the metallic layer parts. The resin packages are attached to an adhesive tape provided to a frame and being used as a carrier.