Patents by Inventor Shinichiro Nagai

Shinichiro Nagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11971342
    Abstract: The sample preparation apparatus includes a measurement unit configured to measure a sample containing particles acquired from a sample container and detect measurement target particles in the sample, a sample preparation unit capable of adjusting the concentration of measurement target particles in a sample acquired from a sample container and configured to prepare a measurement sample by mixing a sample and any of a plurality of types of particle detection reagents including a particle labeling substance, and a control unit for controlling the sample preparation unit so as to generate concentration information of the measurement target particles in the sample in the sample container based on the measurement data of the measurement unit and adjust the concentration of the measurement target particles in the sample acquired from the sample container according to the generated concentration information and the type of particle detection reagent used for preparing the measurement sample.
    Type: Grant
    Filed: December 6, 2021
    Date of Patent: April 30, 2024
    Assignee: SYSMEX CORPORATION
    Inventors: Takaaki Nagai, Shinichiro Oguni, Tomohiro Tsuji
  • Patent number: 11394288
    Abstract: A negative voltage generation circuit 200 includes a first DC voltage source 201 having a positive terminal connected to a first node N1 (Vin), a first diode 202 having a cathode connected to a negative terminal of the first DC voltage source 201 and an anode connected to an output terminal of a first negative voltage VC1 (fourth node N4), and a first capacitor 204 having a first terminal connected to an output terminal of the first negative voltage VC1 and a second terminal connected to a second node N2 (Vs_high), so as to supply the first negative voltage VC1 to a first driver 20 that performs switching control of a first NMOSFET 11 (first switch element) connected between the first node N1 (Vin) and the second node N2 (Vs_high).
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: July 19, 2022
    Assignee: Rohm Co., Ltd.
    Inventors: Yusuke Nakakohara, Yuta Okawauchi, Ken Nakahara, Shinichiro Nagai, Yuuki Ootabara
  • Publication number: 20200350814
    Abstract: A negative voltage generation circuit 200 includes a first DC voltage source 201 having a positive terminal connected to a first node N1 (Vin), a first diode 202 having a cathode connected to a negative terminal of the first DC voltage source 201 and an anode connected to an output terminal of a first negative voltage VC1 (fourth node N4), and a first capacitor 204 having a first terminal connected to an output terminal of the first negative voltage VC1 and a second terminal connected to a second node N2 (Vs_high), so as to supply the first negative voltage VC1 to a first driver 20 that performs switching control of a first NMOSFET 11 (first switch element) connected between the first node N1 (Vin) and the second node N2 (Vs_high).
    Type: Application
    Filed: December 11, 2018
    Publication date: November 5, 2020
    Applicant: ROHM CO., LTD.
    Inventors: Yusuke NAKAKOHARA, Yuta OKAWAUCHI, Ken NAKAHARA, Shinichiro NAGAI, Yuuki OOTABARA
  • Publication number: 20200103759
    Abstract: An exposure method for stepwise moving a rectangular mask and a relative position of a substrate includes first shot exposure in which the mask is located on a first region of the substrate, coordinates of two points on one side of the mask are detected, the mask is aligned using the coordinates, and then a first shot is exposed, second shot exposure in which the mask is located on a second region of the substrate, coordinates of two points on one side of the mask are detected, the mask is aligned using the coordinates, and then a second shot is exposed, and third shot exposure in which the mask is located on a third region of the substrate, coordinates of two points on one side of the mask are detected, the mask is aligned using the coordinates, and then a third shot is exposed.
    Type: Application
    Filed: October 1, 2019
    Publication date: April 2, 2020
    Inventors: Seok Kyu YOON, Shinichiro NAGAI
  • Patent number: 5977259
    Abstract: A thermoplastic elastomer composition containing 100 wt. parts, in total, of an ethylene-.alpha.-olefin copolymer rubber and a polyolefin resin, and 0.1 to 150 wt. parts of at least one hydrogenated diene polymer having a hydrogenation degree of at least 70% selected from the group consisting of hydrogenated conjugated diene polymers and hydrogenated products of random copolymers comprising conjugated dienes and aromatic vinyl compounds in which the content of the aromatic vinyl compound units is 25 wt. % or less, in which the composition has a complex dynamic viscosity .eta.*(1) of 1.5.times.10.sup.5 poise or less, and a Newtonian viscosity index n of 0.67 or less. This composition provides molded articles which are not whitened on bending, and has good flexibility.
    Type: Grant
    Filed: December 22, 1997
    Date of Patent: November 2, 1999
    Assignee: Sumitomo Chemical Company, Ltd.
    Inventors: Hiroyuki Sugimoto, Yoshihiro Nakatsuji, Satoru Moritomi, Shinichiro Nagai, Yuji Gotoh
  • Patent number: 5706081
    Abstract: Virtually all of the light reflected from an object to be inspected is made incident upon a focusing lens 7, a quantity of light in a regularly reflected light region on an plane P1 where an image is formed by a lens 7 is detected by a photodiode 8, while a quantity of light in a peripherally scattered light region is detected by a photodiode 9. If the quantity of light received (VDET1) in the regularly reflected light region is lower than a first reference value (VREF1) (S1=1), and the quantity of light received (VDET2) in the peripheral scattered light region is higher than a second reference value (VREF2) (S2=1), a determination is made that a defect is present.
    Type: Grant
    Filed: May 7, 1997
    Date of Patent: January 6, 1998
    Assignee: NSK Ltd.
    Inventors: Toshio Fukasawa, Masami Eishima, Shinichiro Nagai, Junichi Ono