Patents by Inventor Shinichiro NOZAKI

Shinichiro NOZAKI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10892597
    Abstract: A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: January 12, 2021
    Assignee: PANASONIC CORPORATION
    Inventors: Hiroyuki Hagino, Osamu Imafuji, Shinichiro Nozaki
  • Publication number: 20200412102
    Abstract: A semiconductor light emitting device includes a substrate, and an array including three or more light emitting elements which are aligned above and along a main surface of a substrate and each emit light. The light emitting elements each include a clad layer of a first conductivity type, an active layer containing In, and a clad layer of a second conductivity type disposed above the substrate sequentially from the substrate. Among the light emitting elements, the compositional ratio of In in the active layer is smaller in the light emitting element located in a central area in an alignment direction than that in the light emitting elements located in both end areas in the alignment direction.
    Type: Application
    Filed: December 19, 2018
    Publication date: December 31, 2020
    Inventors: Shinichiro NOZAKI, Shinichi TAKIGAWA
  • Publication number: 20200227895
    Abstract: Provided is a semiconductor laser element including: a substrate; and a laser array section located above the substrate and having a plurality of light emitting parts which are arranged next to each other and which emit laser beams, wherein when the wavelengths of the laser beams respectively emitted from the plurality of light emitting parts are plotted in correspondence with the positions of the plurality of light emitting parts, among a plurality of points respectively corresponding to the wavelengths plotted, the point with an extreme value is not located at a position corresponding to the center of the laser array section and is located at a position corresponding to a place separated from the center of the laser array section.
    Type: Application
    Filed: July 10, 2018
    Publication date: July 16, 2020
    Inventors: Shinichi TAKIGAWA, Shinichiro NOZAKI
  • Publication number: 20200220331
    Abstract: A semiconductor light-emitting element includes: an n-type cladding layer formed of a nitride semiconductor; an active layer which is arranged above the n-type cladding layer and formed of a nitride semiconductor; a p-type cladding layer arranged above the active layer and formed of a nitride semiconductor; and a p-side electrode arranged above the p-type cladding layer, wherein the p-type cladding layer contains hydrogen, and a first concentration of the hydrogen at a center of the p-type cladding layer in a region below the p-side electrode is lower than a second concentration of the hydrogen at a position located on a side closer to an outer edge than to the center in the region below the p-side electrode.
    Type: Application
    Filed: August 2, 2018
    Publication date: July 9, 2020
    Inventors: Shinichiro NOZAKI, Takuma KATAYAMA
  • Publication number: 20200185879
    Abstract: A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.
    Type: Application
    Filed: January 24, 2020
    Publication date: June 11, 2020
    Inventor: Shinichiro NOZAKI
  • Patent number: 10581218
    Abstract: A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: March 3, 2020
    Assignee: Panasonic Corporation
    Inventor: Shinichiro Nozaki
  • Publication number: 20190245322
    Abstract: A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO2. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.
    Type: Application
    Filed: June 28, 2017
    Publication date: August 8, 2019
    Inventors: Hiroyuki HAGINO, Osamu IMAFUJI, Shinichiro NOZAKI
  • Publication number: 20190021158
    Abstract: A laser-driven light source device includes a laser oscillation unit configured to emit laser light, and a plasma vessel configured to contain and seal a discharge medium therein. The laser-driven light source device also includes an optical system configured to condense the laser light emitted from the laser oscillation unit, and direct the laser light to an inside of the plasma vessel to generate a plasma. The laser oscillation unit includes a control unit configured to perform an on/off control on the generation of the laser light to modulate an output of the laser light such that the laser light is generated during an on-time of several ?sec to several msec and the laser light is not generated during an off-time. The off-time is decided such that the plasma in the plasma vessel does not disappear.
    Type: Application
    Filed: July 10, 2018
    Publication date: January 17, 2019
    Applicant: USHIO DENKI KABUSHIKI KAISHA
    Inventor: Shinichiro NOZAKI
  • Patent number: 10141720
    Abstract: A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1?xN containing no Indium, where 0?x<1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp?0.25 ?m and dn?dp.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: November 27, 2018
    Assignee: PANASONIC CORPORATION
    Inventors: Masao Kawaguchi, Osamu Imafuji, Shinichiro Nozaki, Hiroyuki Hagino
  • Publication number: 20180269650
    Abstract: A semiconductor light emitting device includes a mount section having an insulating property connected to a heat sink, a plurality of semiconductor laser elements disposed on the mount section, and a heat radiation block having an insulating property disposed on the plurality of semiconductor laser elements. A first wiring made of a metal is disposed on an upper surface of the mount section, and a second wiring made of a metal is disposed on a lower surface of the heat radiation block, a part of the second wiring being electrically connected to the first wiring. By electrically connecting the first wiring and the second wiring to each of the plurality of semiconductor laser elements, the plurality of semiconductor laser elements are connected in series, and have a same polarity with each other at a side that each of the plurality of semiconductor laser elements is connected to the first wiring.
    Type: Application
    Filed: May 22, 2018
    Publication date: September 20, 2018
    Inventor: SHINICHIRO NOZAKI
  • Publication number: 20180131161
    Abstract: A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlxGa1?xN containing no Indium, where 0 ?x<1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp?0.25 ?m and dn?dp.
    Type: Application
    Filed: January 9, 2018
    Publication date: May 10, 2018
    Inventors: MASAO KAWAGUCHI, Osamu Imafuji, Shinichiro Nozaki, Hiroyuki Hagino
  • Patent number: 9214788
    Abstract: A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)>Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×1018 cm?3, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: December 15, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Masao Kawaguchi, Hideki Kasugai, Shinichiro Nozaki
  • Patent number: 9152055
    Abstract: An optical irradiation apparatus includes: a light-emitting device configured to emit a plurality of light beams whose optical axes extend in a substantially identical direction; a collimator part configured to convert the light beams into parallel light beams; and a light condensing part configured to collect the parallel light beams. The light-emitting device includes a super luminescent diode array in which a plurality of waveguides are provided on a substrate. Each of the waveguides has a light-emitting facet including a light emission point from which an associated one of the light beams is emitted. The light emission points are located in a plane. The plane including the light emission points is orthogonal to a direction of an optical axis of the collimator part.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: October 6, 2015
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Shinichiro Nozaki, Kazuhiko Yamanaka, Shinichi Takigawa, Takuma Katayama, Yosuke Mizuyama
  • Publication number: 20150146756
    Abstract: A semiconductor light emitting element includes an n-type light guide layer containing a group III nitride semiconductor, an active layer, and a p-type light guide layer, in which the n-type light guide layer includes a semiconductor superlattice layer which is a stack of superlattice layers, the semiconductor superlattice layer having a structure in which group III nitride semiconductors A and group III nitride semiconductors B are alternately stacked, each of the semiconductors A and each of the semiconductors B being stacked in each of the superlattice layers, a relationship Eg (A)>Eg (B) holds, the semiconductor A is a film containing AlInN, and the film contains oxygen (O) at a concentration of at least 1×1018 cm?3, the semiconductor A has a film thickness of at most 5 nm, and a current is injected in a stacking direction of the superlattice layers.
    Type: Application
    Filed: December 22, 2014
    Publication date: May 28, 2015
    Inventors: Masao KAWAGUCHI, Hideki KASUGAI, Shinichiro NOZAKI
  • Patent number: 9006778
    Abstract: A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the light emitting layer, wherein each protrusion has a bottom made of a material or composition having a thermal expansion coefficient larger than the thermal expansion coefficient of the material or composition of the first nitride semiconductor layer.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: April 14, 2015
    Assignee: Panasonic Intellectual Property Mangement Co., Ltd.
    Inventors: Shinichiro Nozaki, Toshiyuki Takizawa, Kazuhiko Yamanaka
  • Publication number: 20140050244
    Abstract: A superluminescent diode has, above a substrate, a layered portion including at least a first cladding layer, a luminescent layer, and a second cladding layer in this order, and an optical waveguide having a refractive-index guiding structure is provided in the layered portion. The optical waveguide includes: a first mesa portion formed by processing the second cladding layer into the first mesa portion having a first width; and a second mesa portion formed by processing the first cladding layer, the luminescent layer, and the second cladding layer into the second mesa portion having a second width greater than the first width.
    Type: Application
    Filed: October 29, 2013
    Publication date: February 20, 2014
    Applicant: Panasonic Corporation
    Inventors: Hiroshi OHNO, Kazuhiko YAMANAKA, Kenji ORITA, Shinichiro NOZAKI
  • Publication number: 20120320561
    Abstract: An optical irradiation apparatus includes: a light-emitting device configured to emit a plurality of light beams whose optical axes extend in a substantially identical direction; a collimator part configured to convert the light beams into parallel light beams; and a light condensing part configured to collect the parallel light beams. The light-emitting device includes a super luminescent diode array in which a plurality of waveguides are provided on a substrate. Each of the waveguides has a light-emitting facet including a light emission point from which an associated one of the light beams is emitted. The light emission points are located in a plane. The plane including the light emission points is orthogonal to a direction of an optical axis of the collimator part.
    Type: Application
    Filed: December 22, 2011
    Publication date: December 20, 2012
    Inventors: Shinichiro NOZAKI, Kazuhiko YAMANAKA, Shinichi TAKIGAWA, Takuma KATAYAMA, Yosuke MIZUYAMA