Patents by Inventor Shinichirou Akiyoshi
Shinichirou Akiyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8290015Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.Type: GrantFiled: February 27, 2009Date of Patent: October 16, 2012Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co. Ltd.Inventors: Yasuhiro Watanabe, Kouji Ueyama, Shinichirou Akiyoshi
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Patent number: 8126026Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.Type: GrantFiled: February 27, 2009Date of Patent: February 28, 2012Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventors: Yasuhiro Watanabe, Kouji Ueyama, Shinichirou Akiyoshi
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Patent number: 7724798Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.Type: GrantFiled: October 12, 2004Date of Patent: May 25, 2010Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventors: Yasuhiro Watanabe, Kouji Ueyama, Shinichirou Akiyoshi
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Publication number: 20090161336Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.Type: ApplicationFiled: February 27, 2009Publication date: June 25, 2009Applicants: SANYO ELECTRIC CO., LTD., TOTTORI SANYO ELECTRIC CO., LTD.Inventors: Yasuhiro WATANABE, Kouji UEYAMA, Shinichirou AKIYOSHI
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Publication number: 20090161718Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.Type: ApplicationFiled: February 27, 2009Publication date: June 25, 2009Applicants: SANYO ELECTRIC CO., LTD, TOTTORI SANYO ELECTRIC CO., LTD.Inventors: Yasuhiro Watanabe, Kouji Ueyama, Shinichirou Akiyoshi
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Patent number: 7339194Abstract: In a semiconductor laser device 10 including a semiconductor laser element 14, a frame 12 having a front face on which the semiconductor laser element 14 is placed, and a resin molded portion 15 that covers the front and back faces of the frame 12, on a front face side of the frame 12, the semiconductor laser element 14 is enclosed with an enclosure portion 15b of the resin molded portion 15, and the resin molded portion 15 has an open front serving as a laser beam emission window 15a. On a back face side of the frame 12, there is provided an exposed portion 16e enclosed with a U-shaped enclosure portion 15d of the resin molded portion 15, the exposed portion 16e where the frame 12 is exposed to the outside.Type: GrantFiled: October 12, 2004Date of Patent: March 4, 2008Assignees: Sanyo Electric Co., Ltd., Tottori Sanyo Electric Co., Ltd.Inventors: Yasuhiro Watanabe, Kouji Ueyama, Shinichirou Akiyoshi
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Publication number: 20070063212Abstract: In a semiconductor laser device 10 including a semiconductor laser element 14, a frame 12 having a front face on which the semiconductor laser element 14 is placed, and a resin molded portion 15 that covers the front and back faces of the frame 12, on a front face side of the frame 12, the semiconductor laser element 14 is enclosed with an enclosure portion 15b of the resin molded portion 15, and the resin molded portion 15 has an open front serving as a laser beam emission window 15a. On a back face side of the frame 12, there is provided an exposed portion 16e enclosed with a U-shaped enclosure portion 15d of the resin molded portion 15, the exposed portion 16e where the frame 12 is exposed to the outside.Type: ApplicationFiled: October 12, 2004Publication date: March 22, 2007Applicants: SANYO ELECTRIC CO., LTD., tottori sanyo electric co., lTD.Inventors: Yasuhiro Watanabe, Kouji Ueyama, Shinichirou Akiyoshi
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Publication number: 20060285476Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.Type: ApplicationFiled: October 12, 2004Publication date: December 21, 2006Inventors: Yasuhiro Watanabe, Kouji Ueyama, Shinichirou Akiyoshi