Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

Abstract: Disclosed are an air purifying apparatus and a method for controlling the same.

Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

Abstract: A display device includes an active layer in a display area, a first gate insulation layer on the active layer, a first gate line on the first gate insulation layer in the display area, a first signal line in the same layer as the first gate line in a non-display area and including the same material as that of the first gate line including molybdenum, a second gate insulation layer on the first gate line and the first signal line, a second gate line on the second gate insulation layer in the display area, and a second signal line in the same layer as the second gate line in the non-display area and including the same material as that of the second gate line including aluminum or an aluminum alloy. A width of the first signal line is greater than a width of the second signal line.

Abstract: A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.

Abstract: A display device includes an active layer in a display area, a first gate insulation layer on the active layer, a first gate line on the first gate insulation layer in the display area, a first signal line in the same layer as the first gate line in a non-display area and including the same material as that of the first gate line including molybdenum, a second gate insulation layer on the first gate line and the first signal line, a second gate line on the second gate insulation layer in the display area, and a second signal line in the same layer as the second gate line in the non-display area and including the same material as that of the second gate line including aluminum or an aluminum alloy. A width of the first signal line is greater than a width of the second signal line.

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

Abstract: A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.

Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

Abstract: A display device includes conductive layers including wires and conductive patterns in a display area and a pad area, a via layer on the conductive layers, a first electrode and a second electrode on the via layer in the display area and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, light emitting elements on the first electrode and the second electrode spaced apart from each other on the first insulating layer, and a first connection electrode on the first electrode and electrically contacting the light emitting elements, and a second connection electrode on the second electrode and electrically contacting the light emitting elements, each of the conductive layers includes a first metal layer and a second metal layer on the first metal layer, and the second metal layer contains copper and has a grain size of about 155 nm or less.

Abstract: A display device includes in order along a thickness direction of the display device an active pattern including a first region, a second region spaced apart from the first region in a first direction, and a third region between the first region and the second region, a first capacitor electrode which overlaps the third region of the active pattern to define portions of a driving transistor, and a second capacitor electrode which overlaps the first capacitor electrode and defines a groove corresponding to a portion of the first capacitor electrode.

Abstract: A display panel includes a base substrate, a pixel including a thin film transistor and a display element, a first signal line connected to the pixel, and a second signal line disposed on a layer different from the first signal line. At least one of the first signal line and the second signal line includes a lower layer including a conductive material and an upper layer disposed on the lower layer and including a conductive material. The upper layer has an etch selectivity in a range equal to or greater than about 0.5 and equal to or smaller than about 3 with respect to the lower layer.

Abstract: A display device comprises first and second electrodes extending in one direction on a substrate, the first and second electrodes being spaced apart from each other, an organic layer on the first and second electrodes, the organic layer including a plurality of conductive regions and an insulating region, light-emitting elements on the organic layer and on the first and second electrodes, and a first connecting electrode coupled to first end portions of the light-emitting elements and one of the plurality of conductive regions, and a second connecting electrode coupled to second end portions of the light-emitting elements and another one of the plurality of conductive regions, wherein the organic layer includes PEDOT:PSS, and a surface roughness of the insulating region is greater than a surface roughness of the plurality of conductive regions.

Abstract: A display device includes a substrate including a display area and a pad area, a transistor including an active layer disposed in the display area, a gate electrode disposed on the active layer, and a source electrode and a drain electrode disposed on the gate electrode, a fan-out line disposed in the pad area, an auxiliary line disposed on the fan-out line, a first interlayer insulating layer disposed between the gate electrode and the source electrode and between the fan-out line and the auxiliary line, and a first organic layer disposed between the first interlayer insulating layer and the auxiliary line, wherein the first organic layer does not overlap the display area.

Abstract: A light unit including: a light source; and an optical member that transmits and converts light emitted from the light source, wherein the optical member includes: a light guide; a low refractive index layer that is disposed on the light guide and has a lower refractive index than that of the light guide; a first capping layer that is disposed on the low refractive index layer; and a wavelength conversion layer that is disposed on the first capping layer and includes quantum dots, and the light guide includes a transparent metal oxide.

Abstract: A display device includes an active layer in a display area, a first gate insulation layer on the active layer, a first gate line on the first gate insulation layer in the display area, a first signal line in the same layer as the first gate line in a non-display area and including the same material as that of the first gate line including molybdenum, a second gate insulation layer on the first gate line and the first signal line, a second gate line on the second gate insulation layer in the display area, and a second signal line in the same layer as the second gate line in the non-display area and including the same material as that of the second gate line including aluminum or an aluminum alloy. A width of the first signal line is greater than a width of the second signal line.

Abstract: A connecting structure of a conductive layer includes a first conductive layer, a first insulating layer disposed on the first conductive layer and including a first opening overlapping the first conductive layer, a connecting conductor disposed on the first insulating layer and connected to the first conductive layer through the first opening, an insulator island disposed on the connecting conductor, a second insulating layer disposed on the first insulating layer and including a second opening overlapping the connecting conductor and the insulator island, and a second conductive layer disposed on the second insulating layer and connected to a connecting electrode through the second opening. A sum of a thickness of the first insulating layer and a thickness of the second insulating layer is greater than or equal to 1 ?m, and each of the thicknesses of the first and second insulating layers is less than 1 ?m.

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

Abstract: A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.

Abstract: An OLED display according to an exemplary embodiment includes: a substrate; a gate insulation layer that is disposed on the substrate; and a gate wire that is disposed on the gate insulation layer, and includes a gate electrode, wherein the gate wire includes a single layer of aluminum or an aluminum alloy, and an angle formed by side surfaces of the gate wire and the gate insulation layer is less than 65°.