Patents by Inventor Shinjae Hwang

Shinjae Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TANTALUM DOPED RUTHENIUM LAYERS FOR INTERCONNECTS
    Publication number: 20240071927
    Abstract: Methods of forming interconnects and electronic devices are described. Methods of forming interconnects include forming a tantalum nitride layer on a substrate; forming a ruthenium layer on the tantalum nitride layer; and exposing the tantalum nitride layer and ruthenium layer to a plasma comprising a mixture of hydrogen (H2) and argon (Ar) to form a tantalum doped ruthenium layer thereon. Apparatuses for performing the methods are also described.
    Type: Application
    Filed: August 22, 2023
    Publication date: February 29, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Shinjae Hwang, Feng Chen, Muthukumar Kaliappan, Michael Haverty