Abstract: A new IC package 12 is designed as follows. That is, a circuit block 2 is omitted from an existing IC package 11 including a package 11a having a circuit block 1 and the circuit block 2 which are connected to a plurality of terminals including high-frequency terminals, but the position of a high-frequency terminal connected to the circuit block 1 is never changed. Carried out next is omission of a portion 6, which is associated with the circuit block 2, of the package 11a. This makes it possible to provide (i) a method for designing a small IC package, and (ii) a method for manufacturing the IC package. With the methods, time required for the designing and adjustment of the designing can be shortened.

Abstract: A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO.

Abstract: A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is sandwiched between said pinned layer and said free layer. Sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said spacer layer, and said free layer. Said spacer layer has a CuZn metal alloy which includes an oxide region, said oxide region consisting of an oxide of any of Al, Si, Cr, Ti, Hf, Zr, Zn, and Mg.

Abstract: A magnetic thin film has: a pinned layer whose magnetization direction is fixed with respect to an external magnetic field; a free layer whose magnetization direction is changed in accordance with the external magnetic field; and a non-magnetic spacer layer that is sandwiched between said pinned layer and said free layer, wherein sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said non-magnetic spacer layer, and said free layer. Said non-magnetic spacer layer has a first layer which includes SnO2, and a pair of second layers which are provided to sandwich said first layer, said second layers being made of a material which exhibits a higher corrosion potential than Sn.

Abstract: A thin film magnetic head has: a spin valve having a pinned layer whose magnetization direction is fixed relative to an external magnetic field, a first nonmagnetic intermediate layer which is disposed on said pinned layer, and a free layer whose magnetization direction is changed according to the external magnetic field, said free layer being disposed on said first nonmagnetic intermediate layer; and bias magnetic layers for applying a bias magnetic field to said free layer, said bias magnetic layers being provided on both sides of said spin valve with regard to a track width direction thereof. The pinned layer has a hard magnetic layer, a second nonmagnetic intermediate layer which is disposed on said hard magnetic layer, and a ferromagnetic layer which is disposed on said second nonmagnetic intermediate layer. The bias magnetic layer has a bias antiferromagnetic layer, and a bias ferromagnetic layer which is disposed on said bias antiferromagnetic layer.

Abstract: The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component.

Abstract: The invention provides a giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of said spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc.

Abstract: The invention provides a giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them, wherein the free layer functions such that its magnetization direction changes depending on an external magnetic field, and the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between them, wherein the semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient, wherein the main ingredient zinc oxide contains at least one selected from among oxides containing a trivalent cation of Al2O3, Ga2O3, In2O3, and B2O3, and a tetravalent cation of TiO2.

Abstract: A knee bolster whose load receiving parts absorb load from the knees of seated occupants of various physical sizes is provided. An upper knee bolster and a lower knee bolster are each provided with a load receiving part that receives load from the knees of a seated occupant who moves forward in the direction of vehicle length in the event of a vehicle head-on collision, and a deforming part that moves the load receiving part, which has been deformed by the load, forward in the direction of vehicle length.

Abstract: An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer includes a nonmagnetic intermediate layer, and a first magnetic layer and a second magnetic layer disposed to sandwich the intermediate layer. The first and second magnetic layers are antiferromagnetically exchange-coupled to each other through RKKY interaction.

Abstract: A magnetoresistive effect (MR) element, a thin-film magnetic head having the MR element, a method for manufacturing the MR element, and a method for manufacturing the thin-film magnetic head are disclosed. The MR element, which uses electric current in a direction perpendicular to layer planes, includes a lower electrode layer, a MR multilayered structure formed on the lower electrode layer, a magnetic domain controlling bias layer that is disposed on both sides of the MR multilayered structure along the track-width direction and is made of a material at least partially including an hcp structure, a metal layer made of a material having a bcc structure formed on the magnetic domain controlling bias layer and the MR multilayered structure to cover the magnetic domain controlling bias layer and the MR multilayered structure, and an upper electrode layer formed on the metal layer.

Abstract: In an MR element, each of a pinned layer and a free layer includes a Heusler alloy layer. The Heusler alloy layer has two surfaces that are quadrilateral in shape and face toward opposite directions. The Heusler alloy layer includes one crystal grain that touches four sides of one of the two surfaces. In a method of manufacturing the MR element, a layered film to be the MR element is formed and patterned, and then heat treatment is performed on the layered film patterned, so that crystal grains included in a film to be the Heusler alloy layer in the layered film grow and one crystal grain that touches four sides of one of the surfaces of the film to be the Heusler alloy layer is thereby formed.

Abstract: A gaming machine has a variable display unit that variably displays symbols and a processor that controls a display made through the variable display unit. The processor controls the variable display unit so as to display one or more variable display groups each including variable display portions in which the symbols are variably displayed. The processor controls a progress of a multiple variable display game which is given through the variable display unit displaying the variable display groups in each of which the symbols are variably displayed.

Abstract: A gaming machine offers a base game and a bonus game, and has a display unit and a processor for controlling the gaming machine. The processor controls the display unit so that the display unit displays selection images at a time after determining that the base game should shift into the bonus game and before the bonus game is started. The processor changes any of the selection images into a corresponding image which corresponds with the selection image in accordance with an input made by a player. The processor determines an execution condition of the bonus game based on displayed corresponding images.

Abstract: In the slot machine 1, when the payout correspondence table 33a of the RAM 33 is changed to the special payout correspondence table 33b, the special payout information 4C, 4D on the basis of the special payout correspondence table 33b is displayed on the sub-display 4, instead of the payout information 4A, 4B on the basis of payout correspondence table 33a. Therefore, till the special payout information 4C, 4D is displayed on the sub-display 4, the player cannot confirm the special payout information 4C, 4D, thus the player cannot predict the payout. As a result, for the player, unexpected feeling of the payout can be raised and interest for games can be improved.

Abstract: A new IC package 12 is designed as follows. That is, a circuit block 2 is omitted from an existing IC package 11 including a package 11a having a circuit block 1 and the circuit block 2 which are connected to a plurality of terminals including high-frequency terminals, but the position of a high-frequency terminal connected to the circuit block 1 is never changed. Carried out next is omission of a portion 6, which is associated with the circuit block 2, of the package 11a. This makes it possible to provide (i) a method for designing a small IC package, and (ii) a method for manufacturing the IC package. With the methods, time required for the designing and adjustment of the designing can be shortened.

Abstract: A wireless communication circuit in accordance with the present invention, is the wireless communication circuit having an amplifier for amplifying a signal, includes an amplification route in which the signal passes through the amplifier; a bypass route for bypassing the amplifier; and a route-selector for selecting one of the amplification route and the bypass route. This arrangement prevents an amplification of a signal, being transmitted or being received, when a communication counterpart is in a close distance, thereby reducing an unnecessary power consumption.

Abstract: A knee bolster whose load receiving parts absorb load from the knees of seated occupants of various physical sizes is provided. An upper knee bolster and a lower knee bolster are each provided with a load receiving part that receives load from the knees of a seated occupant who moves forward in the direction of vehicle length in the event of a vehicle head-on collision, and a deforming part that moves the load receiving part, which has been deformed by the load, forward in the direction of vehicle length.

Abstract: A wireless communication apparatus is made up of a transmission circuit block including an antenna that is laid out such that the transmission lines, i.e., the sum of the distance connecting respective circuit blocks between an output terminal of the transmission power amplifier to an input/output terminal of the antenna is shorter than the transmission line, i.e., the sum of the distance connecting respective circuit blocks between an input terminal of a transmission power amplifier and an output terminal of a RFIC disposed at a preceding stage of the transmission power amplifier. This arrangement realizes a wireless communications apparatus ensuring improvement of overall performance of the wireless application without reducing the total transmission loss or improving the performance of individual circuits.

Abstract: A semiconductor device includes a high-frequency-use semiconductor chip having high frequency circuit blocks. The semiconductor chip is mounted on a circuit substrate and electrical connectors are provided for electrically connecting each one of the high frequency circuit blocks in the semiconductor chip to the circuit substrate. The electrical connectors situated adjacent to each other are provided such that the distance between first contacts at which the electrical connectors are electrically connected to the respective high frequency circuit blocks is smaller than the distance between second contacts at which the electrical connectors are electrically connected to the circuit substrate.