Abstract: An electromagnetic wave sensor includes a substrate having transmittance of electromagnetic waves having a specific wavelength, an insulator layer provided on one surface side of the substrate, a thermistor film disposed to have a space between the thermistor film and one surface of the substrate, and a wiring part provided inside or on a surface of the insulator layer and electrically connected to the thermistor film, wherein a transmittance of the electromagnetic waves at a portion facing the thermistor film is relatively higher than a transmittance of the electromagnetic waves at a portion where the wiring part is provided in a layer in which the insulator layer is provided.

Abstract: An electromagnetic wave sensor that limits the influence on bolometer membranes that is caused by heat from a local heat source is provided. Electromagnetic wave sensor has first substrate, second substrate that faces first substrate so as to form inner space between first substrate and second substrate, wherein second substrate transmits infrared rays; a plurality of bolometer membranes that is provided in inner space and that is supported by second substrate; local heat source that is formed in first substrate; first electric connection member that connects first substrate to second substrate; and lead that extends on or in second substrate and that connects first electric connection member to bolometer membrane.

Abstract: A high-frequency device includes a magnetoresistance effect element which includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer positioned between the first and second ferromagnetic layers, a soft magnetic material body which covers at least a part of a periphery of the magnetoresistance effect element from outside in a plan view in a lamination direction of the magnetoresistance effect element, a non-magnetic material body which is positioned between the soft magnetic material body and the first ferromagnetic layer in the plan view in the lamination direction, and a high-frequency line which is connected to or spaced apart from the magnetoresistance effect element. The high-frequency line is configured to input or output a high-frequency current to or from the magnetoresistance effect element, or is configured to apply a high-frequency magnetic field caused by a high-frequency current flowing through the inside to the magnetoresistance effect element.

Abstract: A switch device includes a switch body, which is arranged at the back side of a steering unit, and a lever unit, which is attached to the switch body to allow for switching by a pivotal operation about a first axis, which extends in the axial direction of a steering shaft. The lever unit includes a lever shaft, which extends in a direction intersecting the first axis of the pivotal operation, a lever head, which is arranged at the distal end of the lever shaft and has a larger dimension than the diameter of the lever shaft, and a push operation unit, which allows for switching by a push operation. The push operation unit is arranged so that the operation direction of the push operation is directed toward the first axis.

Abstract: A switch device includes a switch body including a switch contact point, a lever unit pivoted about the switch body to switch the switch contact point between different states, and a guard arranged on a lever shaft of the lever unit and shaped to conceal the switch body at the proximal end of the lever shaft. The lever shaft includes a root portion, which is connected to the switch body, and a bent portion, which is bent and extended from the root portion. The guard is shaped so that the distance to a pivotal center of the lever unit is not constant.

Abstract: A switch device includes a switch body, which is attached to and rotated integrally with an irregularly-shaped steering unit, and a lever unit, which is held pivotally about a switch body. The lever unit includes a lever shaft including a base, which extends in a direction intersecting the steering shaft, and an arm, which is formed integrally with the base and extends in a direction that differs from the direction in which the base extends. The lever unit also includes a lever head at the distal end of the lever shaft, and the lever head extends from the lever shaft in the width direction, which intersects an axial direction.

Abstract: The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.

Abstract: A urea water supply system which performs permission determination by a control device based on a first parameter includes a cooling water temperature sensor, and a control device is configured to be able to store a result of the permission determination, and when a system control is restarted after the system control is stopped and a stop period is elapsed, it performs a shortening setting to shorten a time required for the permission determination based on the determination result stored at a time when the system is stopped and a cooling water temperature immediately after restarting.

Abstract: A heat utilizing device is provided in which the thermal resistance of the wiring layer is increased while an increase in electric resistance of the wiring layer is limited. Heat utilizing device has thermistor whose electric resistance changes depending on temperature; and wiring layer that is connected to thermistor. A mean free path of phonons in wiring layer is smaller than a mean free path of phonons in an infinite medium that consists of a material of wiring layer.

Abstract: An electromagnetic wave sensor that limits the influence on bolometer membranes that is caused by heat from a local heat source is provided. Eelectromagnetic wave sensor has first substrate, second substrate that faces first substrate so as to form inner space between first substrate and second substrate, wherein second substrate transmits infrared rays; a plurality of bolometer membranes that is provided in inner space and that is supported by second substrate; local heat source that is formed in first substrate; first electric connection member that connects first substrate to second substrate; and lead that extends on or in second substrate and that connects first electric connection member to bolometer membrane.

Abstract: A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.

Abstract: A magnetoresistance effect device includes first and second ports, first and second circuit units, and reference potential and DC applying terminals. The first and second circuit units respectively include first and second magnetoresistance effect elements and first and second conductors. In the second conductor, the positional relationship between first and second end faces respectively on the first and opposite conductor sides in the first magnetoresistance effect element with respect to a flowing direction of a direct current flowing inside the first magnetoresistance effect element and the positional relationship between first and second end faces respectively on the second and opposite conductor sides in the second magnetoresistance effect element with respect to a flowing direction of a direct current flowing in the second magnetoresistance effect element are opposite each other.

Abstract: The magnetoresistance effect device includes first and second ports, a first circuit unit and a second circuit unit connected between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, the first circuit unit includes a first magnetoresistance effect element, the second circuit unit includes a second magnetoresistance effect element and a first conductor separated from the second magnetoresistance effect element with an insulating body therebetween and a first end portion of the first conductor is connected to an input side of high frequency current such that high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.

Abstract: A resistive element array circuit includes word lines, bit lines, resistive elements, a selector, a differential amplifier, and a ground terminal. The word lines are coupled to a power supply. The resistive elements are each disposed at an intersection of corresponding one of the word lines and corresponding one of the bit lines. The selector is configured to select one word line and one bit line. The differential amplifier includes a positive input terminal configured to be coupled to the selected one of the bit lines which is selected by the selector, a negative input terminal configured to be coupled to non-selected one of the bit lines which is not selected by the selector and to non-selected one of the word lines which is not selected by the selector, an output terminal being coupled to the negative input terminal. The ground terminal is coupled to the positive input terminal.

Abstract: A magnetoresistance effect device includes a magnetoresistance effect element, and an external magnetic field application unit for applying an external magnetic field to the magnetoresistance effect element. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer. The external magnetic field application unit includes a magnetization retention section and a magnetization setting section. The magnetization setting section has a function of setting a magnetization to be used to generate the external magnetic field into the magnetization retention section by applying a magnetization-setting magnetic field to the magnetization retention section and then stopping the application of the magnetization-setting magnetic field. The magnetization retention section has a function of retaining the set magnetization after the application of the magnetization-setting magnetic field is stopped.

Abstract: A urea water supply system which performs permission determination by a control device based on a first parameter includes a cooling water temperature sensor, and a control device is configured to be able to store a result of the permission determination, and when a system control is restarted after the system control is stopped and a stop period is elapsed, it performs a shortening setting to shorten a time required for the permission determination based on the determination result stored at a time when the system is stopped and a cooling water temperature immediately after restarting.

Abstract: A magnetoresistance effect device includes first and second ports, first and second circuit units, and reference potential and DC applying terminals. The first and second circuit units respectively include first and second magnetoresistance effect elements and first and second conductors. In the second conductor, the positional relationship between first and second end faces respectively on the first and opposite conductor sides in the first magnetoresistance effect element with respect to a flowing direction of a direct current flowing inside the first magnetoresistance effect element and the positional relationship between first and second end faces respectively on the second and opposite conductor sides in the second magnetoresistance effect element with respect to a flowing direction of a direct current flowing in the second magnetoresistance effect element are opposite each other.

Abstract: A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.

Abstract: The magnetoresistance effect device includes first and second ports, a first circuit unit and a second circuit unit connected between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, the first circuit unit includes a first magnetoresistance effect element, the second circuit unit includes a second magnetoresistance effect element and a first conductor separated from the second magnetoresistance effect element with an insulating body therebetween and a first end portion of the first conductor is connected to an input side of high frequency current such that high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.

Abstract: The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.