Patents by Inventor Shinji Himori

Shinji Himori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200312623
    Abstract: A substrate processing apparatus includes a processing chamber that accommodates a substrate, a gas supply having a gas diffusion chamber and a plurality of gas holes that communicates the gas diffusion chamber with the processing chamber, a gas inlet tube that introduces a gas into the gas diffusion chamber of the gas supply, and a gas source connected to the gas inlet tube and supplies the gas to the gas inlet tube. The gas supply has a volume variable device for changing a volume in the gas diffusion chamber.
    Type: Application
    Filed: March 30, 2020
    Publication date: October 1, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazuki MOYAMA, Kazuya NAGASEKI, Shinji HIMORI, Michishige SAITO, Gen TAMAMUSHI
  • Patent number: 10699935
    Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: June 30, 2020
    Assignee: TOKO ELECTRON LIMITED
    Inventors: Shinji Himori, Yoshiyuki Kobayashi, Takehiro Kato, Etsuji Ito
  • Patent number: 10651012
    Abstract: A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: May 12, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akihiro Yokota, Etsuji Ito, Shinji Himori
  • Publication number: 20200144028
    Abstract: A plasma processing apparatus includes a chamber and a substrate support provided in the chamber. A power supply unit is connected to a lower electrode of the substrate support. The power supply unit applies a first DC voltage to the lower electrode during generation of plasma from an etching gas in the chamber. The first DC voltage is a positive DC voltage. The power supply unit applies a second DC voltage to the lower electrode during the generation of plasma from the etching gas in the chamber, to etch the substrate placed on the substrate support. The second DC voltage is a negative DC voltage. The DC voltage output by the power supply unit is continuously switched from the first DC voltage to the second DC voltage.
    Type: Application
    Filed: November 5, 2019
    Publication date: May 7, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Koichi NAGAMI, Kazuya NAGASEKI, Shinji HIMORI
  • Publication number: 20200126770
    Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.
    Type: Application
    Filed: December 20, 2019
    Publication date: April 23, 2020
    Inventors: Koichi Nagami, Kazunobu Fujiwara, Tatsuro Ohshita, Takashi Dokan, Koji Maruyama, Kazuya Nagaseki, Shinji Himori
  • Patent number: 10553407
    Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: February 4, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koichi Nagami, Kazunobu Fujiwara, Tatsuro Ohshita, Takashi Dokan, Koji Maruyama, Kazuya Nagaseki, Shinji Himori
  • Publication number: 20190333741
    Abstract: A plasma processing method includes providing a plasma processing apparatus; supplying radio-frequency waves from a radio-frequency power supply; and applying a negative DC voltage to a lower electrode from the at least one DC power supply. In the applying the DC voltage, the DC voltage is cyclically applied to the lower electrode, and in a state where a frequency defining each cycle in which the DC voltage is applied to the lower electrode is set to be lower than 1 MHz, a ratio occupied by a period during which the DC voltage is applied to the lower electrode in the each cycle is regulated.
    Type: Application
    Filed: April 26, 2019
    Publication date: October 31, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Koichi NAGAMI, Tatsuro OHSHITA, Kazuya NAGASEKI, Shinji HIMORI
  • Publication number: 20190256962
    Abstract: A plasma spraying apparatus includes a supplier configured to carry powder of a spray material by a plasma generation gas and jet the powder of the spray material and the plasma generation gas from an opening at a leading end thereof; a plasma generator configured to form, by using the jetted plasma generation gas, a plasma having an axis center shared by the supplier; a magnetic field generator configured to generate a magnetic field in a space where the plasma is formed; and a controller configured to control the magnetic field generator to control a deflection of the plasma.
    Type: Application
    Filed: October 27, 2017
    Publication date: August 22, 2019
    Inventors: Yoshiyuki Kobayashi, Shinji Himori, Naokazu Furuya
  • Patent number: 10388544
    Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: August 20, 2019
    Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Limited
    Inventors: Akio Ui, Hisataka Hayashi, Takeshi Kaminatsui, Shinji Himori, Norikazu Yamada, Takeshi Ohse, Jun Abe
  • Publication number: 20190244794
    Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.
    Type: Application
    Filed: April 19, 2019
    Publication date: August 8, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akihiro YOKOTA, Shinji HIMORI, Tatsuro OHSHITA, Shu KUSANO
  • Publication number: 20190164726
    Abstract: A plasma processing apparatus includes a processing chamber in which plasma is generated, and a protection target member which is provided in the processing chamber and needs to be protected from consumption by the plasma. The protection target member is made of a material having a property of integrating radicals and/or anions or a protective layer containing the material is provided on a surface of the protection target member.
    Type: Application
    Filed: November 27, 2018
    Publication date: May 30, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Gen TAMAMUSHI, Naoyuki SATOH, Akihiro YOKOTA, Shinji HIMORI
  • Patent number: 10297428
    Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: May 21, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akihiro Yokota, Shinji Himori, Tatsuro Ohshita, Shu Kusano
  • Patent number: 10290468
    Abstract: The present invention provides an upper electrode and an etching apparatus including the electrode, both of which can properly reduce the intensity of the electric field of plasma around a central portion of a substrate, thus enhancing in-plane uniformity. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. Both a dielectric supply passage and a dielectric discharge passage are connected with the space. With such configuration, controlled supply of the dielectric into the recess makes the in-plane electric field intensity distribution uniform over various process conditions, such as the kind of wafer to be etched, the processing gas to be used, and the like.
    Type: Grant
    Filed: September 13, 2013
    Date of Patent: May 14, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masanobu Honda, Shinji Himori
  • Publication number: 20190057845
    Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.
    Type: Application
    Filed: August 17, 2018
    Publication date: February 21, 2019
    Inventors: Koichi Nagami, Kazunobu Fujiwara, Tatsuro Ohshita, Takashi Dokan, Koji Maruyama, Kazuya Nagaseki, Shinji Himori
  • Publication number: 20180374720
    Abstract: A gas exhaust plate capable of improving a confinement effect of plasma while achieving sufficient conductance is provided. The gas exhaust plate is provided between a sidewall of a processing vessel of a plasma processing apparatus and a mounting table provided within the processing vessel, and is configured to separate a processing space in which a processing is performed by a plasmarized gas from a gas exhaust space which is adjacent to the processing space and through which a gas generated by the processing is exhausted. The gas exhaust plate includes a porous metal sheet.
    Type: Application
    Filed: June 18, 2018
    Publication date: December 27, 2018
    Inventors: Shinji Himori, Jun Abe
  • Publication number: 20180374679
    Abstract: A power feed member having high heat insulation and capable of transmitting a power at a low loss is provided. The power feed member configured to supply a power includes a first conductive member; a second conductive member; and a connecting member configured to electrically connect the first conductive member and the second conductive member. At least a part of the connecting member is formed of a porous metal or multiple bulk metals.
    Type: Application
    Filed: June 25, 2018
    Publication date: December 27, 2018
    Inventors: Shunichi Ito, Shinji Himori, Etsuji Ito, Naokazu Furuya, Gen Tamamushi
  • Patent number: 10147633
    Abstract: A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: December 4, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinji Himori, Takehiro Kato, Etsuji Ito
  • Patent number: 10032611
    Abstract: A connection control method in a substrate processing apparatus is provided. The substrate processing apparatus comprises: a depressurized processing room; a susceptor that is provided in the processing room and configured to mount a wafer thereon; a HF high frequency power supply configured to apply a high frequency voltage for plasma generation to the susceptor; a LF high frequency power supply configured to apply a high frequency voltage for a bias voltage generation to the susceptor; and a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the susceptor, capable of improving a processing controllability in an etching process. The connection control method comprises controlling connection or disconnection between the susceptor and the LF high frequency power supply and connection or disconnection between the susceptor and the DC voltage applying unit when plasma is generated in the processing room.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: July 24, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinji Himori, Norikazu Yamada, Takeshi Ohse
  • Publication number: 20180174806
    Abstract: Disclosed is a plasma processing apparatus including: a processing container; a placing table provided in the processing container and configured to place a workpiece thereon; a dielectric member having a facing surface that faces the placing table; a planar antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the processing container via the dielectric member; and an electromagnet group disposed along an outer circumference of the processing container and configured to form a magnetic field for moving ions in plasma based on the induced electric field along the facing surface of the dielectric member in the processing container.
    Type: Application
    Filed: December 13, 2017
    Publication date: June 21, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kazuya NAGASEKI, Shinji HIMORI, Mitsunori OHATA
  • Patent number: 9978566
    Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: May 22, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akihiro Yokota, Shinji Himori, Tatsuro Ohshita, Shu Kusano, Etsuji Ito, Kazuya Nagaseki