Abstract: An apparatus for holding an object to be processed, according to this invention is mounted in a plasma processing apparatus and includes a convex-shaped holder main body, first dielectric film, and second dielectric film. The holder main body has a holding portion which holds an object to be processed placed on it and a flange formed on the peripheral portion of the holding portion to fit with a focus ring. The first dielectric film attracts the object to be processed placed on the holding portion to the holder main body by a Coulomb force. The second dielectric film attracts the focus ring fitted on the flange to the holder main body by an attracting force larger than that of the first dielectric film using a Johnson-Rahbek force. The electrostatic attracting force of the focus ring for the holder main body is increased, so that the cooling effect is increased.

Abstract: A plasma processing system comprises a pair of electrodes (12, 13) arranged in parallel to each other in a processing vessel (11), and a focus ring (17) arranged on one (12) of the electrodes for holding an object to be processed (8) and surrounding the object on the electrode (12). A plasma processing method for processing the object with the plasma, applying a high frequency power to the electrodes of the system to generate the plasma between the pair of electrodes, is carried out as follows. First, a focus ring having a certain material, dimension and shape is used for carrying out the plasma processing on certain processing conditions.

Abstract: There is provided a plasma treatment apparatus that carries out plasma treatment on an article, with which it is possible to make the plasma density uniform. A plasma treatment vessel houses a semiconductor wafer and a treatment gas is introduced into the plasma treatment vessel. A lower electrode is provided inside the plasma treatment vessel and the semiconductor wafer is placed onto the lower electrode. An upper electrode that has a plurality of holes formed therein and has a dome shape that is upwardly convex, is provided above the lower electrode in the plasma treatment vessel. A height of the upper electrode from the lower electrode becomes greater from an outside of the lower electrode to a center of the lower electrode.

Abstract: An apparatus for holding an object to be processed, according to this invention is mounted in a plasma processing apparatus and includes a convex-shaped holder main body, first dielectric film, and second dielectric film. The holder main body has a holding portion which holds an object to be processed placed on it and a flange formed on the peripheral portion of the holding portion to fit with a focus ring. The first dielectric film attracts the object to be processed placed on the holding portion to the holder main body by a Coulomb force. The second dielectric film attracts the focus ring fitted on the flange to the holder main body by an attracting force larger than that of the first dielectric film using a Johnson-Rahbek force. The electrostatic attracting force of the focus ring for the holder main body is increased, so that the cooling effect is increased.

Abstract: The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

Abstract: There are provided a matching unit capable of sufficiently matching the impedance of a high frequency load to a transmission path impedance without increasing its size and matching time even if a high frequency power of 70 MHz or higher is supplied thereto, and a plasma processing system using the same.

Abstract: In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from a gas spouting surface of a shower head, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. The inactive gas is continuously supplied from inactive gas spouting holes formed all over the gas spouting surface. The reactive gas is supplied from reactive gas spouting holes, which are formed all over the gas spouting surface and divided into a plurality of groups, by repeatedly scanning the groups in a time-sharing manner.

Abstract: A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.