Abstract: A thermoelectric conversion element 10 includes: a substrate 11; a first electrode 12 on a high temperature side which is disposed on a front surface of the substrate 11; a second electrode 13 on a low temperature side which is disposed on a front surface of the substrate 11; a thermal conductor 14 which connects the first electrode 12 and the second electrode 13 to each other and contains a nanostructure; and an absorption film 15 which is formed on a front surface of the first electrode 12 and absorbs incident light. The thermal conductor 14 is provided at a position separated from the substrate 11. In the thermoelectric conversion element 10, the absorption film 15 may be an infrared absorption film, and the incident light may have a wavelength in a range of 4 ?m to 12 ?m.

Abstract: [Object] To provide an optical element and an electronic apparatus that can be miniaturized, reduce a height, and increase a response speed as well as realizing modulation with a high transmitted light intensity or a high reflected light intensity. [Solving Means] An optical element according to the present technology includes a first light reflecting layer, a first dielectric thick film layer, a multilayer film laminate, a second dielectric thick film layer, and a second light reflecting layer. The first dielectric thick film layer is formed of a dielectric and arranged on the first light reflecting layer. The multilayer film laminate is a multilayer film laminate arranged on the first dielectric thick film layer and includes a plurality of transparent conductor thin films capable of controlling optical transition energy by a Fermi level adjustment and a dielectric thin film that is an atomic layer thin film arranged between a plurality of the transparent conductor thin films.

Abstract: [Object] To provide an optical element and an electronic apparatus having a high response speed and high controllability of a modulation wavelength. [Solving Means] An optical element according to the present technology includes a first conductor film, a second conductor film, and a dielectric film. The first conductor film has light transmittance and capable of controlling optical transition energy by a Fermi level adjustment. The second conductor film has the light transmittance and capable of controlling the optical transition energy by the Fermi level adjustment. The dielectric film is arranged between the first conductor film and the second conductor film and has the light transmittance and elasticity.

Abstract: An image pickup device according to the present technology that includes an on-chip lens, a low-refractive index layer, and an infrared absorption layer. The on-chip lens is formed of a high-refractive index material. The low-refractive index layer is formed to be flat on the on-chip lens, the low-refractive index layer being formed of a low-refractive index material. The infrared absorption layer is formed of an infrared absorption material including at least one kind of organic infrared absorption dye and binder resin, a glass transition temperature of the binder resin being not less than 100° C., a concentration of the infrared absorption dye in the infrared absorption material being not less than 15 wt % and not more than 50 wt %, the infrared absorption layer being laminated above the low-refractive index layer.

Abstract: To provide an electromagnetic wave detection element capable of detecting an electromagnetic wave with an arbitrary wavelength and being miniaturized. An electromagnetic wave detection element according to the present technology includes an antenna unit and a detection unit. The antenna unit includes a first conductive layer, a first dielectric layer that is laminated on the first conductive layer and is constituted of a dielectric body, and a first graphene layer that is laminated on the first dielectric layer and is made of graphene. The detection unit includes a second conductive layer that is made of a conductive material and is separated from the first conductive layer, a second dielectric layer that is laminated on the second conductive layer and is constituted of a dielectric body, and a second graphene layer that is laminated on the second dielectric layer, is made of graphene, and is separated from the first graphene layer.

Abstract: A thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials is described. A thin-film manufacturing method according to the present technology includes bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal, heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal, supplying a film-forming raw material to the first region; and forming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.

Abstract: [Object] To provide a thin-film manufacturing method, a thin-film manufacturing apparatus, a manufacturing method for a photoelectric conversion element, a manufacturing method for a logic circuit, a manufacturing method for a light-emitting element, and a manufacturing method for a light control element with which number-of-layers control and laminating and film-forming of different kinds of materials can be performed. [Solving Means] A thin-film manufacturing method according to the present technology includes: bringing an electrically conductive film-forming target into contact with a first terminal and a second terminal; heating a first region that is a region of the film-forming target between the first terminal and the second terminal by applying voltage between the first terminal and the second terminal; supplying a film-forming raw material to the first region; and forming a thin film in the first region by controlling reaction time such that a thin film having a desired number of layers is formed.

Abstract: To provide an electromagnetic wave detection element capable of detecting an electromagnetic wave with an arbitrary wavelength and being miniaturized. An electromagnetic wave detection element according to the present technology includes an antenna unit and a detection unit. The antenna unit includes a first conductive layer, a first dielectric layer that is laminated on the first conductive layer and is constituted of a dielectric body, and a first graphene layer that is laminated on the first dielectric layer and is made of graphene. The detection unit includes a second conductive layer that is made of a conductive material and is separated from the first conductive layer, a second dielectric layer that is laminated on the second conductive layer and is constituted of a dielectric body, and a second graphene layer that is laminated on the second dielectric layer, is made of graphene, and is separated from the first graphene layer.

Abstract: An imaging device, comprising: an infrared light absorption layer including a cyanine dye represented by Chemical Formula (A) below: wherein R1 and R2 are selected from the group consisting of: a chain alkyl group, a cyclic alkyl group, a phenyl group, and a benzyl group; wherein the chain alkyl group and the cyclic alkyl group including at least one group member selected from the group consisting of: 1) a first group having one or more hydrogen atoms in a first alkyl group substituted with at least one functional group selected from the group consisting of: a halogen atom, an alkoxy group, an alkanoloxy group, an amino group, a thiol group, and a mercapto group; 2) a second group having at least one reactive group selected from the group consisting of: a vinyl group, an acrylic group, a carbonyl group, a carboxyl group, an alkenyl group, an alkenyloxy group, an alkoxycarbonyl group, a nitrile group, a carboxyl group, a carbonyl group, a sulfonyl group, a sulfamoyl group, a carbamoyl group, a benzoyloxy group

Abstract: An image pickup device according to the present technique includes an on-chip lens, a low-refractive-index layer, and an infrared absorption layer. The on-chip lens is formed of a high-refractive-index material. The low-refractive-index layer is formed flat on the on-chip lens and formed of a low-refractive-index material. The infrared absorption layer is formed of an infrared absorption material and laminated as a higher layer than the low-refractive-index layer. The infrared absorption material includes an infrared absorption pigment and a binder resin, the binder resin, being a synthetic resin constituted of a siloxane skeleton alone or a synthetic resin constituted of a siloxane skeleton part and a partial skeleton having a low reaction activity in an oxygen part.

Abstract: [Object] To provide an image pickup device that is capable of reducing the thickness of the imaging optical system without reducing the imaging capacity and has excellent durability. [Solving Means] An image pickup device according to the present technology is includes an on-chip lens, a low-refractive index layer, and an infrared absorption layer. The on-chip lens is formed of a high-refractive index material. The low-refractive index layer is formed to be flat on the on-chip lens, the low-refractive index layer being formed of a low-refractive index material. The infrared absorption layer is formed of an infrared absorption material including at least one kind of organic infrared absorption dye and binder resin, a glass transition temperature of the binder resin being not less than 100° C.

Abstract: An imaging device, comprising: an infrared light absorption layer including a cyanine dye represented by Chemical Formula (A) below: wherein R1 and R2 are selected from the group consisting of: a chain alkyl group,a cyclic alkyl group, a phenyl group, and a benzyl group; wherein the chain alkyl group and the cyclic alkyl group including at least one group member selected from the group consisting of: 1) a first group having one or more hydrogen atoms in a first alkyl group substituted with at least one functional group selected from the group consisting of: a halogen atom, an alkoxy group, an alkanoloxy group, an amino group, a thiol group, and a mercapto group; 2) a second group having at least one reactive group selected from the group consisting of: a vinyl group, an acrylic group, a carbonyl group, a carboxyl group, an alkenyl group, an alkenyloxy group, an alkoxycarbonyl group, a nitrile group, a carboxyl group, a carbonyl group, a sulfonyl group, a sulfamoyl group, a carbamoyl group, a benzoyloxy group,

Abstract: [Object] To provide an image pickup device that has excellent durability and is capable of thinning an image pickup optical system without lowering image pickup performance. [Solving Means] An image pickup device according to the present technique includes an on-chip lens, a low-refractive-index layer, and an infrared absorption layer. The on-chip km is formed of a high-refractive-index material. The low-refractive-index layer is formed flat on the on-chip lens and formed of a low-refractive-index material. The infrared absorption layer is formed of an infrared absorption material and laminated as a higher layer than the low-refractive-index layer, the infrared absorption, material including are infrared absorption, pigment and a binder resin, the binder resin, being a synthetic resin constituted of a siloxane skeleton alone or a synthetic resin constituted of a siloxane skeleton part and a partial skeleton having a low reaction activity in an oxygen part.