Patents by Inventor Shinji Imato

Shinji Imato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film formation method
    Patent number: 4987008
    Abstract: Film formation without damage on the surface of semiconductor can be established by generating active halogen or active hydrogen by a photochemical reaction, cleaning on the surface of the semiconductor by removing oxide formed thereon by means of the active elements, and continuously thereafter fabricating the film by a photochemical reaction in the same device.
    Type: Grant
    Filed: May 24, 1989
    Date of Patent: January 22, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kazuo Urata, Mamoru Tashiro, Yuji Tanamura, Shinji Imato
  • Gas discharge lamp having temperature controlled, liquid reservoir for liquified portion of gas
    Patent number: 4949004
    Abstract: A mercury-vapor lamp is provided with a reservoir in which a superfluous amount of mercury is stored in the form of liquid state. The liquid mercury in the reservoir is cooled to a certain temperature. The pressure of mercury-vapor is automatically reduced to the saturated pressure of the liquid mercury cooled. In this configuration, the pressure of mercury-vapor is controlled by adjusting the temperature of the liquid mercury stored in the reservoir.
    Type: Grant
    Filed: February 8, 1989
    Date of Patent: August 14, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takashi Inujima, Kazuo Urata, Mamoru Tashiro, Yuji Tanamura, Shinji Imato, Kenji Itoh, Seiichi Odaka, Shigenori Hayashi, Naoki Hirose
  • Ultraviolet light emitting device and application thereof
    Patent number: 4910044
    Abstract: Ultraviolet light is emitted mainly with 185 nm in wave length so that a thick silicon layer is fabricated by decomposition of silane gas at a high deposition speed. As a light source, a bulb is filled with an amount of mercury gas without dosing argon gas which enhances preferentially light with 254 nm in wave length.
    Type: Grant
    Filed: September 1, 1988
    Date of Patent: March 20, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kazuo Urata, Mamoru Tashiro, Yuji Tanamura, Shinji Imato, Takashi Inujima, Shigenori Hayashi
  • Liquid crystal filling device
    Patent number: 4691995
    Abstract: An improved liquid crystal filling device is shown. Prior to joining a substrate with another substrate between which the liquid crystal is to be charged, the liquid crystal is dropped on the substrate and then the other substrate is superimposed on the substrate under pressure. Sandwiched between the substrates, the liquid crystal spreads at high temperature.
    Type: Grant
    Filed: July 15, 1986
    Date of Patent: September 8, 1987
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshimitsu Konuma, Toshiji Hamatani, Akira Mase, Kaoru Koyanagi, Shinji Imato, Toshiharu Yamaguchi, Mitsunori Sakama, Takashi Inujima