Patents by Inventor Shinji Imatou
Shinji Imatou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6756670Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.Type: GrantFiled: October 30, 2000Date of Patent: June 29, 2004Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Kazuo Urata, Itaru Koyama, Shinji Imatou, Shigenori Hayashi, Naoki Hirose, Mari Sasaki, Noriya Ishida, Kouhei Wada
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Patent number: 6191492Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.Type: GrantFiled: December 6, 1993Date of Patent: February 20, 2001Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Kazuo Urata, Itaru Koyama, Shinji Imatou, Shigenori Hayashi, Naoki Hirose, Mari Sasaki, Noriya Ishida, Kouhei Wada
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Patent number: 5283087Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: April 6, 1992Date of Patent: February 1, 1994Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 5256483Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: October 31, 1990Date of Patent: October 26, 1993Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 5147822Abstract: An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.Type: GrantFiled: February 25, 1991Date of Patent: September 15, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Kazuo Urata, Itaru Koyama, Shinji Imatou, Shigenori Hayashi, Naoki Hirose, Mari Sasaki, Noriya Ishida, Kouhei Wada
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Patent number: 5079031Abstract: An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.Type: GrantFiled: March 17, 1989Date of Patent: January 7, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Shinji Imatou, Noriya Ishida, Mari Sasaki, Mitsunori Sakama, Takeshi Fukada, Naoki Hirose, Mitsunori Tsuchiya, Atsushi Kawano, Kazuhisa Nakashita, Junichi Takeyama, Toshiji Hamatani
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Patent number: 5013688Abstract: An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.Type: GrantFiled: July 26, 1989Date of Patent: May 7, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunepi Yamazaki, Kazuo Urata, Itaru Koyama, Noriya Ishida, Mari Sasaki, Shinji Imatou, Kazuhisa Nakashita, Naoki Hirose
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Patent number: 5007374Abstract: An apparatus suitable for mass-production of carbon coatings having a high degree of hardness. The apparatus utilized two types of energy input. First energy is inputted to a pair of electrodes provided in a reaction chamber, between which electrodes a deposition space is defined. A number of substrates to be coated are mounted on a plurality of substrate holders which are supplied with a second electric energy. The holders are arranged parallel to the electric field to prevent disturbance of the electric field.Type: GrantFiled: March 17, 1989Date of Patent: April 16, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Shinji Imatou, Mitsunori Tsuchiya, Kenji Itoh, Takashi Inushima, Atsushi Kawano
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Patent number: 4987004Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: May 11, 1990Date of Patent: January 22, 1991Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 4971667Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.Type: GrantFiled: February 3, 1989Date of Patent: November 20, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
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Patent number: 4970366Abstract: An improved laser patterning method and apparatus is described. A number of parallel grooves can be formed on a glass substrate coated with an ITO film by projecting flat laser pulses while the substrate is continuously sliding. By this process, the process time for producing a substrate for liquid crystal display can be reduced.Type: GrantFiled: March 24, 1989Date of Patent: November 13, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shinji Imatou, Hisato Shinohara