Abstract: According to one embodiment, a semiconductor device includes a first conductive layer between first and second insulating layers with an oxide semiconductor column extending in the first direction through these layers. A third insulating layer covers the column. The column has a first semiconductor portion at a first position matching the first insulating layer, a second semiconductor portion at a second position matching second insulating layer, and a third semiconductor portion at a third position matching the first conductive layer. The first semiconductor portion is continuous along a second direction between the third insulating layer, the second semiconductor portion is continuous along the second direction between the third insulating layer, but the third semiconductor portion is not continuous between the third insulating layer.

Abstract: A die casting sleeve, supported horizontally on a die casting device such that a cylinder portion front end communicates with a cavity and a plunger tip is inserted from a cylinder portion rear end, is configured such that the cylinder portion has a double structure in which an inner cylinder is fitted into an outer cylinder, the inner cylinder is made of a composite material of titanium or a titanium alloy and ceramic in at least a molten metal receiving region under an inlet port, a first planar portion is formed on the outer cylinder in the molten metal receiving region, and a cooling device including a tubular portion for letting a cooling medium flow in a jacket main body as a metal block having a second planar portion is mounted on the outer cylinder in a state where the second planar portion abuts against the first planar portion.

Abstract: A die casting sleeve, supported horizontally on a die casting device such that a cylinder portion front end communicates with a cavity and a plunger tip is inserted from a cylinder portion rear end, is configured such that the cylinder portion has a double structure in which an inner cylinder is fitted into an outer cylinder, the inner cylinder is made of a composite material of titanium or a titanium alloy and ceramic in at least a molten metal receiving region under an inlet port, a first planar portion is formed on the outer cylinder in the molten metal receiving region, and a cooling device including a tubular portion for letting a cooling medium flow in a jacket main body as a metal block having a second planar portion is mounted on the outer cylinder in a state where the second planar portion abuts against the first planar portion.

Abstract: An apparatus for cleaning a substrate has a holding unit 60 that holds a substrate W; a rotated unit 30 connected to the holding unit 60; a rotating unit 35 that is provided on a peripheral outer side of the rotated unit 30 and rotates the rotated unit 30; and a cleaning unit 10, 20 that physically cleans the substrate W held by the holding unit 60.

Abstract: Provided is a metal-based material having a high hardness. A metal-based composite material of the present invention is formed from a sintered body obtained from Ti material powder, Mo material powder, Ni material powder, and ceramics powder, and 0.1 to 9 parts by mass of Ni is contained with respect to 100 parts by mass of the entirety of the metal-based composite material.

Abstract: [Object] Provided is a metal-based material having a high hardness. [Solution] A metal-based composite material of the present invention is formed from a sintered body obtained from Ti material powder, Mo material powder, Ni material powder, and ceramics powder, and 0.1 to 9 parts by mass of Ni is contained with respect to 100 parts by mass of the entirety of the metal-based composite material.

Abstract: An apparatus for cleaning a substrate has a holding unit 60 that holds a substrate W; a rotated unit 30 connected to the holding unit 60; a rotating unit 35 that is provided on a peripheral outer side of the rotated unit 30 and rotates the rotated unit 30; and a cleaning unit 10, 20 that physically cleans the substrate W held by the holding unit 60.

Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv?, the projected discharge position Gfv? being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle ? formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle ?/2 to an angle determined by deducting the half contact angle ?/2 from 90°, the half contact angle ?/2 being a half of the contact angle ?.

Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv?, the projected discharge position Gfv? being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle ? formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle ?/2 to an angle determined by deducting the half contact angle ?/2 from 90°, the half contact angle ?/2 being a half of the contact angle ?.

Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv?, the projected discharge position Gfv? being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle ? formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle ?/2 to an angle determined by deducting the half contact angle ?/2 from 90°, the half contact angle ?/2 being a half of the contact angle ?.

Abstract: A substrate processing apparatus includes: a polishing device 30A for polishing the surface of a substrate; and at least one of an ultrasonic cleaning device 42 for cleaning the surface of the substrate with ultrasonic waves transmitted through a liquid, and a two-fluid jet cleaning device 44 for cleaning the surface of the substrate with a two-fluid jet spouted as a mixture of a gas and a liquid. A substrate processing method includes: a polishing step of polishing the surface of a substrate; and a solid matter noncontact cleaning step of cleaning the surface of the substrate by spraying a liquid to the surface of the substrate. The above apparatus and method make it possible to efficiently clean the surface of a substrate after it is polished.

Abstract: A cleaning method according to embodiments of the present invention is a cleaning method of cleaning residues from a semiconductor substrate by rotating a roll brush, the method having cleaning residues from the semiconductor substrate while pressing the roll brush against the semiconductor substrate with a first pressure of 7.35 kPa or lower, and cleaning residues from the semiconductor substrate while pressing the roll brush against the semiconductor substrate with a second pressure higher than 7.35 kPa.

Abstract: A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv?, the projected discharge position Gfv? being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle ? formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle ?/2 to an angle determined by deducting the half contact angle ?/2 from 90°, the half contact angle ?/2 being a half of the contact angle ?.

Abstract: A substrate processing apparatus includes: a polishing device 30A for polishing the surface of a substrate; and at least one of an ultrasonic cleaning device 42 for cleaning the surface of the substrate with ultrasonic waves transmitted through a liquid, and a two-fluid jet cleaning device 44 for cleaning the surface of the substrate with a two-fluid jet spouted as a mixture of a gas and a liquid. A substrate processing method includes: a polishing step of polishing the surface of a substrate; and a solid matter noncontact cleaning step of cleaning the surface of the substrate by spraying a liquid to the surface of the substrate. The above apparatus and method make it possible to efficiently clean the surface of a substrate after it is polished.

Abstract: An apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. The apparatus for processing a substrate includes a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

Abstract: The substrate processing apparatus has substrate holding mechanisms (14) for holding the substrate (W) under a holding force which is changed according to a rotational speed of the substrate holding mechanisms (14), a substrate rotation mechanism (22) for rotating the substrate holding mechanisms (14) to rotate the substrate (W) held by the substrate holding mechanisms (14), and a treatment liquid supply mechanism (12, 15, 19) for supplying a treatment liquid to a desired portion of the substrate (W) held by the substrate holding mechanisms (14).

Abstract: The present invention relates to a method of and an apparatus for forming a thin metal film of copper, silver, or the like on a surface of a semiconductor or another substrate. A method of forming a thin metal film, comprises preparing a dispersed liquid having a metal-containing organic compound dispersed in a predetermined solvent, coating the dispersed liquid on a surface of a substrate and evaporating the solvent to form a coating layer, and applying an energy beam to the coating layer to decompose away an organic substance contained in the coating layer in an area irradiated with the energy beam and bond metal contained in the coating layer.According to the present invention, it is possible to form a thin metal film of good quality efficiently and stably. The thin metal film used as metal interconnects in highly integrated semiconductor circuits contributes to the progress of a process of fabricating semiconductor devices.

Abstract: An object of the present invention to provide an apparatus for processing a substrate through successive steps including spin-drying the substrate with a single processing facility while preventing the substrate from being contaminated by a substrate processing liquid, etc. An apparatus for processing a substrate of the present invention, including a substrate holder for holding and rotating a substrate, a scattering prevention cup for circumferentially surrounding the substrate held by the substrate holder to prevent a substrate processing liquid supplied to the substrate from being scattered around, and a scattering prevention cup cleaner for cleaning an inner wall surface of the scattering prevention cup.

Abstract: There is provided a substrate processing apparatus and method which can uniformly increase the rate of processing of a substrate, e.g. etching or plating that takes place in the surface of a substrate, and which, when carrying out plating processing of a substrate, can form a plated film having a uniform film thickness easily and quickly. The substrate processing apparatus includes: a substrate holder 10 for holding and rotating a substrate W; and a heated fluid supply section 24 for bringing a heated fluid at a controlled temperature into contact with the substrate W, which is held and rotated by the substrate holder 10, so as to control the temperature of the substrate W.