Abstract: Polymers comprising fluorinated vinyl phenol units and having acid labile groups partially introduced are novel. Using such polymers, resist compositions featuring transparency to excimer laser and alkali solubility are obtained.

Abstract: A resist material including a base polymer having a group for producing an active methylene group through decomposition in the presence of an acid and an acid generator for generating an acid through irradiation with light is applied on a substrate, thereby forming a resist film. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and is developed with an alkaline developer after the pattern exposure, thereby forming a resist pattern.

Abstract: A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.

Abstract: A polymer having fluorinated vinyl phenol units copolymerized with acrylonitrile units has high transmittance to VUV radiation. A resist composition using the polymer as a base resin has high sensitivity and resolution to high-energy radiation and good plasma etching resistance and is suited for lithographic microprocessing.

Abstract: An acrylate resin containing fluorinated alkyl groups in ester side chains has high transmittance to VUV radiation. A resist composition using the resin as a base polymer is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for lithographic microprocessing.

Abstract: An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.

Abstract: A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: 1

Abstract: A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator:

Abstract: A pattern formation material includes a base polymer. The base polymer includes a polymer of the acrylic family having a chlorine atom or a chlorinated alkyl group bonded to a carbon atom bonded to an ester site in the principal chain of an acrylic unit.

Abstract: A pattern formation material contains a base polymer including a siloxane compound represented by Chemical Formula 1:

Abstract: A resist film is formed by applying, on a semiconductor substrate, a resist material including at least one atom or group selected from the group consisting of a halogen atom, a cyano group, a nitro group, an alkoxy group, an amino group, an alkyl group, a trifluoromethyl group and a mercapto group. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and the resist film is developed after the pattern exposure, so as to form a resist pattern.

Abstract: In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, 1 2

Abstract: In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator, 1 2

Abstract: A negative type resist in which an alkali-soluble base resin, a crosslinking agent and an acid generating agent are dissolved in a solvent, wherein 10 through 50 wt % of the crosslinking agent and 0.5 through 20 wt % of the acid generating agent on the basis of 100 wt % of the alkali-soluble base resin are dissolved in the solvent.

Abstract: A polymer having a unit expressed as "--CH.sub.2 CHR--" as well as a substituent capable of being decomposed by acid is employed as a base resin for a resist material. The resist material is further mixed with an acid generator. A resist pattern obtained by selectively exposing and developing the resist material is irradiated with light having a wavelength of not more than 300 nm under a nitrogen atmosphere. Active hydrogen at the .alpha.-position of the unit dissociates as a result to form polymer radicals, which are linked with each other in progress of a crosslinking reaction. Namely, a crosslinked structure of the polymer is formed. Consequently, a resist pattern having high dry etching resistance is completed.

Abstract: A method of forming a pattern includes the steps of forming a first layer by applying an organic material on a layer to be processed, forming a second layer which can be treated with an organic metal reagent and has a thickness in the range from 30 to 100 nm by applying a material which can be treated with an organic metal reagent on the first layer, selectively forming in the second layer a portion which cannot be treated with an organic metal reagent, treating with an organic metal reagent the portion of the second layer which can be treated with an organic metal reagent, and removing the portion which cannot be treated with an organic metal reagent and a portion of the first layer which is located thereunder.

Abstract: A method of forming a resist pattern is provided that has high resolution, wide focus margin, and favorable configuration, and high sensitivity. A resist film of a type that is developed with an alkali developer and that is subject to chemical change upon receiving light is formed on a semiconductor substrate. On the resist film, an acid film is formed of an acid water-soluble material, and that has transmittance of at least 70% before and during exposure of the light when the film thickness thereof is 1 .mu.m. The light is selectively directed towards the resist film, whereby an image is formed in the resist film. The resist film is developed with an alkali developer to form a resist pattern.

Abstract: In a method of forming a buried impurity layer at a deep position of a semiconductor substrate, the resist configuration is prevented from sagging. A resist film having a film thickness of at least 3 .mu.m is formed on a semiconductor substrate. The resist film is exposed selectively to form an image. After exposure and before developing, the resist film is baked at the temperature of 110.degree.-130.degree. C. The resist film is developed and rinsed to form a resist pattern. The generated resist pattern is baked at a temperature of 100.degree. C.-130.degree. C. Using the resist pattern as a mask, impurity ions are implanted at high energy to the main surface of the semiconductor substrate to form a buried impurity layer at a deep position of the semiconductor substrate. Then, the resist pattern is removed.

Abstract: The present invention is directed to a method of forming and removing a resist pattern, used in a semiconductor manufacture.In a first mode of the present invention, an upper resist layer containing germanium is selectively formed on a bottom resist layer and a resist pattern is formed with the upper resist layer as a mask. In a second mode of the present invention, a resist layer formed on a substrate is selectively exposed to introduce a germanium compound into the exposed portions and the above described resist layer is subjected to an anisotropic dry etching to remove the nonexposed portions of the resist layer, whereby forming a resist pattern. Accordingly, the fine pattern can be formed on the substrate in high accuracy by the use of the above described resist pattern. In addition, in the first and the second modes of the present invention, the resist pattern is removed by the use of an acid having an oxidizing power, so that the resist pattern can be easily removed from the substrate.

Abstract: The present invention is directed to a method of forming and removing a resist pattern, used in a semiconductor manufacture. In a first mode of the present invention, an upper resist layer containing germanium is selectively formed on a bottom resist layer and a resist pattern is formed with the upper resist layer as a mask. In a second mode of the present invention, a resist layer formed on a substrate is selectively exposed to introduce a germanium compound into the exposed portions and the above described resist layer is subjected to an anisotropic dry etching to remove the nonexposed portions of the resist layer, whereby forming a resist pattern. Accordingly, the fine pattern can be formed on the substrate in high accuracy by the use of the above described resist pattern. In addition, in the first and the second modes of the present invention, the resist pattern is removed by the use of an acid having an oxidizing power, so that the resist pattern can be easily removed from the substrate.