Patents by Inventor Shinji Kuzuya

Shinji Kuzuya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and fabrication process thereof
    Patent number: 7005755
    Abstract: A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.
    Type: Grant
    Filed: December 29, 2003
    Date of Patent: February 28, 2006
    Assignee: Fujitsu Limited
    Inventors: Tetsuo Yoshimura, Shinji Kuzuya, Kazuo Sukegawa, Tetsuo Izawa
  • Semiconductor device and fabrication process thereof
    Publication number: 20040135226
    Abstract: A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.
    Type: Application
    Filed: December 29, 2003
    Publication date: July 15, 2004
    Applicant: FUJITSU LIMITED
    Inventors: Tetsuo Yoshimura, Shinji Kuzuya, Kazuo Sukegawa, Tetsuo Izawa
  • Semiconductor device and fabrication process thereof
    Patent number: 6706610
    Abstract: A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: March 16, 2004
    Assignee: Fujitsu Limited
    Inventors: Tetsuo Yoshimura, Shinji Kuzuya, Kazuo Sukegawa, Tetsuo Izawa
  • Semiconductor device and fabrication process thereof
    Publication number: 20030008472
    Abstract: A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate.
    Type: Application
    Filed: August 30, 2002
    Publication date: January 9, 2003
    Applicant: FUJITSU LIMITED
    Inventors: Tetsuo Yoshimura, Shinji Kuzuya, Kazuo Sukegawa, Tetsuo Izawa
  • METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING TREATMENT OF SUBSTRATE AND APPARATUS FOR TREATMENT OF SUBSTRATE
    Publication number: 20020061647
    Abstract: A method for the treatment of a substrate is disclosed which comprises a step of washing the substrate as immersed in the liquid held in a one-bath type liquid tank, pulling up the substrate from within the liquid tank into the atmosphere of an inert gas, and drying the substrate in the atmosphere of the inert gas.
    Type: Application
    Filed: September 12, 1997
    Publication date: May 23, 2002
    Inventors: TOMOKAZU KAWAMOTO, SHINJI KUZUYA