Abstract: A micro three-dimensional structure capable of producing a micro three-dimensional structure (micrometer-to nanometer-order outer shape) having a complicated structure, a production method therefor and production device therefor are provided. In the production method for the micro three-dimensional structure, performed are the step of irradiating a focused ion beam (4) to a sample (1) while supplying a material gas (3) to form a first-layer deposit (5), the step of releasing secondary electrons (6) from the first-layer deposit (5) hit by ions to allow the secondary electrons (6) to form a terrace (7) on the first-layer deposit (5), a step of deflecting the focused ion beam (4) in a desired direction of the terrace (7) based on a set amount from a focal position controlling apparatus, a step of forming a second-layer deposit (8) in a deflected position on the terrace (7) based on the deflection amount, and a step of repeating the above steps to form a set micro three-dimensional structure.

Abstract: The method for forming a fine pattern on a substrate disclosed includes a step of preparing a hologram having a pattern, a step of irradiating material waves (de Broglie waves) such as neutral beams, ion beams and electron beams on the hologram, and a step of imaging the pattern on the substrate with the material waves being interfered by passing through the hologram. The light source has a source that emits a beam having a coherent wave front. Since the fine patterns are formed by utilizing the interference of material waves, the minimum processing precision can be enhanced to the extent of the wavelength of the material wave.

Abstract: In a nanometer order dot pattern producing method and drawing apparatus by electron holography, a nanometer order dot pattern is readily produced with a high accuracy, using a pair of biprisms or multi-biprisms integrated as a unit so as to mutually cross. Each multi-biprism includes a plurality of biprisms arranged in parallel. Electric potentials of the integrated biprisms or multi-biprisms are independently controlled.

Abstract: A film of an element is deposited on a semiconductor substrate by passing on the substrate gas containing the element and then irradiating a predetermined portion of the substrate with an electron beam. Then, the gas is decomposed to deposit the element on the substrate so as to form a pattern. By heating the pattern, the element is diffused into the surface of the substrate thus forming a diffused region. The gas is generated by sublimating solid Cr(C.sub.6 H.sub.6).sub.2, Mo(C.sub.6 H.sub.6).sub.2, Mo(C.sub.6 H.sub.6).sub.2, Al(CH.sub.3).sub.3, WCl.sub.6 etc.