Patents by Inventor Shinji Matsukawa
Shinji Matsukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10046397Abstract: The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 ?m and not more than 10 ?m and an average length of roughness profile elements RSm of not less than 3.1 ?m and not more than 5.4 ?m, and that the diamond layer has a plurality of cavities at a portion bordering on the base material.Type: GrantFiled: April 14, 2017Date of Patent: August 14, 2018Assignees: Sumitomo Electric Industries, Ltd., SUMITOMO ELECTRIC HARDMETAL CORP.Inventors: Katsuhito Yoshida, Shigeru Yoshida, Yuichiro Seki, Kiichi Meguro, Shinji Matsukawa
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Publication number: 20180147634Abstract: The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 ?m and not more than 10 ?m and an average length of roughness profile elements RSm of not less than 3.1 ?m and not more than 5.4 ?m, and that the diamond layer has a plurality of cavities at a portion bordering on the base material.Type: ApplicationFiled: April 14, 2017Publication date: May 31, 2018Applicants: Sumitomo Electric Industries, Ltd., SUMITOMO ELECTRIC HARDMETAL CORP.Inventors: Katsuhito Yoshida, Shigeru Yoshida, Yuichiro Seki, Kiichi Meguro, Shinji Matsukawa
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Patent number: 9731355Abstract: The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 ?m and not more than 10 ?m and an average length of roughness profile elements RSm of not less than 1 ?m and not more than 100 ?m, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.Type: GrantFiled: February 25, 2016Date of Patent: August 15, 2017Assignees: Sumitomo Electric Industries, Ltd., SUMITOMO ELECTRIC HARDMETAL CORP.Inventors: Katsuhito Yoshida, Shigeru Yoshida, Yuichiro Seki, Kiichi Meguro, Shinji Matsukawa
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Publication number: 20170216927Abstract: The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 ?m and not more than 10 ?m and an average length of roughness profile elements RSm of not less than 3.1 ?m and not more than 5.4 ?m, and that the diamond layer has a plurality of cavities at a portion bordering on the base material.Type: ApplicationFiled: April 14, 2017Publication date: August 3, 2017Inventors: Katsuhito Yoshida, Shigeru Yoshida, Yuichiro Seki, Kiichi Meguro, Shinji Matsukawa
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Patent number: 9484414Abstract: A MOSFET includes a silicon carbide substrate including a main surface having an off angle with respect to a {0001} plane and a source electrode formed in contact with the main surface. A base surface is exposed at at least a part of a contact interface of the silicon carbide substrate with the source electrode. With such a construction, the MOSFET achieves suppressed variation in threshold voltage.Type: GrantFiled: December 19, 2013Date of Patent: November 1, 2016Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hirofumi Yamamoto, Toru Hiyoshi, Shinji Matsukawa
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Publication number: 20160175941Abstract: The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 ?m and not more than 10 ?m and an average length of roughness profile elements RSm of not less than 1 ?m and not more than 100 ?m, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.Type: ApplicationFiled: February 25, 2016Publication date: June 23, 2016Inventors: Katsuhito Yoshida, Shigeru Yoshida, Yuichiro Seki, Kiichi Meguro, Shinji Matsukawa
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Patent number: 9302327Abstract: The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 ?m and not more than 10 ?m and an average length of roughness profile elements RSm of not less than 1 ?m and not more than 100 ?m, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.Type: GrantFiled: June 8, 2010Date of Patent: April 5, 2016Assignees: Sumitomo Electric Industries, Ltd., SUMITOMO ELECTRIC HARDMETAL CORP.Inventors: Katsuhito Yoshida, Shigeru Yoshida, Yuichiro Seki, Kiichi Meguro, Shinji Matsukawa
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Publication number: 20150372092Abstract: A MOSFET includes a silicon carbide substrate including a main surface having an off angle with respect to a {0001} plane and a source electrode formed in contact with the main surface. A base surface is exposed at at least a part of a contact interface of the silicon carbide substrate with the source electrode. With such a construction, the MOSFET achieves suppressed variation in threshold voltage.Type: ApplicationFiled: December 19, 2013Publication date: December 24, 2015Inventors: Hirofumi YAMAMOTO, Toru HIYOSHI, Shinji MATSUKAWA
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Patent number: 8829605Abstract: A MOSFET includes: a substrate made of silicon carbide and having a first trench and a second trench formed therein, the first trench having an opening at the main surface side, the second trench having an opening at the main surface side and being shallower than the first trench; a gate insulating film; a gate electrode; and a source electrode disposed on and in contact with a wall surface of the second trench. The substrate includes a source region, a body region, and a drift region. The first trench is formed to extend through the source region and the body region and reach the drift region. The second trench is formed to extend through the source region and reach the body region.Type: GrantFiled: November 19, 2012Date of Patent: September 9, 2014Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takeyoshi Masuda, Keiji Wada, Toru Hiyoshi, Shinji Matsukawa
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Patent number: 8283674Abstract: MOSFET is provided with SiC film. SiC film has a facet on its surface, and the length of one period of the facet is 100 nm or more, and the facet is used as channel. Further, a manufacturing method of MOSFET includes: a step of forming SiC film; a heat treatment step of heat-treating SiC film in a state where Si is supplied on the surface of SiC film; and a step of forming the facet obtained on the surface of SiC film by the heat treatment step into a channel. Thereby, it is possible to sufficiently improve the characteristics.Type: GrantFiled: October 26, 2006Date of Patent: October 9, 2012Assignee: Sumitomo Electric Industries, Ltd.Inventors: Takeyoshi Masuda, Shinji Matsukawa
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Patent number: 8274088Abstract: A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor layer side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.Type: GrantFiled: May 21, 2007Date of Patent: September 25, 2012Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hideki Matsubara, Hirohisa Saito, Fumitake Nakanishi, Shinji Matsukawa
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Publication number: 20110250394Abstract: The present invention provides a diamond coated tool which is resistant to exfoliation at an interface between a base material and a diamond layer. The diamond coated tool of the present invention is a diamond coated tool including a base material and a diamond layer coating a surface of the base material, and characterized in that the surface of the base material has an arithmetic average roughness Ra of not less than 0.1 ?m and not more than 10 ?m and an average length of roughness profile elements RSm of not less than 1 ?m and not more than 100 ?m, and that the diamond layer has a plurality of cavities extending from a portion bordering on the base material in a crystal growth direction.Type: ApplicationFiled: June 8, 2010Publication date: October 13, 2011Applicants: SUMITOMO ELECTRIC HARDMETAL CORP., SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Katsuhito Yoshida, Shigeru Yoshida, Yuichiro Seki, Kiichi Meguro, Shinji Matsukawa
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Publication number: 20100172390Abstract: A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.Type: ApplicationFiled: May 21, 2007Publication date: July 8, 2010Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Hideki Matsubara, Hirohisa Saito, Fumitake Nakanishi, Shinji Matsukawa
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Publication number: 20090230404Abstract: MOSFET (30) is provided with SiC film (11). SiC film (11) has a facet on its surface, and the length of one period of the facet is 100 nm or more, and the facet is used as channel (16). Further, a manufacturing method of MOSFET (30) includes: a step of forming SiC film (11); a heat treatment step of heat-treating SiC film (11) in a state where Si is supplied on the surface of SiC film (11); and a step of forming the facet obtained on the surface of SiC film (11) by the heat treatment step into a channel (16). Thereby, it is possible to sufficiently improve the characteristics.Type: ApplicationFiled: October 26, 2006Publication date: September 17, 2009Applicant: Sumitomo Electric Industries, Ltd.Inventors: Takeyoshi Masuda, Shinji Matsukawa