Patents by Inventor Shinji Miyazaki
Shinji Miyazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040033438Abstract: In a positive-working chemically amplified radiation sensitive resin composition with high sensitivity and high resolution comprising an alkali-insoluble or slightly alkali-soluble resin protected with an acid-labile protecting group and an acid generating compound upon irradiation with radiation, a difference of resolution line widths of isolated and dense patterns in a circuit pattern, in which an isolated pattern and a dense pattern are mixed, can be reduced by using a resin having activation energy (&Dgr;E) to make the protecting group cleaved of 25 Kcal/mole or higher as the alkali-insoluble or slightly alkali-soluble resin protected with an acid-labile protecting group, and a mixture of a compound generating a carboxylic acid upon irradiation with radiation and a compound generating a sulfonic acid upon irradiation with radiation as the acid generator.Type: ApplicationFiled: June 9, 2003Publication date: February 19, 2004Inventors: Takahiro Hamada, Dong Kwan Lee, Shinji Miyazaki
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Patent number: 6120921Abstract: The magneto-optical recording medium of the present invention has a triple-layer magnetic laminate on the surface side of the substrate, and the magnetic laminate comprises an amplification layer A.sub.1, an exchange coupling control layer C.sub.12 and a recording layer R.sub.2 formed in this order. In the recording of the medium, magnetic domain is formed in the recording layer R.sub.2 and, and in the reproduction of the medium, the magnetic domain in R.sub.2 is copied to A.sub.1 to form a copied magnetic domain simultaneously with the enlarging of the thus formed copied magnetic domain in A.sub.1 by irradiation of a laser beam and application of a reproduction magnetic field. In the present invention, the amplification layer A.sub.1 does not have a compensation temperature higher than room temperature. Curie temperature Tc.sub.A1 of the amplification layer A.sub.1, Curie temperature Tc.sub.C12 of the exchange coupling control layer C.sub.12, and Curie temperature Tc.sub.S12 of the switching layer S.sub.Type: GrantFiled: April 7, 1998Date of Patent: September 19, 2000Assignee: TDK CorporationInventors: Jiro Yoshinari, Shinji Miyazaki, Hiroyasu Inoue
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Patent number: 6086993Abstract: A magneto-optical recording medium capable of direct overwriting in a light intensity modulation mode comprises a magnetic multilayer structure comprising, in order form an surface side thereof, a readout layer R.sub.01, a memory layer M.sub.1, an exchange force control layer C.sub.12 and a recording layer W.sub.2, four layers in all. The magnetic multilayer structure satisfies TC.sub.W2 >Tc.sub.M1, t.sub.R01 /(t.sub.R01 +t.sub.M1)=0.3 to 0.6, and t.sub.R01 +t.sub.M1 =20 to 40 nm where Tc.sub.M1 is a Curie temperature of M.sub.1, Tc.sub.W2 is a Curie temperature of W.sub.2, t.sub.R01 is a thickness of R.sub.01, and t.sub.M1 is a thickness of M.sub.1. R.sub.01 contains Gd, Fe, and Co as main components with the proviso that Gd is contained in an amount of 23 to 27 at %, M.sub.1 contains Tb, Fe, and Co as main components with the proviso that Tb is contained in an amount of 21 to 25 at %, and C.sub.Type: GrantFiled: May 4, 1998Date of Patent: July 11, 2000Assignee: TDK CorporationInventors: Jiro Yoshinari, Shinji Miyazaki, Hiroyasu Inoue
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Patent number: 6068228Abstract: A shovel keeping mechanism in an ice making machine provided with an ice storage bin placed under an ice making mechanism to store ice cubes dropped therefrom. The shovel keeping mechanism is composed of a pair of parallel support rail portions provided on the bottom surface of a component member located at a lowermost portion of the ice making mechanism and extended in a fore-and-aft direction of the ice storage bin, and a shovel holder detachably assembled with the parallel support rail portions to retain an ice shovel inserted therein from the front of the ice storage bin.Type: GrantFiled: September 17, 1998Date of Patent: May 30, 2000Assignee: Hoshizaki Denki Kabushiki KaishaInventors: Minoru Kobayashi, Katsumi Moriyama, Shinji Miyazaki, Masaaki Kawasumi, Katsunobu Minari, Sumio Inoue, Hiromitsu Takeda, Shigeo Matsubayashi, Tomoyuki Ishida
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Patent number: 6042938Abstract: A magnetic recording medium includes a non-magnetic supporting substrate, and a magnetic layer on one surface thereof and a back coat layer on the other surface thereof, said back coat layer having a non-magnetic powder dispersed in a binder. The back coat layer contains carbon black and an inorganic powder as said non-magnetic powder. The carbon black contains a carbon black species having an average primary particle diameter of 40 to 70 nm, and the inorganic powder has an average primary particle diameter of 40 to 150 nm and a Mohs hardness of at least 3, with a weight ratio between said carbon black and said inorganic powder being 100:0.5 to 100:10. The binder comprises a phenoxy resin, a thermoplastic polyurethane resin having an amino group in a molecule thereof, and a polyisocyanate compound.Type: GrantFiled: December 17, 1997Date of Patent: March 28, 2000Assignee: TDK CorporationInventors: Tsunehiko Ikarashi, Masahide Kohno, Shinji Miyazaki
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Patent number: 6042921Abstract: The invention provides a phase charge type optical recording medium comprising on both sides of a recording layer dielectric layers, each containing zinc sulfide and silicon oxide as main components. The medium comprises on a substrate 2 a first dielectric layer 31, a recording layer 4, a second dielectric layer 32 and a reflective layer 5 made up of a metal. The first dielectric layer 32 comprises a dielectric lamina 1a on a substrate 2 side thereof and a dielectric lamina 1b on a recording layer 4 side thereof. The dielectric lamina 1a has a silicon oxide content of 2 to less than 40 mol %, the dielectric lamina 1b has a silicon oxide content of 40 to 100 mol %, and the second dielectric layer 32 has a silicon oxide content of 2 to 50 mol % and a thickness of 10 to 35 nm. The number of overwritable cycles can be increased.Type: GrantFiled: August 10, 1998Date of Patent: March 28, 2000Assignee: TDK CorporationInventors: Jiro Yoshinari, Masanori Kosuda, Hiroshi Shingai, Shinji Miyazaki
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Patent number: 6044044Abstract: A magneto-optical recording medium comprises a substrate, and a magnetic multilayer 4 on a surface side thereof. The magnetic multilayer comprises an amplifying layer A.sub.1 and a recording layer R.sub.2 which are laminated together and are each a magnetic layer. A nonmagnetic intermediate layer I.sub.12 is interleaved between the amplifying layer A.sub.1 and the recording layer R.sub.2 to couple them magnetostatically. The nonmagnetic intermediate layer I.sub.12 is made up of a metal oxide and has a thickness of 2 to 30 nm. The magnetic field intensity needed for magnetic field modulation reading or light modulation reading can be lowered.Type: GrantFiled: June 29, 1998Date of Patent: March 28, 2000Assignee: TDK CorporationInventors: Shinji Miyazaki, Hiroyasu Inoue, Jiro Yoshinari
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Patent number: 6031793Abstract: In reading a magneto-optical recording medium comprising a substrate and a magnetic multilayer on a surface of the substrate, which multilayer comprises, in order from the surface of the substrate, an amplifying layer A.sub.1, a control layer C.sub.2, and a recording layer R.sub.3 with a magnetic domain formed therein, the medium is first irradiated with a laser beam while a reading magnetic field is applied thereto in one direction. With the resulting temperature increase, the magnetic domain in R.sub.3 is successively copied from C.sub.2 to A.sub.1 to form copied magnetic domains, which are in turn enlarged by a reading magnetic field. Then, the enlarged, copied magnetic domain in A.sub.1 is read out. Thereupon, laser beam irradiation is interrupted or the power of the laser beam is decreased to thereby vanish the copied magnetic domains in A.sub.1 and C.sub.2. To carry out reading by light intensity modulation, an interface wall exchange force magnetic field between the respective magnetic layer, etc.Type: GrantFiled: April 10, 1998Date of Patent: February 29, 2000Assignee: TDK CorporationInventors: Jiro Yoshinari, Shinji Miyazaki, Hiroyasu Inoue
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Patent number: 6017620Abstract: The invention is directed at a magneto-optical recording medium which is directly overwritable by light intensity modulation, does not require an initializing magnet, and has on the surface side of a substrate four magnetic layers, a memory layer M.sub.1, a writing layer W.sub.2, a switching layer S.sub.3, and an initializing layer I.sub.4. The magnetic layers each contain a rare earth element and a transition element, have perpendicular magnetic anisotropy at room temperature, and satisfy the relationships:Tc.sub.I4 >Tc.sub.W2 >Tc.sub.M1 and Tc.sub.I4 >Tc.sub.W2 >Tc.sub.S3wherein Tc.sub.M1, Tc.sub.W2, Tc.sub.S3 and Tc.sub.I4 are the Curie temperatures of M.sub.1, W.sub.2, S.sub.3 and I.sub.4, respectively. Writing layer W.sub.2 is composed mainly of dysprosium, iron and cobalt, contains from 29-35 atomic percent of rare earth elements, and has an atomic ratio Fe/(Fe+Co) of from 0.40 to 0.58.Type: GrantFiled: April 7, 1998Date of Patent: January 25, 2000Assignee: TDK CorporationInventors: Jiro Yoshinari, Shinji Miyazaki, Hiroyasu Inoue
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Patent number: 6009050Abstract: The invention provides a method which can be performed on the same device with application of a modulated magnetic field to read a magneto-optical recording disk through a series of processes involving "copy of recorded magnetic domains.fwdarw.enlargement of copied magnetic domains.fwdarw.reproduction of copied magnetic domains.fwdarw.size reduction and disappearance of copied magnetic domains", and to read an ordinary magneto-optical recording medium. For reading information recorded on the first magneto-optical recording disk, the first magneto-optical recording disk is irradiated with a laser beam having a first reading power, and the alternating magnetic field is then applied thereto after synchronization by which the alternating magnetic field is applied thereto at a recorded mark position. For reading information recorded on the second magneto-optical recording disk, the second magneto-optical recording disk is irradiated with a second laser beam.Type: GrantFiled: May 27, 1998Date of Patent: December 28, 1999Assignee: TDK CorporationInventors: Hiroyasu Inoue, Shinji Miyazaki, Jiro Yoshinari
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Patent number: 5972435Abstract: The present invention manifests a highly excellent effect of allowing the plasma polymerization film to be formed stably for a long time while very rarely suffering occurrence of abnormal discharge during the formation of the plasma polymerization film and promoting the improvement of the yield of products because it adopts as the electrode for implementing plasma polymerization that of the electrodes which is located on the side confronting a surface on which the plasma polymerization film is formed, coats this electrode with a polymer material at a covering ratio in the range of 50-100%, and effects the formation of the plasma polymerization film on an elongate substrate under the operating pressure in the range of 10.sup.-3 -1 Torr. Further, the properties of the plasma polymerization film also become highly excellent.Type: GrantFiled: August 24, 1998Date of Patent: October 26, 1999Assignee: TDK CorporationInventors: Mitsuru Takai, Shinji Miyazaki, Kunihiro Ueda, Hiromichi Kanazawa
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Patent number: 5963512Abstract: In the present invention, data transmission rate is increased in the recording of the magneto-optical recording media in which the reproduction is accomplished by applying a modulated magnetic field in a scheme of "copying of the recorded magnetic domain.fwdarw.enlargement of the copied magnetic domain.fwdarw.reproduction of the copied magnetic domain .fwdarw.size reduction and disappearance of the copied magnetic domain". The recording/reproducing method of the present invention is adapted for use with a magneto-optical recording medium having a magnetic lamination comprising a recording layer and an amplification layer wherein recording is accomplished by applying a modulated recording magnetic field, and reproduction is accomplished by applying 1 cycle of the modulated magnetic field (reproduction magnetic field+erase magnetic field) per 1 record mark (1 bit). In the recording/reproducing method of the present invention, the recording and the reproduction are conducted such that:V.sub.R /V.sub.Type: GrantFiled: June 8, 1998Date of Patent: October 5, 1999Assignee: TDK CorporationInventors: Hiroyasu Inoue, Shinji Miyazaki, Jiro Yoshinari
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Patent number: 5674637Abstract: A magnetic recording medium having excellent electromagnetic characteristics, still characteristics and cupping resistance, reduced rust generation and increased durability, comprises a non-magnetic substrate and a magnetic layer formed thereon by oblique deposition, the magnetic layer being composed of at least two ferromagnetic metal thin films containing Co and Ni as main components, in which the Co content of the thin film closest to the substrate is less than 70 atomic per cent and the Co content of the film farthest from the substrate is 75 atomic per cent or more.Type: GrantFiled: December 21, 1994Date of Patent: October 7, 1997Assignee: TDK CorporationInventors: Shinji Miyazaki, Jiro Yoshinari, Koji Kobayashi
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Patent number: 5637153Abstract: After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.Type: GrantFiled: April 26, 1995Date of Patent: June 10, 1997Assignee: Tokyo Electron LimitedInventors: Reiji Niino, Yoshiyuki Fujita, Hideki Lee, Yasuo Imamura, Toshiharu Nishimura, Yuuichi Mikata, Shinji Miyazaki, Takahiko Moriya, Katsuya Okumura, Hitoshi Kato
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Patent number: 5558945Abstract: A magnetic recording medium having excellent electromagnetic characteristics, still characteristics and cupping, decreased rust generation and high durability, includes a non-magnetic substrate and a magnetic layer formed thereon by oblique deposition, the magnetic layer being composed of at least two ferromagnetic thin films, in which the ferromagnetic thin film of the lowest layer has a saturation magnetization of 300 emu/cc or less, a coercive force of 1000 Oe or less and a thickness of 300 to 1500 .ANG., the ferromagnetic thin layer of the uppermost layer has a saturation magnetization of 300 emu/cc or more, a coercive force of 1000 Oe or more and a thickness of 400 to 1500 .ANG., an average value (.theta.) of angles between growing directions of columnar crystalline particles constituting the ferromagnetic thin film of the lowest layer and a principal plane of the substrate ranges from 50 to 70 degrees, and an average value (.theta.Type: GrantFiled: December 21, 1994Date of Patent: September 24, 1996Assignee: TDK CorporationInventors: Shinji Miyazaki, Jiro Yoshinari, Koji Kobayashi
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Patent number: 5549979Abstract: A magnetic recording medium comprising a nonmagnetic base, an SiO.sub.x (x=1.2-1.95) undercoat, an under-layer ferromagnetic metal film consisting of a Co--Ni alloy, an SiO.sub.x (x=1.2-1.95) intermediate layer, an upper-layer ferromagnetic metal protective film consisting of a Co--Ni alloy, a diamond-like carbon protective film, and a lubricant layer, formed in the order of mention, the angles of vapor deposition as measured from lines normal to the upper- and under-layer ferromagnetic metal films being all decreasing toward the upper surfaces. The magnetic recording medium is made by forming an SiO.sub.x (x=1.2-1.Type: GrantFiled: November 29, 1993Date of Patent: August 27, 1996Assignee: TDK CorporationInventors: Shinji Miyazaki, Mitsuru Takai, Koji Kobayashi
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Patent number: 5380370Abstract: Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C.Type: GrantFiled: April 30, 1993Date of Patent: January 10, 1995Assignee: Tokyo Electron LimitedInventors: Reiji Niino, Yoshiyuki Fujita, Hideki Lee, Yasuo Imamura, Toshiharu Nishimura, Yuuichi Mikata, Shinji Miyazaki, Takahiko Moriya, Katsuya Okumura
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Patent number: 5252133Abstract: A vertically oriented CVD apparatus comprises a reaction chamber, a boat means vertically placed in the reaction chamber to horizontally support a plurality of semiconductor substrates, and a gas inlet tube including a plurality of gas injection holes along a longitudinal axis thereof and extending along a longitudinal side of the boat means to introduce a reaction gas into the reaction chamber. In the structure, a direction of each of the gas injection holes is set at an angle .theta. with respect to a reference line given by a straight line connecting a center of the gas inlet tube to a center of one of the semiconductor wafers, the angle .theta. being defined by 0.degree. < .theta. .ltoreq. 90.degree..Type: GrantFiled: December 18, 1991Date of Patent: October 12, 1993Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron LimitedInventors: Shinji Miyazaki, Yuichi Mikata, Takahiko Moriya, Reiji Niino, Motohiko Nishimura
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Patent number: 5250323Abstract: A chemical vapor growth apparatus comprises a process chamber for carrying out a chemical vapor growth process; source gas inlet for introducing at least one source gas to the process chamber from a gas source; source gas flow-rate controller for controlling the flow-rate of the source gas to be sent to the process chamber through the inlet; a first exhaust for exhausting the source gas remaining in the inlet and in the gas flow-rate controller, connected to the source gas inlet and the source gas flow-rate controller; a trap for absorbing the source gas remaining in the source gas inlet and the gas flow-rate controller, provided in the first exhaust; and a second exhaust for exhausting gases and particles generated by chemical reaction from the process chamber, the second exhaust being connected to the process chamber and to a vacuum pump.Type: GrantFiled: October 5, 1992Date of Patent: October 5, 1993Assignee: Kabushiki Kaisha ToshibaInventor: Shinji Miyazaki
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Patent number: 5131842Abstract: A thermal treating apparatus includes a reaction tube having an opening end and storing an object to be treated, an annular manifold arranged at the opening end and having an inlet for supplying a gas to the reaction tube and an outlet for exhausting the gas from the reaction tube, and a cover arranged on the opening end of the manifold. The surfaces of the annular manifold and the cover exposed to the inside of the reaction tube are covered by a material which is not corroded by the gas supplied to the reaction tube.Type: GrantFiled: June 26, 1990Date of Patent: July 21, 1992Assignees: Kabushiki Kaisha Toshiba, Tokyo Electron Sagami LimitedInventors: Shinji Miyazaki, Katushin Miyagi, Mituaki Komino