Patents by Inventor Shinji Nagashima
Shinji Nagashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20030134500Abstract: Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.Type: ApplicationFiled: March 17, 2003Publication date: July 17, 2003Inventors: Takayuki Komiya, Shinji Nagashima, Shigeyoshi Kojima
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Patent number: 6589339Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: GrantFiled: April 26, 2001Date of Patent: July 8, 2003Assignee: Tokyo Electron LimitedInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Patent number: 6590186Abstract: A baking unit of the present invention comprises: a hot plate on which the substrate is placed; a casing; a gas supply tubes; a baffle ring which surrounds the wafer and is provided with a plurality of gas blowing apertures; and a rotation motor. An inert gas is supplied to the wafer from the plurality of blowing apertures which is moved by rotation or turn round of the baffle by using the rotation motor.Type: GrantFiled: January 28, 2002Date of Patent: July 8, 2003Assignee: Tokyo Electron LimitedInventors: Takashi Tanaka, Shinji Nagashima
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Patent number: 6573191Abstract: Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.Type: GrantFiled: September 20, 2000Date of Patent: June 3, 2003Assignee: Tokyo Electron LimitedInventors: Takayuki Komiya, Shinji Nagashima, Shigeyoshi Kojima
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Patent number: 6564474Abstract: The present invention relates to a method for subjecting a substrate on which a coating film is formed to heat processing, and the method comprises the steps of heating the substrate to a predetermined high temperature and decreasing the temperature of the substrate to a predetermined low temperature, wherein in the step of decreasing the temperature of the substrate to the low temperature, a first step of decreasing the temperature of the substrate from the predetermined high temperature to a predetermined intermediate temperature and a second step of decreasing the temperature of the substrate from the intermediate temperature to the predetermined low temperature are performed separately.Type: GrantFiled: September 10, 2001Date of Patent: May 20, 2003Assignee: Tokyo Electron LimitedInventor: Shinji Nagashima
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Patent number: 6501191Abstract: A heat treatment apparatus for applying a predetermined heat treatment to a substrate includes: for example, a dielectric low oxygen controlled cure unit (DLC unit) for forming an interlayer insulating film on a semiconductor wafer W; a hot plate for supporting the wafer W a predetermined distance apart from the surface thereof; a chamber for housing the wafer W; a gas collecting port formed in that portion of the hot plate which corresponds to the lower side of the wafer W when the wafer W is disposed on the hot plate; and an oxygen sensor for measuring the oxygen concentration in the gas collected from the gas collecting port. Since the oxygen concentration can be measured during the heat treatment to the wafer W, the characteristics of the interlayer insulating film formed can be maintained constant.Type: GrantFiled: November 21, 2001Date of Patent: December 31, 2002Assignee: Tokyo Electron LimitedInventors: Takashi Tanaka, Shinji Nagashima, Hiroyuki Sakai
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Publication number: 20020139302Abstract: In a hot plate for performing heat processing while an inert gas is supplied, a mounting table is provided with a groove and a lower end portion of a lid body can be inserted into the groove. The lid body is lowered in two steps by a lid body drive apparatus. The lid body forms a processing chamber between the lid body and the mounting table by the lowering of the first step, and the lower end portion of the lid body is inserted into the groove by the lowering of the second step, thereby reducing the processing chamber in capacity. Consequently, in a substrate processing apparatus which requires a supply of gas, it becomes possible to reduce the capacity of the processing chamber and to reduce the required amount of gas.Type: ApplicationFiled: May 28, 2002Publication date: October 3, 2002Inventor: Shinji Nagashima
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Publication number: 20020123236Abstract: A baking unit of the present invention comprises: a hot plate on which the substrate is placed; a casing; a gas supply tubes; a baffle ring which surrounds the wafer and is provided with a plurality of gas blowing apertures; and a rotation motor. An inert gas is supplied to the wafer from the plurality of blowing apertures which is moved by rotation or turn round of the baffle by using the rotation motor.Type: ApplicationFiled: January 28, 2002Publication date: September 5, 2002Applicant: TOKYO ELECTRON LIMITEDInventors: Takashi Tanaka, Shinji Nagashima
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Publication number: 20020119678Abstract: Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.Type: ApplicationFiled: April 30, 2002Publication date: August 29, 2002Inventors: Kei Miyazaki, Yuichiro Uchihama, Kenji Yasuda, Kiminari Sakaguchi, Shinji Nagashima
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Publication number: 20020110641Abstract: The apparatus of the present invention for forming a coating film on a substrate by applying a coating liquid to the substrate comprises: a spin chuck for holding the substrate; a motor for rotating the spin chuck; and a nozzle for dropping the coating liquid on the center surface of the substrate. The nozzle included a spiral groove or a plurality of fins for giving a gyrating force to the dropped coating liquid.Type: ApplicationFiled: February 11, 2002Publication date: August 15, 2002Applicant: TOKYO ELECTRON LIMITEDInventors: Takashi Tanaka, Shinji Nagashima
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Publication number: 20020100419Abstract: An object of the present invention is to stably supply a treatment chamber with a treatment gas with a prescribed composition. A spin on dielectric (SOD) system includes a film treatment apparatus of the present invention which comprises, for forming an interlayer insulating film, a treatment chamber for placing a wafer W, a first mass flow controller for NH3 gas, a second mass flow controller for N2 gas with a prescribed water vapor, thereby supplying the treatment chamber with a gas of a prescribed composition.Type: ApplicationFiled: January 16, 2002Publication date: August 1, 2002Applicant: TOKYO ELECTRON LIMITEDInventor: Shinji Nagashima
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Patent number: 6419751Abstract: In a hot plate for performing heat processing while an inert gas is supplied, a mounting table is provided with a groove and a lower end portion of a lid body can be inserted into the groove. The lid body is lowered in two steps by a lid body drive apparatus. The lid body forms a processing chamber between the lid body and the mounting table by the lowering of the first step, and the lower end portion of the lid body is inserted into the groove by the lowering of the second step, thereby reducing the processing chamber in capacity. Consequently, in a substrate processing apparatus which requires a supply of gas, it becomes possible to reduce the capacity of the processing chamber and to reduce the required amount of gas.Type: GrantFiled: July 25, 2000Date of Patent: July 16, 2002Assignee: Tokyo Electron LimitedInventor: Shinji Nagashima
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Patent number: 6413317Abstract: Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.Type: GrantFiled: September 13, 2000Date of Patent: July 2, 2002Assignee: Tokyo Electron LimitedInventors: Kei Miyazaki, Yuichiro Uchihama, Kenji Yasuda, Kiminari Sakaguchi, Shinji Nagashima
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Publication number: 20020063119Abstract: A heat treatment apparatus for applying a predetermined heat treatment to a substrate includes: for example, a dielectric low oxygen controlled cure unit (DLC unit) for forming an interlayer insulating film on a semiconductor wafer W; a hot plate for supporting the wafer W a predetermined distance apart from the surface thereof; a chamber for housing the wafer W; a gas collecting port formed in that portion of the hot plate which corresponds to the lower side of the wafer W when the wafer W is disposed on the hot plate; and an oxygen sensor for measuring the oxygen concentration in the gas collected from the gas collecting port. Since the oxygen concentration can be measured during the heat treatment to the wafer W, the characteristics of the interlayer insulating film formed can be maintained constant.Type: ApplicationFiled: November 21, 2001Publication date: May 30, 2002Applicant: TOKYO ELECTRON LIMITEDInventors: Takashi Tanaka, Shinji Nagashima, Hiroyuki Sakai
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Publication number: 20020045011Abstract: After a first processing solution is spread over the front surface of a substrate and the temperature of the front surface of the substrate is regulated at a predetermined substrate temperature, a second processing solution is spread over the front surface of the substrate. The second processing solution can be spread while the front surface temperature of the substrate is maintained at the predetermined substrate temperature. Hence, a layer insulating film with good adhesion properties can be formed uniformly on the front surface of the substrate, and the quantity of the processing solution to be used can be reduced.Type: ApplicationFiled: December 26, 2001Publication date: April 18, 2002Inventor: Shinji Nagashima
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Publication number: 20020031730Abstract: The present invention relates to a method for subjecting a substrate on which a coating film is formed to heat processing, and the method comprises the steps of heating the substrate to a predetermined high temperature and decreasing the temperature of the substrate to a predetermined low temperature, wherein in the step of decreasing the temperature of the substrate to the low temperature, a first step of decreasing the temperature of the substrate from the predetermined high temperature to a predetermined intermediate temperature and a second step of decreasing the temperature of the substrate from the intermediate temperature to the predetermined low temperature are performed separately.Type: ApplicationFiled: September 10, 2001Publication date: March 14, 2002Applicant: Tokyo Electron LimitedInventor: Shinji Nagashima
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Patent number: 6350316Abstract: An apparatus for forming a coating film, comprising a process section for applying a series of processes for forming a coating film to a substrate, and a common transfer mechanism for transferring a substrate in the process section, in which, the process section comprises a cooling unit for cooling a substrate, a coating unit for applying a coating solution containing a first solvent to the substrate to form a coating film, an aging unit for changing the coating film formed in the coating unit to a gel-state film if the coating film is formed in a sol state, a solvent exchange unit for bringing a second solvent, which differs from the first solvent in composition, into contact with the coating film to replace the first solvent contained in the coating film with the second solvent, a curing process unit for heating and cooling the substrate under an atmosphere low in oxygen concentration, thereby curing the coating film, and a heating unit for heating the coating film formed on the substrate.Type: GrantFiled: October 25, 1999Date of Patent: February 26, 2002Assignee: Tokyo Electron LimitedInventors: Shinichi Hayashi, Shinji Nagashima
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Publication number: 20010029890Abstract: When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.Type: ApplicationFiled: June 22, 2001Publication date: October 18, 2001Applicant: TOKYO ELECTRON LIMITEDInventors: Yuji Matsuyama, Yoji Mizutani, Shinji Nagashima, Akira Yonemizu
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Publication number: 20010017103Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: ApplicationFiled: April 26, 2001Publication date: August 30, 2001Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Patent number: 6261365Abstract: When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.Type: GrantFiled: March 19, 1999Date of Patent: July 17, 2001Assignee: Tokyo Electron LimitedInventors: Yuji Matsuyama, Yoji Mizutani, Shinji Nagashima, Akira Yonemizu