Abstract: An object of the present invention is to prevent a semiconductor substrate from being damaged when the substrate is conveyed by a conveying robot provided in a semiconductor manufacturing apparatus. A diffusion furnace apparatus has a diffusion furnace that processes a semiconductor wafer, a quartz boat that is arranged in the diffusion furnace to store the semiconductor wafer, and a conveying robot that delivers the semiconductor wafer between the quartz boat and a cassette carried in from the outside. Further, the conveying robot includes a column-like sensor support unit provided at a part that is not turned, and a first sensor that detects the presence or absence of the semiconductor wafer held on a plate of the conveying robot and a second sensor that detects the positional displacement of the semiconductor wafer held on the plate are provided at the sensor support unit.

Abstract: An object of the present invention is to prevent a semiconductor substrate from being damaged when the substrate is conveyed by a conveying robot provided in a semiconductor manufacturing apparatus. A diffusion furnace apparatus has a diffusion furnace that processes a semiconductor wafer, a quartz boat that is arranged in the diffusion furnace to store the semiconductor wafer, and a conveying robot that delivers the semiconductor wafer between the quartz boat and a cassette carried in from the outside. Further, the conveying robot includes a column-like sensor support unit provided at a part that is not turned, and a first sensor that detects the presence or absence of the semiconductor wafer held on a plate of the conveying robot and a second sensor that detects the positional displacement of the semiconductor wafer held on the plate are provided at the sensor support unit.

Abstract: A plasma generating apparatus capable of improving the uniformity of a plasma processing and coping with a larger diameter of a substrate is obtained. Microwaves are distributed and emitted from a waveguide through the branching portions of a T branch to four rod antennas. The microwaves are introduced through four dielectric tubes into a vacuum vessel. In the vacuum vessel, a multi-cusp magnetic field and an electron cyclotron resonance region are caused by permanent magnets located around the vessel and, by an interaction between a vibrational electric field of the microwaves and a magnetic field, highly uniform plasma is generated in a region where a substrate or the like is subjected to a plasma processing.

Abstract: There is provided a plasma generating apparatus comprising: a waveguide for guiding a microwave; a vacuum vessel connected to the waveguide, having a means for supplying a gas for discharging electrons and a means for evacuating; and a dielectric member in a tube-like shape or a rod-like shape which is inserted in the vacuum vessel, wherein the dielectric member is provided with a means for emitting the microwave, whereby it is possible to apply the electric power of microwave effectively to plasma of high density exceeding so-called cut-off density and to homogenize the distribution of plasma in the vacuum vessel.

Abstract: In an apparatus for the plasma treatment of semiconductor devices, a cover is provided on the outer periphery of the space between the upper and lower electrodes. By virtue of the provision of the cover on the outer periphery of the inter-electrode space, the processing gas ejected from ejection holes on one surface of the upper electrode diffuses evenly in the inter-electrode space to reach the surface of the semiconductor wafer. Therefore, it is possible to improve the efficiency at which the wafer is processed as well as the evenness with which various portions of the surface of the wafer are treated.